VS-50WQ10FNPbF www.vishay.com Vishay Semiconductors Schottky Rectifier, 5.5 A FEATURES Base cathode 4, 2 * Popular D-PAK outline * Small foot print, surface mountable * Low forward voltage drop * High frequency operation 1 Anode D-PAK (TO-252AA) * Guard ring for enhanced ruggedness and long term reliability 3 Anode * Meets MSL level 1, per J-STD-020, LF maximum peak of 260 C * Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 PRODUCT SUMMARY Package D-PAK (TO-252AA) IF(AV) 5.5 A VR 100 V VF at IF See Electrical table IRM 4 mA at 125 C DESCRIPTION TJ max. 150 C Diode variation Single die EAS 6 mJ The VS-50WQ10FNPbF surface mount Schottky rectifier has been designed for applications requiring low forward drop and small foot prints on PC board. Typical applications are in disk drives, switching power supplies, converters, freewheeling diodes, battery charging, and reverse battery protection. MAJOR RATINGS AND CHARACTERISTICS SYMBOL VALUES UNITS Rectangular waveform 5.5 A 100 V IFSM tp = 5 s sine 330 A VF 5 Apk, TJ = 125 C 0.63 V TJ Range - 40 to 150 C IF(AV) CHARACTERISTICS VRRM VOLTAGE RATINGS PARAMETER SYMBOL Maximum DC reverse voltage VS-50WQ10FNPbF UNITS 100 V VR Maximum working peak reverse voltage VRWM ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Maximum average forward current See fig. 5 IF(AV) Maximum peak one cycle non-repetitive surge current See fig. 7 IFSM Non-repetitive avalanche energy EAS TJ = 25 C, IAS = 0.5 A, L = 40 mH 6.0 mJ IAR Current decaying linearly to zero in 1 s Frequency limited by TJ maximum VA = 1.5 x VR typical 0.5 A Repetitive avalanche current Revision: 29-May-13 50 % duty cycle at TC = 135 C, rectangular waveform 5.5 5 s sine or 3 s rect. pulse 330 10 ms sine or 6 ms rect. pulse Following any rated load condition and with rated VRRM applied A 110 Document Number: 94235 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-50WQ10FNPbF www.vishay.com Vishay Semiconductors ELECTRICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS 5A Maximum forward voltage drop See fig. 1 VFM (1) TJ = 25 C 10 A 5A TJ = 125 C 10 A Maximum reverse leakage current See fig. 2 IRM (1) Threshold voltage VF(TO) TJ = 25 C VR = Rated VR TJ = 125 C TJ =TJ maximum VALUES UNITS 0.77 0.91 0.63 V 0.74 1 4 mA 0.47 V Forward slope resistance rt 21.46 m Typical junction capacitance CT VR = 5 VDC (test signal range 100 kHz to 1 MHz), 25 C 183 pF Typical series inductance LS Measured lead to lead 5 mm from package body 5.0 nH VALUES UNITS - 40 to 150 C 3.0 C/W 0.3 g 0.01 oz. Note (1) Pulse width < 300 s, duty cycle < 2 % THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL Maximum junction and storage temperature range TJ (1), TStg Maximum thermal resistance, junction to case RthJC TEST CONDITIONS DC operation See fig. 4 Approximate weight Marking device Case style D-PAK (similar to TO-252AA) 50WQ10FN Note (1) dP tot 1 ------------- < -------------- thermal runaway condition for a diode on its own heatsink dT J R thJA Revision: 29-May-13 Document Number: 94235 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-50WQ10FNPbF www.vishay.com Vishay Semiconductors 100 IR - Reverse Current (mA) IF - Instantaneous Forward Current (A) 1000 100 TJ = 150 C TJ = 125 C TJ = 25 C 10 10 TJ = 150 C 1 TJ = 125 C 0.1 TJ = 100 C TJ = 75 C 0.01 TJ = 50 C TJ = 25 C 0.001 0.0001 1 0 0.5 1.0 1.5 2.0 2.5 3.0 0 3.5 10 20 30 40 50 60 70 80 90 100 VFM - Forward Voltage Drop (V) VR - Reverse Voltage (V) Fig. 1 - Maximum Forward Voltage Drop Characteristics Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage CT - Junction Capacitance (pF) 1000 TJ = 25 C 100 10 0 20 40 60 80 100 VR - Reverse Voltage (V) ZthJC - Thermal Impedance (C/W) Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage 10 1 PDM t1 Single pulse (thermal resistance) 0.01 0.00001 0.0001 t2 D = 0.75 D = 0.50 D = 0.33 D = 0.25 D = 0.20 0.1 0.001 Notes: 1. Duty factor D = t1/t2 2. Peak TJ = PDM x ZthJC + TC 0.01 0.1 1 t1 - Rectangular Pulse Duration (s) Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics Revision: 29-May-13 Document Number: 94235 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-50WQ10FNPbF Vishay Semiconductors 5.5 150 D = 0.20 D = 0.25 D = 0.33 D = 0.50 D = 0.75 5.0 145 Average Power Loss (W) Allowable Case Temperature (C) www.vishay.com DC 140 135 Square wave (D = 0.50) 80 % rated VR applied 130 125 See note (1) 4.5 4.0 RMS limit 3.5 3.0 2.5 2.0 1.5 DC 1.0 0.5 0 120 0 1 2 3 4 5 6 7 0 8 1 2 3 4 5 6 7 8 IF(AV) - Average Forward Current (A) Fig. 5 - Maximum Allowable Case Temperature vs. Average Forward Current Fig. 6 - Forward Power Loss Characteristics IFSM - Non-Repetitive Surge Current (A) IF(AV) - Average Forward Current (A) 1000 At any rated load condition and with rated VRRM applied following surge 100 10 100 1000 10 000 tp - Square Wave Pulse Duration (s) Fig. 7 - Maximum Non-Repetitive Surge Current Note (1) Formula used: T = T - (Pd + Pd C J REV) x RthJC; Pd = Forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 6); PdREV = Inverse power loss = VR1 x IR (1 - D); IR at VR1 = 80 % rated VR Revision: 29-May-13 Document Number: 94235 4 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-50WQ10FNPbF www.vishay.com Vishay Semiconductors ORDERING INFORMATION TABLE Device code VS- 50 W Q 10 FN 1 2 3 4 5 6 1 - Vishay Semiconductors product 2 - Current rating (5.5 A) 3 - Package identifier: TRL PbF 7 8 W = D-PAK 4 - Schottky "Q" series 5 - Voltage rating (10 = 100 V) 6 - FN = TO-252AA (D-PAK) 7 - None = Tube (50 pieces) TR = Tape and reel TRL = Tape and reel (left oriented) TRR = Tape and reel (right oriented) 8 - PbF = Lead (Pb)-free LINKS TO RELATED DOCUMENTS Dimensions www.vishay.com/doc?95016 Part marking information www.vishay.com/doc?95059 Packaging information www.vishay.com/doc?95033 SPICE model www.vishay.com/doc?95549 Revision: 29-May-13 Document Number: 94235 5 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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