DATA SHEET SILICON TRANSISTORS 2SD1006,2SD1007 NPN SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD DESCRIPTION The 2SD1006 and 2SD1007 are designed for audio frequency power amplifier application, especially in Hybrid Integrated Circuits. FEATURES PACKAGE DIMENSIONS e World Standard Miniature Package : SOT89 in millimeters High Collector to Emitter Voltage : Vceg > 120 V (2SD1007) : VcEo > 100 V (28D 1006) 45+0.1 Complement to PNP type 2SB805 and 2SB806 respectively. 16402 yore} ABSOLUTE MAXIMUM RATINGS Maximum Voltages and Currents (Tg = 25 C) 2801006 2SD1007 aT wo Collector to Base Voltage - Vcso 100 120 Vv 3 a Collector to Emitter Voltage VcEO 100 120 =v z eke), ye 3 Emitter to Base Voltage VEBO 6.0 Vv = 17 Collector Current (DC) | 0.7 A 2 (0.42 0:42+0.0 * c 0 |+0.06 0.47 42 0.08 Collector Current (Pulse) le 1.2 A o 1.5 f . we . ag 0% | Maximum Power Dissipation : 0.414883 Total Power Dissipation at 25 C Ambient Temperature* Py 2.0 Ww 1 Emi Maximum Temperatures 2 Collector Junction Temperature Tj 150 c 3, Base SOT-89 Storage Temperature Range Tstg 5 to +150 Cc *PW S10 ms, duty cycle $50 % | **When mounted on ceramic substrate of 16 cm? x 0.7 mm ELECTRICAL CHARACTERISTICS (Ta = 25 C) CHARACTERISTIC SYMBOL MIN. TYP. MAX. UNIT TEST CONDITIONS 100 nA 2SD1006 Vcp=100 V,1E=0 | FF t l Collector Cutoff Curren CBO 100 nA 2SD1007 Vep=120 V, lE=0 Emitter Cutoff Current leEBO 100 nA Vep=5.0 V, Ic=0 DC Current Gain heey. 45 200. VcE=1.0 V, I=5.0mA ae DC Current Gain - hEEQ 90 200 400 VCE=1.0 V, I=100 mA a Collector Saturation Voltage VCE (sat) 03 06 Vv Ig=500 mA, Ig=50MA ee Base Saturation Voltage VBE (sat) 0.9 15 - Vv 1=500 mA, 1p=50 mA ee Base to Emitter Voltage VBE 550 620 650 mV Vce=10V, I=10 mA Gain Bandwidth Product fT 90 MHz VcE=10 V, Ie=-10 mA Output Capacitance Cob - 10 pF Vcp=10V, Ie=0, f=1.0 MHz ***Pulsed: PW <350 us, duty cycle $2 % here Classification | 28D1006 HM ./ OAL HK 2S8D1007 |- HR HO _ HP 90 -- 180 - 135 270 200 400 MARKING 9 hFE Document No. TC1369B (O.D.No. TC5477A) Date Published November 1994 M oe Printed in Japan NEC Corporation 1982NEC 2$D1006,2SD1007 TYPICAL CHARACTERISTICS (T, = 25 C) P7Totol Power DissipationW ICollector CurrentmA hpe-DC Current Gain TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE 0.7 mmx 16 cm? Mounted on Ceramic Substrate 0 50 100 150 200 250 TgAmbient TempertureC COLLECTOR CURRENT vs. : COLLECTOR TO EMITTER VOLTAGE 20 90 16 80 70 yA 12 60 A 50 uA 8.0 40 uA 30 pA 4.0 20 IB=10 2A 0 oO 4.0 8.0 12 16 20 VceCollector to Emitter VoltageV DC CURRENT GAIN vs. COLLECTOR CURRENT VCE= 500 200 100 50 20 10 1 2 5 10 20 50 100200 5001000 2000 ICollector CurrentmA 0.05 0.03 VoeE(sat) Collector Saturation VoltageV ICollector CurrentmA !Collector CurrentmA 05 0.3 0.1 2000 1000 500 200 100 50 20 10 COLLECTOR CURRENT vs. COLLECTOR TO EMITTER VOLTAGE 80 60 uA 50 A 0 0.1 0.2 03 0.4 05 VceCollector to Emitter VoltageV COLLECTOR CURRENT vs. BASE TO EMITTER VOLTAGE VcE=1.0 V Pulsed 02-04 06 O8 10 12 14 16 VpeBase to Emitter Voltage V COLLECTOR SATURATION VOLTAGE vs. COLLECTOR CURRENT Ic=10-Ig Pulsed 5 10 20 50 100 200 500 1000 lCollector CurrentmANEC BASE SATURATION VOLTAGE vs. COLLECTOR CURRENT w o Ic=10-tp Pulsed ~ a o an 2 w VBE(sat)Base Saturation VoltageV oO 10 20 50 100 200 500 1000 = ho on ICollector Current~mA OUTPUT CAPACITANCE vs. REVERSE VOLTAGE IE=0 f=1.0 MHz N ao _ oO an Cob Output CapacitancepF th 1 2 5 10 20 50 100 Veg Collector to Base VoltageV 2SD1006,2SD1007 GAIN BANDWIDTH PRODUCT vs. EMITTER CURRENT VCE=10 V 500 200 100 a Qo nN Lon} f7-Gain Bandwidth Product MHz 10 1 2 5 -10 ~20 *-50 --100 lEmitter CurrentmA REFERENCE Dacument Name Document No. NEC semiconductor device reliability/quality control system. TEI-1202 Quality grade on NEC semiconductor devices. (E1-1209 Semiconductor device mounting technology manual. 1E1-1207 Semiconductor device package manual. 1E1-1213 Guide to quality assurance for semiconductor devices. MEI-1202 Semiconductor selection guide. MF-1134NEC | 2$D1006,2SD1007 [MEMO] No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this document. NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from use of a device described herein or any other liability arising from use of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Corporation or others. The devices listed in this document are not suitable for use in aerospace equipment, submarine cables, nuclear reactor control systems and life support systems. If customers intend to use NEC devices for above applications or they intend to use "Standard" quality grade NEC devices for applications not intended by NEC, please contact our sales people in advance. Application examples recommended by NEC Corporation Standard: Computer, Office equipment, Communication equipment, Test and-Measurement equipment, Machine tools, Industrial robots, Audio and Visual equipment, Other consumer products, etc. Special: Automotive and Transportation equipment, Traffic control systems, Antidisaster systems, Anticrime systems, etc. M4 92.6