A D V A N C E D S E M I C O N D U C T O R, I N C. REV. C
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 1/1
Specif i cations are subj ect to change wi thout notice.
CHARACTERISTICS TC = 25 °C
SYMBOL NONETEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS
BVCBO IC = 10 mA 65 V
BVCER IC = 10 mA RBE = 10 Ω 65 V
BVEBO IE = 1.0 mA 3.5 V
ICES VCE = 50 V 5.0 mA
hFE VCE = 5.0 V IC = 500 mA 15 120 ---
PG
η
ηη
ηC VCC = 50 V POUT = 35 W f = 1025-1150 MHz
PIN = 3.0 W
10.7
43 11.2
48 dB
%
NPN SILICON RF POWER TRANSISTOR
MSC81035M
DESCRIPTION:
The ASI MSC81035M is a common
base device, medium power Class C
transistor for pulsed
L-Band avionics, DME/TACAN
Applications.
FEATURES:
• Input mat ching
• Emitter site Ballasted.
• PG = 10 dB at 35 W/1150 MHz
• Omnigold™ Metalization System
MAXIMUM RATINGS
IC 3.0 A
VCC 55 V
PDISS 150 W @ TC ≤ 100 °C
TJ -65 °C to +250 °C
TSTG -65 °C to +150 °C
θ
θθ
θJC 1.0 °OC/W
PACKAGE STYLE .250 2L FLG (B)
MINIMUM
inche s / m m
1.050 / 26.67
.120 / 3.05
.245 / 6.22
.552 / 14.02
.790 / 20.07
B
C
D
E
F
G
A
MAXIMUM
.255 / 6.48
.572 / 14.53
.810 / 20.57
.140 / 3.56
inche s / m m
H.003 / 0.08 .007 / 0.18
DIM
K
I
J
.052 / 1.32 .072 / 1.83
.130 / 3.30
.088 x 45°
CHAMFE R
A
B
Ø D
E
F G
H
IK
C
J
.100 X 45°
.095 / 2.41 .105 / 2.67
.285 / 7.24
.210 / 5.33
.120 / 3.05
