PD - 91260E
HEXFET® Power MOSFET
VDSS = -30V
RDS(on) = 0.60Ω
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This benefit,
combined with the fast switching speed and ruggedized
device design that HEXFET Power MOSFETs are well
known for, provides the designer with an extremely efficient
and reliable device for use in a wide variety of applications.
A customized leadframe has been incorporated into the
standard SOT-23 package to produce a HEXFET Power
MOSFET with the industry's smallest footprint. This
package, dubbed the Micro3, is ideal for applications
where printed circuit board space is at a premium. The low
profile (<1.1mm) of the Micro3 allows it to fit easily into
extremely thin application environments such as portable
electronics and PCMCIA cards.
IRLML5103
04/29/03
Description
lGeneration V Technology
lUltra Low On-Resistance
lP-Channel MOSFET
lSOT-23 Footprint
lLow Profile (<1.1mm)
lAvailable in Tape and Reel
lFast Switching
S
D
G
Micro3
Parameter Max. Units
ID @ TA = 25°C Continuous Drain Current, VGS @ -10V -0.76
ID @ TA = 70°C Continuous Drain Current, VGS @ -10V -0.61 A
IDM Pulsed Drain Current -4.8
PD
@TA = 25°C Power Dissipation 540 mW
Linear Derating Factor 4.3 mW/°C
VGS Gate-to-Source Voltage ± 20 V
dv/dt Peak Diode Recovery dv/dt -5.0 V/ns
TJ, TSTG Junction and Storage Temperature Range -55 to + 150 °C
Absolute Maximum Ratings
Parameter Typ. Max. Units
RθJA Maximum Junction-to-Ambient 230
Thermal Resistance
°C/W
IRLML5103
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage -30 V VGS = 0V, ID = -250µA
∆V(BR)DSS/∆TJBreakdown Voltage Temp. Coefficient -0.029 V/°C Reference to 25°C, ID = -1mA
0.60 VGS = -10V, ID = -0.60A
1.0 VGS = -4.5V, ID = -0.30A
VGS(th) Gate Threshold Voltage -1.0 V VDS = VGS, ID = -250µA
gfs Forward Transconductance 0.44 S VDS = -10V, ID = -0.30A
-1.0 VDS = -24V, VGS = 0V
-25 VDS = -24V, VGS = 0V, TJ = 125°C
Gate-to-Source Forward Leakage -100 VGS = -20V
Gate-to-Source Reverse Leakage 100 VGS = 20V
QgTotal Gate Charge 3.4 5.1 ID = -0.60A
Qgs Gate-to-Source Charge 0.52 0.78 nC VDS = -24V
Qgd Gate-to-Drain ("Miller") Charge 1.1 1.7 VGS = -10V, See Fig. 6 and 9
td(on) Turn-On Delay Time 10 VDD = -15V
trRise Time 8.2 ID = -0.60A
td(off) Turn-Off Delay Time 23 RG = 6.2Ω
tfFall Time 16 RD = 25Ω, See Fig. 10
Ciss Input Capacitance 75 VGS = 0V
Coss Output Capacitance 37 pF VDS = -25V
Crss Reverse Transfer Capacitance 18 = 1.0MHz, See Fig. 5
Ω
µA
nA
ns
IGSS
IDSS Drain-to-Source Leakage Current
RDS(ON) Static Drain-to-Source On-Resistance
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
ISContinuous Source Current MOSFET symbol
(Body Diode) showing the
ISM Pulsed Source Current integral reverse
(Body Diode) p-n junction diode.
VSD Diode Forward Voltage -1.2 V TJ = 25°C, IS = -0.60A, VGS = 0V
trr Reverse Recovery Time 26 39 ns TJ = 25°C, IF = -0.60A
Qrr Reverse RecoveryCharge 20 30 nC di/dt = 100A/µs
Source-Drain Ratings and Characteristics
A
S
D
G
-0.54
-4.8
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
ISD ≤ -0.60A, di/dt ≤ 110A/µs, VDD ≤ V
(BR)DSS,
TJ ≤ 150°C
Notes:
Pulse width ≤ 300µs; duty cycle ≤ 2%.
Surface mounted on FR-4 board, t ≤ 5sec.
IRLML5103
Fig 1. Typical Output Characteristics
Fig 3. Typical Transfer Characteristics
Fig 2. Typical Output Characteristics
Fig 4. Normalized On-Resistance
Vs. Temperature
0.1
1
10
0.1 1 10
D
DS
A
-I , Drain-to-Source Current (A)
-V , Drain-to-Source Voltage (V)
-3.0V
VGS
TOP - 15V
- 10V
- 7.0V
- 5.5V
- 4.5V
- 4.0V
- 3.5V
BOTTOM - 3.0V
20µs PULSE WIDTH
T = 150°C
J
0.1
1
10
3.0 4.0 5.0 6.0 7.0 8.0
T = 25°C
T = 150°C
J
J
GS
D
A
-I , Drain-to-S ource Current (A)
-V , Gate-to-Source Voltage (V)
V = -10V
20µs PULSE WIDTH
DS
0.0
0.5
1.0
1.5
2.0
-60 -40 -20 0 20 40 60 80 100 120 140 160
J
T , Junction Temperature (°C)
R , Drain-to-Source On Resistance
DS(on)
(Normalized)
A
V = -10V
GS
I = -0.60A
D
0.1
1
10
0.1 1 10
D
DS
20µs PULSE WIDTH
T = 25°C
A
-I , Drain-to-Source Current (A)
-V , Drain-to-Source Voltage (V)
J
-3.0V
VGS
TOP - 15V
- 10V
- 7.0V
- 5.5V
- 4.5V
- 4.0V
- 3.5V
BOTTOM - 3.0V
IRLML5103
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 7. Typical Source-Drain Diode
Forward Voltage
Fig 8. Maximum Safe Operating Area
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
0
20
40
60
80
100
120
140
1 10 100
C , Capac itance (pF)
A
DS
-V , Drain-to-Sou rce Vo ltag e (V)
V = 0V, f = 1MHz
C = C + C , C SHORTED
C = C
C = C + C
GS
iss gs gd ds
rss gd
os s ds gd
C
iss
C
oss
C
rss
0
4
8
12
16
20
0.0 1.0 2.0 3.0 4.0 5.0
G
GS
A
-V , Gate-to-Source Voltage (V)
Q , Total Gate Cha rge (nC)
V = -24V
V = -15V
DS
DS
FOR TEST CIRCU IT
SEE FIGURE 9
I = -0.60A
D
0.1
1
10
0.4 0.6 0.8 1.0 1.2 1.4 1.6
T = 25°C
T = 150°C
J
J
V = 0V
GS
SD
SD
A
-I , Reverse D rain Cu rrent (A )
-V , Source-to-Drain Voltag e (V)
0.1
1
10
1 10 100
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
T = 25°C
T = 150°C
Single P ulse
A
-I , Drain Current (A)
-V , Drain-to-Sou rce Vo ltag e (V)
DS
D
A
J
100µs
1ms
10ms
IRLML5103
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
VDS
90%
10%
VGS t
d(on)
t
r
t
d(off)
t
f
Fig 10a. Switching Time Test Circuit
Fig 10b. Switching Time Waveforms
VDS
-10V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
RD
VGS
VDD
RG
D.U.T.
Fig 9a. Basic Gate Charge Waveform
Q
G
Q
GS
Q
GD
V
G
Charge
Fig 9b. Gate Charge Test Circuit
-10V
D.U.T. V
DS
I
D
I
G
-3mA
V
GS
.3µF
50KΩ
.2µF
12V
Current Regulator
Same Type as D.U.T.
Current Sampling Resistors
+
-
+
-
0.1
1
10
100
1000
0.00001 0.0001 0.001 0.01 0.1 1 10 100
Notes:
1. Du ty factor D = t / t
2. Peak T =P x Z + T
1 2
JDM thJA A
P
t
t
DM
1
2
t , Rectangular Pulse Dur ati on ( sec)
Thermal Response (Z )
1
thJA
0.01
0.02
0.05
0.10
0.20
D = 0.50
SINGLE PULSE
(THERM AL RESPONSE)
IRLML5103
Peak Diode Recovery dv/dt Test Circuit
P.W. Period
di/dt
Diode Recovery
dv/dt
Ripple ≤5%
Body Diode Forward Drop
Re-Applied
Voltage
Reverse
Recovery
Current Body Diode Forward
Current
V
GS
=10V
V
DD
I
SD
Driver Gate Drive
D.U.T. I
SD
Waveform
D.U.T. V
DS
Waveform
Inductor Curent
D = P.W.
Period
+
-
+
+
+
-
-
-
RG
VDD
• dv/dt controlled by RG
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
D.U.T Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
* Reverse Polarity for P-Channel
** Use P-Channel Driver for P-Channel Measurements
*
VGS*
**
[ ]
[ ]
*** VGS = 5.0V for Logic Level and 3V Drive Devices
[ ] ***
Fig 13. For P-Channel HEXFETS
IRLML5103
SOT-23 Outline
Dimensions are shown in millimeters (inches)
Package Outline
LEAD ASSIGNMEN T S
1 - GATE
2 - SOURCE
3 - DRAIN
L
3X 3X
C
θ
A1
- C -
B 3X
A
e
e1
0.008 (.003)
3
12
E
- A -
- B -
D
H
0.20 ( .008 ) M A M
DIM INCHES MILLIMETERS
MIN MAX MIN MAX
A .032 .044 0 .82 1.11
A1 .001 .004 0.02 0.10
B .015 .021 0 .38 0.54
C .004 .0 06 0.10 0.15
D .105 .1 20 2.67 3.05
e .0750 BASIC 1.90 BASIC
e1 .0375 BASIC 0.95 BASIC
E .047 .055 1 .20 1.40
H .083 .0 98 2.10 2.50
L .005 .010 0.1 3 0.25
θ
0° 8° 0° 8°
0.10 (.004) M C A S B S
MINIMUM RECOMMENDED FOOTPRINT
0.80 ( .031 )
3X
2.00
( .079 )
0.95 ( .037 )
2X
0.90
( .0 3 5 )
3X
3
3
3
NOTES:
1. DIMENSIONING & TOLERANCING PER ANSI Y1 4.5M-1982.
2 . CONTROLLIN G DIMENSION : INCH.
DI MENSIONS DO NOT INCLUDE MOLD FLASH.
IRLML5103
Part Marking Information
61996
26
24
25
30
28
WE E K
27
WOR K
29
2002
2003
1995
1994
2001
YEAR
B
D
E
C
Y
A
2000
1997
1999
1998
0
8
9
7
D
C
W
B
A
X
Z
Y
04
WE E K
WOR K
02
01
03
2002
2003
1995
1994
YEAR
2001
2
4
5
3
Y
1
W
D
C
B
A
EXAMPLE: THIS IS AN IRLML6302
DAT E CODE E XAMPLE S:
YWW = 9532 = EF
YWW = 9503 = 5C
WW = (1-26) IF PRECEDED B Y LAS T DIGIT OF CALENDAR YEAR
Notes : This part markin
g
information applies to devices produced before 02/26/2001
F1996
52
51
502000
1997
1999
1998
K
H
J
G
X
Z
Y
PART NUMBER
PART NUMBER CODE REFERENCE:
WW = (27-52) IF PRECEDED BY A LE TT ER
DAT E
1C = IRLML6302
1D = IRLML5103
1F = IRLML6401
1G = IRLML2502
1H = IRLML5203
1E = IRLML6402
1A = IRLML2402
1B = IRLML2803
CODE
SOT-23
29
30
50
WYEAR
A2001 A
B2002 B
C2003 C
D1994 D
X
J
1995
1996
1997
1998
1999
2000
E
F
G
H
K
Y
1995
1996
1997
1998
2000
9
8
7
6
5
PART NUMBER
Y = YEAR
W = WEEK
WORK
WEEK
WORK
A = IRL ML2402
B = IRLML2803
C = IRLML 6302
D = IRLML 5103
PART NUMBER CODE REFERENCE: 25 Y
51 Y
26 Z
52 Z
G = IRL ML2502
F = IRLML6401
E = IRLML6402
H = IRLML5203
LOT
CODE
Notes : This part marking information applies to devices produced after 02/26/2001
W = (1-26) IF PRECEDED BY LAST DIGIT OF CALENDAR YEAR
01
02
03
04
24
WYEAR Y
A2001 1
B2002 2
C2003 3
D1994 4
X
1999
0
W = (27-52) IF PRECEDED BY A LETTER
WEEK
27
28
IRLML5103
Tape & Reel Information
SOT-23
Dimensions are shown in millimeters (inches)
2.05 ( .080 )
1.95 ( .077 )
TR
FEED DI RECTI ON
4.1 ( .1 61 )
3.9 ( .1 54 )
1.6 ( .0 62 )
1.5 ( .0 60 ) 1.85 ( .072 )
1.65 ( .065 )
3.55 ( .139 )
3.45 ( .136 )
1.1 ( .043 )
0.9 ( .036 )
4.1 ( .161 )
3.9 ( .154 ) 0.35 ( .013 )
0.25 ( .010 )
8.3 ( .3 26 )
7.9 ( .3 12 )
1.32 ( .051 )
1.12 ( .045 )
9.90 ( .390 )
8.40 ( .331 )
178.00
( 7.008 )
MAX.
NOTES:
1. CONTROLLING DIMENSION : MI LLI METER.
2. OUTLINE CONFORMS TO EIA-481 & EIA-541.
Data and specifications subject to change without notice.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information. 04/03
