DMN601VKQ
Document number: DS38576 Rev. 1 - 2
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www.diodes.com
January 2016
© Diodes Incorporated
DMN601VKQ
DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
Features
Dual N-Channel MOSFET
Low On-Resistance
Low Gate Threshold Voltage
Low Input Capacitance
Fast Switching Speed
Low Input/Output Leakage
Ultra-Small Surface Mount Package
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
PPAP Capable (Note 4)
Mechanical Data
Case: SOT563
Case Material: Molded Plastic, “Green” Molding Compound;
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Connections: See Diagram
Terminals: Finish - Matte Tin Annealed over Copper
Leadframe. Solderable per MIL-STD-202, Method 208
Weight: 0.006 grams (Approximate)
Ordering Information (Note 5)
Part Number
Case
DMN601VKQ-7
SOT563
Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. Automotive products are AEC-Q101 qualified and are PPAP capable. Refer to http://www.diodes.com/product_compliance_definitions.html.
5. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
Date Code Key
Month
2005
…
2015
2016
2017
2018
2019
2020
2021
2022
2023
2024
Code
S
…
C
D
E
F
G
H
I
J
K
L
Month
Jan
Feb
Mar
Apr
May
Jun
Jul
Aug
Sep
Oct
Nov
Dec
Code
1
2
3
4
5
6
7
8
9
O
N
D
SOT563
TOP VIEW
Internal Schematic
TOP VIEW
ESD Protected up to 2kV
S
1
D
1
D
2
S
2
G
1
G
2
K7K = Marking Code
YM = Date Code Marking
Y = Year (ex: D = 2016)
M = Month (ex: 9 = September)
K7K YM
S1
D2G1
D1
S2G2
e3
SOT563
DMN601VKQ
Document number: DS38576 Rev. 1 - 2
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January 2016
© Diodes Incorporated
DMN601VKQ
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Value
Unit
Drain-Source Voltage
VDSS
60
V
Gate-Source Voltage
VGSS
±20
V
Drain Current (Note 6)
Continuous
Pulsed (Note 7)
ID
305
800
mA
Thermal Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Value
Unit
Total Power Dissipation (Note 6)
PD
250
mW
Thermal Resistance, Junction to Ambient
RJA
500
°C/W
Operating and Storage Temperature Range
TJ, TSTG
-65 to +150
°C
Electrical Characteristics (@TA = +25°C unless otherwise specified.)
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
OFF CHARACTERISTICS (Note 8)
Drain-Source Breakdown Voltage
BVDSS
60
V
VGS = 0V, ID = 10µA
Zero Gate Voltage Drain Current
IDSS
250
nA
VDS = 50V, VGS = 0V
Gate-Source Leakage
IGSS
500
nA
VGS = 10V, VDS = 0V
100
VGS = 5V, VDS = 0V
ON CHARACTERISTICS (Note 8)
Gate Threshold Voltage
VGS(th)
1.0
1.6
2.5
V
VDS = VGS, ID = 250µA
Static Drain-Source On-Resistance
RDS(ON)

2.0
3.0
Ω
VGS = 10V, ID = 0.5A
VGS = 4.5V, ID = 200mA
Forward Transfer Admittance
|Yfs|
284
ms
VDS =10V, ID = 0.2A
Diode Forward Voltage (Note 8)
VSD
0.5
1.4
V
VGS = 0V, IS = 115mA
DYNAMIC CHARACTERISTICS
Input Capacitance
Ciss
50
pF
VDS = 25V, VGS = 0V
f = 1.0MHz
Output Capacitance
Coss
25
pF
Reverse Transfer Capacitance
Crss
5.0
pF
Notes: 6. Device mounted on FR-4 PCB.
7. Pulse width 10s, Duty Cycle 1%.
8. Short duration pulse test used to minimize self-heating effect.
DMN601VKQ
Document number: DS38576 Rev. 1 - 2
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January 2016
© Diodes Incorporated
DMN601VKQ
0
0.2
0.4
0.6
0.8
1.0
0 1 2 3 4 5
V , DRAIN-SOURCE VOLTAGE (V)
Fig. 1 Typical Output Characteristics
DS
I , DRAIN CURRENT (A)
D
3V
4V
6V
8V
V = 10V
8V
6V
5V
4V
3V
GS
5V
V , GATE-SOURCE VOLTAGE (V)
Fig. 2 Typical Transfer Characteristics
GS
T , CHANNEL TEMPERATURE (
癈
)
Fig. 3 Gate Threshold Voltage
vs. Channel Temperature
CH
0
0.5
1
1.5
2
-50 -25 025 50 75 100 125 150
V = 10V
I = 1mA
Pulsed
DS
D
0.1
I DRAIN CURRENT (A)
Fig. 4 Static Drain-Source On-Resistance
vs. Drain Current
D,
1
10
R , STATIC DRAIN-SOURCE
ON-RESISTANCE ( )
DS(ON)
1
I , DRAIN CURRENT (A)
Fig. 5 Static Drain-Source On-Resistance
vs. Drain Current
D
10
R , STATIC DRAIN-SOURCE
ON-RESISTANCE ( )
DS(ON)
0
V GATE SOURCE VOLTAGE (V)
Fig. 6 Static Drain-Source On-Resistance
vs. Gate-Source Voltage
GS,
R , STATIC DRAIN-SOURCE
ON-RESISTANCE ( )
DS(ON)
(oC)
DMN601VKQ
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January 2016
© Diodes Incorporated
DMN601VKQ
0
T , CHANNEL TEMPERATURE ( C)
Fig. 7
CH °
Static Drain-Source On-State Resistance
vs. Channel Temperature
R , STATIC DRAIN-SOURCE
ON-STATE RESISTANCE ( )
DS(ON)
I , REVERSE DRAIN CURRENT (A)
DR
V = 0V
Pulsed
GS
T = -55 C
A
°
T = 150 C
A
°T = 125 C
A
°
T = 85 C
A
°
T = 25 C
A
°
T = 0 C
A
°
T = -25 C
A
°
1
I , REVERSE DRAIN CURRENT (A)
DR
V = 0V
GS
V = 10V
GS
T = 25
癈
Pulsed
A
I , DRAIN CURRENT (A)
D
Fig.10 Forward Transfer Admittance
vs. Drain Current
|Y |, FORWARD TRANSFER ADMITTANCE (S)
fs
V = 10V
Pulsed
GS
T = 25 C
A°
T = -55 C
A°
T = 150 C
A°
T = 85 C
A°
1
oC
(s)
DMN601VKQ
Document number: DS38576 Rev. 1 - 2
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© Diodes Incorporated
DMN601VKQ
Package Outline Dimensions
Please see AP02001 at http://www.diodes.com/_files/datasheets/ap02001.pdf for the latest version.
SOT563
A
M
L
BC
H
K
GD
SOT563
Dim
Min
Max
Typ
A
0.15
0.30
0.20
B
1.10
1.25
1.20
C
1.55
1.70
1.60
D
-
-
0.50
G
0.90
1.10
1.00
H
1.50
1.70
1.60
K
0.55
0.60
0.60
L
0.10
0.30
0.20
M
0.10
0.18
0.11
All Dimensions in mm
Suggested Pad Layout
Please see AP02001 at http://www.diodes.com/_files/datasheets/ap02001.pdf for the latest version.
SOT563
Dimensions
Value (in mm)
Z
2.2
G
1.2
X
0.375
Y
0.5
C1
1.7
C2
0.5
X
Z
Y
C1
C2
C2
G
DMN601VKQ
Document number: DS38576 Rev. 1 - 2
6 of 6
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January 2016
© Diodes Incorporated
DMN601VKQ
IMPORTANT NOTICE
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INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
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without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
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website, harmless against all damages.
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Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and
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This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the
final and determinative format released by Diodes Incorporated.
LIFE SUPPORT
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for
use provided in the labeling can be reasonably expected to result in significant injury to the user.
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failure of the life support device or to affect its safety or effectiveness.
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representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
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