PD - 91260E IRLML5103 HEXFET(R) Power MOSFET l l l l l l l Generation V Technology Ultra Low On-Resistance P-Channel MOSFET SOT-23 Footprint Low Profile (<1.1mm) Available in Tape and Reel Fast Switching D VDSS = -30V G RDS(on) = 0.60 S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. A customized leadframe has been incorporated into the standard SOT-23 package to produce a HEXFET Power MOSFET with the industry's smallest footprint. This package, dubbed the Micro3, is ideal for applications where printed circuit board space is at a premium. The low profile (<1.1mm) of the Micro3 allows it to fit easily into extremely thin application environments such as portable electronics and PCMCIA cards. Micro3 Absolute Maximum Ratings Parameter I D @ TA = 25C I D @ TA = 70C IDM PD @TA = 25C VGS dv/dt TJ, TSTG Max. Continuous Drain Current, VGS @ -10V Continuous Drain Current, VGS @ -10V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery dv/dt Junction and Storage Temperature Range Units -0.76 -0.61 -4.8 540 4.3 20 -5.0 -55 to + 150 A mW mW/C V V/ns C Thermal Resistance Parameter RJA Maximum Junction-to-Ambient Typ. Max. Units 230 C/W 04/29/03 IRLML5103 Electrical Characteristics @ TJ = 25C (unless otherwise specified) V(BR)DSS/TJ Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient RDS(ON) Static Drain-to-Source On-Resistance VGS(th) g fs Gate Threshold Voltage Forward Transconductance IDSS Drain-to-Source Leakage Current V(BR)DSS I GSS Qg Qgs Qgd t d(on) tr t d(off) tf Ciss Coss C rss Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Min. -30 -1.0 0.44 Typ. -0.029 3.4 0.52 1.1 10 8.2 23 16 75 37 18 Max. Units Conditions V VGS = 0V, ID = -250A V/C Reference to 25C, ID = -1mA 0.60 VGS = -10V, ID = -0.60A 1.0 VGS = -4.5V, I D = -0.30A V VDS = VGS, I D = -250A S VDS = -10V, ID = -0.30A -1.0 VDS = -24V, VGS = 0V A -25 VDS = -24V, VGS = 0V, TJ = 125C -100 VGS = -20V nA 100 VGS = 20V 5.1 ID = -0.60A 0.78 nC VDS = -24V 1.7 VGS = -10V, See Fig. 6 and 9 VDD = -15V ID = -0.60A ns RG = 6.2 RD = 25, See Fig. 10 VGS = 0V pF VDS = -25V = 1.0MHz, See Fig. 5 Source-Drain Ratings and Characteristics IS I SM VSD t rr Q rr Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse RecoveryCharge Min. Typ. Max. Units -0.54 -4.8 26 20 -1.2 39 30 A V ns nC Conditions MOSFET symbol showing the G integral reverse p-n junction diode. TJ = 25C, IS = -0.60A, VGS = 0V TJ = 25C, IF = -0.60A di/dt = 100A/s Notes: Repetitive rating; pulse width limited by max. junction temperature. ( See fig. 11 ) Pulse width 300s; duty cycle 2%. ISD -0.60A, di/dt 110A/s, VDD V(BR)DSS, Surface mounted on FR-4 board, t 5sec. TJ 150C D S IRLML5103 10 10 VGS - 15V - 10V - 7.0V - 5.5V - 4.5V - 4.0V - 3.5V BOTTOM - 3.0V VGS - 15V - 10V - 7.0V - 5.5V - 4.5V - 4.0V - 3.5V BOTTOM - 3.0V TOP -I D , Drain-to-Source Current (A) -I D , Drain-to-Source Current (A) TOP 1 -3.0V 20s PULSE WIDTH TJ = 25C A 0.1 0.1 1 1 -3.0V 20s PULSE WIDTH TJ = 150C A 0.1 10 0.1 1 -VDS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 2.0 R DS(on) , Drain-to-Source On Resistance (Normalized) -ID , Drain-to-Source Current (A) 10 TJ = 25C TJ = 150C 1 VDS = -10V 20s PULSE WIDTH 0.1 3.0 4.0 5.0 6.0 7.0 -VGS , Gate-to-Source Voltage (V) Fig 3. Typical Transfer Characteristics 10 -VDS , Drain-to-Source Voltage (V) 8.0 A I D = -0.60A 1.5 1.0 0.5 VGS = -10V 0.0 -60 -40 -20 0 20 40 60 80 A 100 120 140 160 TJ , Junction Temperature (C) Fig 4. Normalized On-Resistance Vs. Temperature IRLML5103 140 100 -VGS , Gate-to-Source Voltage (V) 120 C, Capacitance (pF) 20 V GS = 0V, f = 1MHz C iss = Cgs + C gd , Cds SHORTED C rss = C gd Ciss C oss = C ds + C gd Coss 80 60 Crss 40 20 0 A 1 10 I D = -0.60A VDS = -24V VDS = -15V 16 12 8 4 0 0.0 100 -VDS , Drain-to-Source Voltage (V) 1.0 2.0 3.0 4.0 A 5.0 Q G , Total Gate Charge (nC) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage 10 10 OPERATION IN THIS AREA LIMITED BY RDS(on) -I D , Drain Current (A) -ISD , Reverse Drain Current (A) FOR TEST CIRCUIT SEE FIGURE 9 TJ = 150C 1 TJ = 25C VGS = 0V 0.1 0.4 0.6 0.8 1.0 1.2 1.4 -VSD , Source-to-Drain Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage A 1.6 100s 1 1ms TA = 25C TJ = 150C Single Pulse 0.1 1 10ms A 10 -VDS , Drain-to-Source Voltage (V) Fig 8. Maximum Safe Operating Area 100 IRLML5103 VDS QG V GS -10V QGS QGD RD D.U.T. RG - + VG VDD -10V Pulse Width 1 s Duty Factor 0.1 % Charge Fig 9a. Basic Gate Charge Waveform Fig 10a. Switching Time Test Circuit Current Regulator Same Type as D.U.T. VDS 50K 90% .2F 12V .3F D.U.T. +VDS VGS 10% VGS -3mA IG tr td(on) ID t d(off) tf Current Sampling Resistors Fig 9b. Gate Charge Test Circuit Fig 10b. Switching Time Waveforms Thermal Response (Z thJA ) 1000 100 D = 0.50 0.20 0.10 10 0.05 0.02 PDM 0.01 1 0.1 0.00001 t1 SINGLE PULSE (THERMAL RESPONSE) t2 Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJA + TA 0.0001 0.001 0.01 0.1 1 10 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient 100 IRLML5103 Peak Diode Recovery dv/dt Test Circuit + D.U.T Circuit Layout Considerations * Low Stray Inductance * Ground Plane * Low Leakage Inductance Current Transformer + - - + ** RG * dv/dt controlled by RG * I SD controlled by Duty Factor "D" * D.U.T. - Device Under Test VGS* + - * VDD * Reverse Polarity for P-Channel ** Use P-Channel Driver for P-Channel Measurements Driver Gate Drive P.W. Period D= P.W. Period [VGS=10V ] *** D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt Re-Applied Voltage Body Diode [VDD] Forward Drop Inductor Curent Ripple 5% *** VGS = 5.0V for Logic Level and 3V Drive Devices Fig 13. For P-Channel HEXFETS [ISD] IRLML5103 Package Outline SOT-23 Outline Dimensions are shown in millimeters (inches) D -B- 3 E -A- LEAD ASSIGNMENTS 1 - GATE 2 - SOURCE 3 - DRAIN 3 3 DIM H 1 0.20 ( .008 ) 2 M A M e e1 A INCHES MILLIMETERS A MIN .032 MAX .044 MIN 0.82 MAX 1.11 A1 .001 .004 0.02 0.10 B .015 .021 0.38 0.54 C .004 .006 0.10 0.15 D .105 .120 2.67 3.05 e .0750 BASIC 1.90 BASIC e1 .0375 BASIC 0.95 BASIC E .047 .055 1.20 1.40 H .083 .098 2.10 2.50 L .005 .010 0.13 0.25 0 8 0 8 MINIMUM RECOMMENDED FOOTPRINT -CB A1 3X 0.10 (.004) M 0.80 ( .031 ) 3X 0.008 (.003) C AS B S NOTES: 1. DIMENSIONING & TOLERANCING PER ANSI Y14.5M-1982. 2. CONTROLLING DIMENSION : INCH. 3 DIMENSIONS DO NOT INCLUDE MOLD FLASH. L 3X C 3X 0.90 ( .035 ) 3X 2.00 ( .079 ) 0.95 ( .037 ) 2X IRLML5103 Part Marking Information SOT-23 Notes : T his part marking information applies to devices produced before 02/26/2001 WW = (1-26) IF PRECEDED BY LAS T DIGIT OF CALENDAR YEAR EXAMPLE: T HIS IS AN IRLML6302 PART NUMBER DATE CODE PART NUMBER CODE REFERENCE: 1A = 1B = 1C = 1D = 1E = 1F = 1G = 1H = IRLML2402 IRLML2803 IRLML6302 IRLML5103 IRLML6402 IRLML6401 IRLML2502 IRLML5203 YEAR Y 2001 2002 2003 1994 1995 1996 1997 1998 1999 2000 1 2 3 4 5 6 7 8 9 0 WORK WEEK W 01 02 03 04 A B C D 24 25 26 X Y Z WW = (27-52) IF PRECEDED BY A LETT ER DAT E CODE EXAMPLES: YWW = 9503 = 5C YWW = 9532 = EF YEAR Y 2001 2002 2003 1994 1995 1996 1997 1998 1999 2000 A B C D E F G H J K WORK WEEK W 27 28 29 30 A B C D 50 51 52 X Y Z Notes : T his part marking information applies to devices produced after 02/26/2001 W = (1-26) IF PRECE DED BY LAS T DIGIT OF CALENDAR YEAR PART NUMBER Y = YEAR W = WEEK LOT CODE PART NUMBER CODE REFERENCE: A= B= C= D= E= F= G= H= IRLML2402 IRLML2803 IRLML6302 IRLML5103 IRLML6402 IRLML6401 IRLML2502 IRLML5203 YEAR Y 2001 2002 2003 1994 1995 1996 1997 1998 1999 2000 1 2 3 4 5 6 7 8 9 0 WORK WEEK W 01 02 03 04 A B C D 24 25 26 X Y Z W = (27-52) IF PRECEDED BY A LETTER YEAR Y 2001 2002 2003 1994 1995 1996 1997 1998 1999 2000 A B C D E F G H J K WORK WEEK W 27 28 29 30 A B C D 50 51 52 X Y Z IRLML5103 Tape & Reel Information SOT-23 Dimensions are shown in millimeters (inches) 2.05 ( .080 ) 1.95 ( .077 ) 1.6 ( .062 ) 1.5 ( .060 ) 4.1 ( .161 ) 3.9 ( .154 ) TR FEED DIRECTION 1.85 ( .072 ) 1.65 ( .065 ) 3.55 ( .139 ) 3.45 ( .136 ) 4.1 ( .161 ) 3.9 ( .154 ) 1.32 ( .051 ) 1.12 ( .045 ) 8.3 ( .326 ) 7.9 ( .312 ) 0.35 ( .013 ) 0.25 ( .010 ) 1.1 ( .043 ) 0.9 ( .036 ) 178.00 ( 7.008 ) MAX. 9.90 ( .390 ) 8.40 ( .331 ) NOTES: 1. CONTROLLING DIMENSION : MILLIMETER. 2. OUTLINE CONFORMS TO EIA-481 & EIA-541. Data and specifications subject to change without notice. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. 04/03