Datasheet PleasereadtheImportantNoticeandWarningsattheendofthisdocument V2.1
www.infineon.com 2018-01-11
IKB30N65EH5
Highspeedswitchingseries5thgeneration
TRENCHSTOPTM5highspeedswitchingIGBTcopackedwithfullrated
currentRAPID1antiparalleldiode
FeaturesandBenefits:
HighspeedH5technologyoffering
•Best-in-Classefficiencyinhardswitchingandresonant
topologies
•650Vbreakdownvoltage
•LowQG
•IGBTcopackedwithfullratedcurrentRAPID1fastantiparallel
diode
•Maximumjunctiontemperature175°C
•Pb-freeleadplating;RoHScompliant
•CompleteproductspectrumandPSpiceModels:
http://www.infineon.com/igbt/
PotentialApplications:
•EnergyGeneration
-SolarStringInverter
-SolarMicroInverter
•IndustrialPowerSupplies
-IndustrialSMPS
-IndustrialUPS
•MetalTreatment
-Welding
•EnergyDistribution
-EnergyStorage
•Infrastructure–Charge
-Charger
ProductValidation:
Qualifiedforindustrialapplicationsaccordingtotherelevanttests
ofJEDEC47/20/22
G
C
E
G
E
C
KeyPerformanceandPackageParameters
Type VCE ICVCEsat,Tvj=25°C Tvjmax Marking Package
IKB30N65EH5 650V 30A 1.65V 175°C K30EEH5 PG-TO263-3
Datasheet 2 V2.1
2018-01-11
IKB30N65EH5
Highspeedswitchingseries5thgeneration
TableofContents
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Thermal Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Electrical Characteristics Diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Package Drawing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13
Testing Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .15
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .16
Datasheet 3 V2.1
2018-01-11
IKB30N65EH5
Highspeedswitchingseries5thgeneration
MaximumRatings
Foroptimumlifetimeandreliability,Infineonrecommendsoperatingconditionsthatdonotexceed80%ofthemaximumratingsstatedinthisdatasheet.
Parameter Symbol Value Unit
Collector-emittervoltage,Tvj≥25°C VCE 650 V
DCcollectorcurrent,limitedbyTvjmax
Tc=25°C
Tc=100°C
IC55.0
35.0
A
Pulsedcollectorcurrent,tplimitedbyTvjmax ICpuls 90.0 A
Turn off safe operating area
VCE≤650V,Tvj≤175°C,tp=1µs - 90.0 A
Diodeforwardcurrent,limitedbyTvjmax
Tc=25°Cvaluelimitedbybondwire
Tc=100°C
IF40.0
39.5
A
Diodepulsedcurrent,tplimitedbyTvjmax IFpuls 90.0 A
Gate-emitter voltage
TransientGate-emittervoltage(tp≤10µs,D<0.010) VGE ±20
±30 V
PowerdissipationTc=25°C
PowerdissipationTc=100°C Ptot 188.0
94.0 W
Operating junction temperature Tvj -40...+175 °C
Storage temperature Tstg -55...+150 °C
Soldering temperature,
reflow soldering (MSL1 according to JEDEC J-STA-020) 260 °C
ThermalResistance
Value
min. typ. max.
Parameter Symbol Conditions Unit
RthCharacteristics
IGBT thermal resistance,
junction - case Rth(j-c) - - 0.80 K/W
Diode thermal resistance,
junction - case Rth(j-c) - - 1.00 K/W
Thermal resistance, min. footprint
junction - ambient Rth(j-a) - - 65 K/W
Thermal resistance, 6cm² Cu on
PCB
junction - ambient
Rth(j-a) - - 40 K/W
Datasheet 4 V2.1
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IKB30N65EH5
Highspeedswitchingseries5thgeneration
ElectricalCharacteristic,atTvj=25°C,unlessotherwisespecified
Value
min. typ. max.
Parameter Symbol Conditions Unit
StaticCharacteristic
Collector-emitter breakdown voltage V(BR)CES VGE=0V,IC=0.20mA 650 - - V
Collector-emitter saturation voltage VCEsat
VGE=15.0V,IC=30.0A
Tvj=25°C
Tvj=125°C
Tvj=175°C
-
-
-
1.65
1.85
1.95
2.10
-
-
V
Diode forward voltage VF
VGE=0V,IF=30.0A
Tvj=25°C
Tvj=125°C
Tvj=175°C
-
-
-
1.45
1.42
1.39
1.70
-
-
V
Gate-emitter threshold voltage VGE(th) IC=0.30mA,VCE=VGE 3.2 4.0 4.8 V
Zero gate voltage collector current ICES
VCE=650V,VGE=0V
Tvj=25°C
Tvj=175°C
-
-
-
1400
50
-
µA
Gate-emitter leakage current IGES VCE=0V,VGE=20V - - 100 nA
Transconductance gfs VCE=20V,IC=30.0A - 39.5 - S
ElectricalCharacteristic,atTvj=25°C,unlessotherwisespecified
Value
min. typ. max.
Parameter Symbol Conditions Unit
DynamicCharacteristic
Input capacitance Cies - 1800 -
Output capacitance Coes - 55 -
Reverse transfer capacitance Cres - 7 -
VCE=25V,VGE=0V,f=1MHz pF
Gate charge QGVCC=520V,IC=30.0A,
VGE=15V - 70.0 - nC
Internal emitter inductance
measured 5mm (0.197 in.) from
case
LE- 7.0 - nH
SwitchingCharacteristic,InductiveLoad
Value
min. typ. max.
Parameter Symbol Conditions Unit
IGBTCharacteristic,atTvj=25°C
Turn-on delay time td(on) - 24 - ns
Rise time tr- 28 - ns
Turn-off delay time td(off) - 159 - ns
Fall time tf- 25 - ns
Turn-on energy Eon - 0.87 - mJ
Turn-off energy Eoff - 0.30 - mJ
Total switching energy Ets - 1.17 - mJ
Tvj=25°C,
VCC=400V,IC=30.0A,
VGE=0.0/15.0V,
RG(on)=22.0Ω,RG(off)=22.0Ω,
Lσ=30nH,Cσ=30pF
Lσ,CσfromFig.E
Energy losses include “tail” and
diode reverse recovery.
Datasheet 5 V2.1
2018-01-11
IKB30N65EH5
Highspeedswitchingseries5thgeneration
Turn-on delay time td(on) - 20 - ns
Rise time tr- 16 - ns
Turn-off delay time td(off) - 160 - ns
Fall time tf- 27 - ns
Turn-on energy Eon - 0.35 - mJ
Turn-off energy Eoff - 0.09 - mJ
Total switching energy Ets - 0.44 - mJ
Tvj=25°C,
VCC=400V,IC=15.0A,
VGE=0.0/15.0V,
RG(on)=22.0Ω,RG(off)=22.0Ω,
Lσ=30nH,Cσ=30pF
Lσ,CσfromFig.E
Energy losses include “tail” and
diode reverse recovery.
DiodeCharacteristic,atTvj=25°C
Diode reverse recovery time trr - 75 - ns
Diode reverse recovery charge Qrr - 0.70 - µC
Diode peak reverse recovery current Irrm - 12.0 - A
Diode peak rate of fall of reverse
recoverycurrentduringtbdirr/dt - -600 - A/µs
Tvj=25°C,
VR=400V,
IF=30.0A,
diF/dt=850A/µs
Diode reverse recovery time trr - 57 - ns
Diode reverse recovery charge Qrr - 0.50 - µC
Diode peak reverse recovery current Irrm - 14.0 - A
Diode peak rate of fall of reverse
recoverycurrentduringtbdirr/dt - -570 - A/µs
Tvj=25°C,
VR=400V,
IF=15.0A,
diF/dt=900A/µs
SwitchingCharacteristic,InductiveLoad
Value
min. typ. max.
Parameter Symbol Conditions Unit
IGBTCharacteristic,atTvj=150°C
Turn-on delay time td(on) - 23 - ns
Rise time tr- 29 - ns
Turn-off delay time td(off) - 180 - ns
Fall time tf- 20 - ns
Turn-on energy Eon - 1.16 - mJ
Turn-off energy Eoff - 0.37 - mJ
Total switching energy Ets - 1.53 - mJ
Tvj=150°C,
VCC=400V,IC=30.0A,
VGE=0.0/15.0V,
RG(on)=22.0Ω,RG(off)=22.0Ω,
Lσ=30nH,Cσ=30pF
Lσ,CσfromFig.E
Energy losses include “tail” and
diode reverse recovery.
Turn-on delay time td(on) - 21 - ns
Rise time tr- 16 - ns
Turn-off delay time td(off) - 195 - ns
Fall time tf- 21 - ns
Turn-on energy Eon - 0.57 - mJ
Turn-off energy Eoff - 0.15 - mJ
Total switching energy Ets - 0.72 - mJ
Tvj=150°C,
VCC=400V,IC=15.0A,
VGE=0.0/15.0V,
RG(on)=22.0Ω,RG(off)=22.0Ω,
Lσ=30nH,Cσ=30pF
Lσ,CσfromFig.E
Energy losses include “tail” and
diode reverse recovery.
Datasheet 6 V2.1
2018-01-11
IKB30N65EH5
Highspeedswitchingseries5thgeneration
DiodeCharacteristic,atTvj=150°C
Diode reverse recovery time trr - 110 - ns
Diode reverse recovery charge Qrr - 1.80 - µC
Diode peak reverse recovery current Irrm - 23.5 - A
Diode peak rate of fall of reverse
recoverycurrentduringtbdirr/dt - -700 - A/µs
Tvj=150°C,
VR=400V,
IF=30.0A,
diF/dt=850A/µs
Diode reverse recovery time trr - 90 - ns
Diode reverse recovery charge Qrr - 1.30 - µC
Diode peak reverse recovery current Irrm - 20.0 - A
Diode peak rate of fall of reverse
recoverycurrentduringtbdirr/dt - -720 - A/µs
Tvj=150°C,
VR=400V,
IF=15.0A,
diF/dt=850A/µs
Datasheet 7 V2.1
2018-01-11
IKB30N65EH5
Highspeedswitchingseries5thgeneration
Figure 1. Powerdissipationasafunctionofcase
temperature
(Tvj≤175°C)
TC,CASETEMPERATURE[°C]
Ptot,POWERDISSIPATION[W]
25 50 75 100 125 150 175
0
20
40
60
80
100
120
140
160
180
200
Figure 2. Collectorcurrentasafunctionofcase
temperature
(VGE≥15V,Tvj≤175°C)
TC,CASETEMPERATURE[°C]
IC,COLLECTORCURRENT[A]
25 50 75 100 125 150 175
0
10
20
30
40
50
60
Figure 3. Typicaloutputcharacteristic
(Tvj=25°C)
VCE,COLLECTOR-EMITTERVOLTAGE[V]
IC,COLLECTORCURRENT[A]
012345
0
10
20
30
40
50
60
70
80
90
VGE=18V
15V
12V
10V
8V
7V
6V
5V
4V
Figure 4. Typicaloutputcharacteristic
(Tvj=150°C)
VCE,COLLECTOR-EMITTERVOLTAGE[V]
IC,COLLECTORCURRENT[A]
012345
0
10
20
30
40
50
60
70
80
90
VGE=18V
15V
12V
10V
8V
7V
6V
5V
4V
Datasheet 8 V2.1
2018-01-11
IKB30N65EH5
Highspeedswitchingseries5thgeneration
Figure 5. Typicaltransfercharacteristic
(VCE=20V)
VGE,GATE-EMITTERVOLTAGE[V]
IC,COLLECTORCURRENT[A]
4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5
0
10
20
30
40
50
60
70
80
90
Tj=25°C
Tj=150°C
Figure 6. Typicalcollector-emittersaturationvoltageas
afunctionofjunctiontemperature
(VGE=15V)
Tvj,JUNCTIONTEMPERATURE[°C]
VCEsat,COLLECTOR-EMITTERSATURATION[V]
0 25 50 75 100 125 150 175
0.50
0.75
1.00
1.25
1.50
1.75
2.00
2.25
2.50
IC=7.5A
IC=15A
IC=30A
Figure 7. Typicalswitchingtimesasafunctionof
collectorcurrent
(inductiveload,Tvj=150°C,VCE=400V,
VGE=0/15V,RG=22Ω,Dynamictestcircuitin
Figure E)
IC,COLLECTORCURRENT[A]
t,SWITCHINGTIMES[ns]
0 10 20 30 40 50 60 70 80 90
1
10
100
td(off)
tf
td(on)
tr
Figure 8. Typicalswitchingtimesasafunctionofgate
resistor
(inductiveload,Tvj=150°C,VCE=400V,
VGE=0/15V,IC=30A,Dynamictestcircuitin
Figure E)
RG,GATERESISTOR[Ω]
t,SWITCHINGTIMES[ns]
5 15 25 35 45 55 65
1
10
100
1000
td(off)
tf
td(on)
tr
Datasheet 9 V2.1
2018-01-11
IKB30N65EH5
Highspeedswitchingseries5thgeneration
Figure 9. Typicalswitchingtimesasafunctionof
junctiontemperature
(inductiveload,VCE=400V,VGE=0/15V,
IC=30A,RG=22Ω,Dynamictestcircuitin
Figure E)
Tvj,JUNCTIONTEMPERATURE[°C]
t,SWITCHINGTIMES[ns]
25 50 75 100 125 150 175
1
10
100 td(off)
tf
td(on)
tr
Figure 10. Gate-emitterthresholdvoltageasafunction
ofjunctiontemperature
(IC=0.3mA)
Tvj,JUNCTIONTEMPERATURE[°C]
VGE(th),GATE-EMITTERTHRESHOLDVOLTAGE[V]
0 25 50 75 100 125 150
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
6.0
typ.
Figure 11. Typicalswitchingenergylossesasa
functionofcollectorcurrent
(inductiveload,Tvj=150°C,VCE=400V,
VGE=0/15V,RG=22Ω,Dynamictestcircuitin
Figure E)
IC,COLLECTORCURRENT[A]
E,SWITCHINGENERGYLOSSES[mJ]
0 10 20 30 40 50 60 70 80 90
0
1
2
3
4
5
6
7
Eoff
Eon
Ets
Figure 12. Typicalswitchingenergylossesasa
functionofgateresistor
(inductiveload,Tvj=150°C,VCE=400V,
VGE=0/15V,IC=30A,Dynamictestcircuitin
Figure E)
RG,GATERESISTOR[Ω]
E,SWITCHINGENERGYLOSSES[mJ]
5 15 25 35 45 55 65
0.00
0.25
0.50
0.75
1.00
1.25
1.50
1.75
2.00
2.25
2.50
Eoff
Eon
Ets
Datasheet 10 V2.1
2018-01-11
IKB30N65EH5
Highspeedswitchingseries5thgeneration
Figure 13. Typicalswitchingenergylossesasa
functionofjunctiontemperature
(inductiveload,VCE=400V,VGE=0/15V,
IC=30A,RG=22Ω,Dynamictestcircuitin
Figure E)
Tvj,JUNCTIONTEMPERATURE[°C]
E,SWITCHINGENERGYLOSSES[mJ]
25 50 75 100 125 150 175
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
Eoff
Eon
Ets
Figure 14. Typicalswitchingenergylossesasa
functionofcollectoremittervoltage
(inductiveload,Tvj=150°C,VGE=0/15V,
IC=30A,RG=22Ω,Dynamictestcircuitin
Figure E)
VCE,COLLECTOR-EMITTERVOLTAGE[V]
E,SWITCHINGENERGYLOSSES[mJ]
200 250 300 350 400 450 500
0.00
0.25
0.50
0.75
1.00
1.25
1.50
1.75
2.00
Eoff
Eon
Ets
Figure 15. Typicalgatecharge
(IC=30A)
QGE,GATECHARGE[nC]
VGE,GATE-EMITTERVOLTAGE[V]
0 10 20 30 40 50 60 70 80
0
2
4
6
8
10
12
14
16
130V
520V
Figure 16. Typicalcapacitanceasafunctionof
collector-emittervoltage
(VGE=0V,f=1MHz)
VCE,COLLECTOR-EMITTERVOLTAGE[V]
C,CAPACITANCE[pF]
0 5 10 15 20 25 30
1
10
100
1000
1E+4
Cies
Coes
Cres
Datasheet 11 V2.1
2018-01-11
IKB30N65EH5
Highspeedswitchingseries5thgeneration
Figure 17. IGBTtransientthermalimpedance
(D=tp/T)
tp,PULSEWIDTH[s]
Zth(j-c),TRANSIENTTHERMALIMPEDANCE[K/W]
1E-6 1E-5 1E-4 0.001 0.01 0.1 1
0.001
0.01
0.1
1
D=0.5
0.2
0.1
0.05
0.02
0.01
single pulse
i:
ri[K/W]:
τi[s]:
1
9.3E-3
1.6E-5
2
0.242715
3.4E-4
3
0.373613
2.7E-3
4
0.158334
0.014105
5
0.014318
0.204769
6
1.9E-3
2.877416
Figure 18. Diodetransientthermalimpedanceasa
functionofpulsewidth
(D=tp/T)
tp,PULSEWIDTH[s]
Zth(j-c),TRANSIENTTHERMALIMPEDANCE[K/W]
1E-7 1E-6 1E-5 1E-4 0.001 0.01 0.1 1
0.001
0.01
0.1
1
D=0.5
0.2
0.1
0.05
0.02
0.01
single pulse
i:
ri[K/W]:
τi[s]:
1
0.014545
1.6E-5
2
0.309949
3.4E-4
3
0.475571
2.6E-3
4
0.182319
0.01432
5
0.01682
0.201605
6
2.2E-3
2.700794
Figure 19. Typicalreverserecoverytimeasafunction
ofdiodecurrentslope
(VR=400V)
diF/dt,DIODECURRENTSLOPE[A/µs]
trr,REVERSERECOVERYTIME[ns]
500 600 700 800 900 1000
50
60
70
80
90
100
110
120
130
140
150
Tj=25°C, IF = 30A
Tj=150°C, IF = 30A
Figure 20. Typicalreverserecoverychargeasa
functionofdiodecurrentslope
(VR=400V)
diF/dt,DIODECURRENTSLOPE[A/µs]
Qrr,REVERSERECOVERYCHARGE[µC]
500 600 700 800 900 1000
0.00
0.25
0.50
0.75
1.00
1.25
1.50
1.75
2.00
Tj=25°C, IF = 30A
Tj=150°C, IF = 30A
Datasheet 12 V2.1
2018-01-11
IKB30N65EH5
Highspeedswitchingseries5thgeneration
Figure 21. Typicalpeakreverserecoverycurrentasa
functionofdiodecurrentslope
(VR=400V)
diF/dt,DIODECURRENTSLOPE[A/µs]
Irrm,REVERSERECOVERYCURRENT[A]
500 600 700 800 900 1000
5.0
7.5
10.0
12.5
15.0
17.5
20.0
22.5
25.0
27.5
30.0
Tj=25°C, IF = 30A
Tj=150°C, IF = 30A
Figure 22. Typicaldiodepeakrateoffallofreverse
recoverycurrentasafunctionofdiode
currentslope
(VR=400V)
diF/dt,DIODECURRENTSLOPE[A/µs]
dIrr/dt,diodepeakrateoffallofIrr[A/µs]
500 600 700 800 900 1000
-900
-800
-700
-600
-500
-400
-300
-200
-100
0
Tj=25°C, IF = 30A
Tj=150°C, IF = 30A
Figure 23. Typicaldiodeforwardcurrentasafunction
offorwardvoltage
VF,FORWARDVOLTAGE[V]
IF,FORWARDCURRENT[A]
0.00 0.25 0.50 0.75 1.00 1.25 1.50 1.75 2.00 2.25
0
10
20
30
40
50
60
70
80
90
Tj=25°C
Tj=150°C
Figure 24. Typicaldiodeforwardvoltageasafunction
ofjunctiontemperature
Tvj,JUNCTIONTEMPERATURE[°C]
VF,FORWARDVOLTAGE[V]
25 50 75 100 125 150 175
1.0
1.1
1.2
1.3
1.4
1.5
1.6
1.7
1.8
1.9
2.0
IF=15A
IF=30A
IF=60A
Datasheet 13 V2.1
2018-01-11
IKB30N65EH5
Highspeedswitchingseries5thgeneration
01
30-08-2007
Z8B00003324
0.039
0.000
0.026
0.335
0.013
0.037
MIN
0.169
0.046
0.280
0.090
0.386
8.60 0.3390.256
0.575
0.632
0.366
0.177
0.421
0.049
0.144
5.08
2.54
1.00
7.10
2.29
9.80
6.50
9.30
4.50
14.61
16.05
10.70
1.25
3.65
0.70
2
0.00
0.65
0.33
8.51
0.95
4.30
MIN
1.17
1.60
1.78
7.90
10.31
3.00
15.88
16.25
9.50
4.70
10.90
1.45
3.85
MAX
4.57
0.25
1.15
0.65
9.45
0.85
1.40
0.200
0.100
0.028
2
0.063
0.070
0.311
0.406
0.118
0.625
0.640
0.374
0.185
0.429
0.057
0.152
0.010
0.180
0.033
0.026
0.372
0.045
MAX
0.055
0
7.5mm
5
5
0
Package Drawing PG-TO263-3
Datasheet 14 V2.1
2018-01-11
IKB30N65EH5
Highspeedswitchingseries5thgeneration
t
ab
td(off) tftr
td(on)
90% IC
10% IC
90% IC
10% VGE
10% IC
t
90% VGE
t
t
90% VGE
VGE(t)
t
t
t
t1t4
2% IC
10% VGE
2% VCE
t2t3
E
t
t
V I t
off = x x d
1
2
CE C
E
t
t
V I t
on = x x d
3
4
CE C
CC
dI /dt
F
dI
I,V
Figure A.
Figure B.
Figure C. Definition of diode switching
characteristics
Figure E. Dynamic test circuit
Figure D.
I (t)
C
Parasitic inductance L ,
parasitic capacitor C ,
relief capacitor C ,
(only for ZVT switching)
s
s
r
t t t
Q Q Q
rr a b
rr a b
= +
= +
QaQb
V (t)
CE
VGE(t)
I (t)
C
V (t)
CE
Testing Conditions
Datasheet 15 V2.1
2018-01-11
IKB30N65EH5
Highspeedswitchingseries5thgeneration
RevisionHistory
IKB30N65EH5
Revision:2018-01-11,Rev.2.1
Previous Revision
Revision Date Subjects (major changes since last revision)
2.1 2018-01-11 Final data sheet
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81726München,Germany
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