MSC80064 RF & MICROWAVE TRANSISTORS GENERAL PURPOSE LINEAR APPLICATIONS Features * * * * * 2.0 GHz CLASS A LINEAR OPERATION 20:1 VSWR CAPABILITY @ RATED CONDITIONS POUT = 20.5 dBm MINIMUM COMMON EMITTER CONFIGURATION DESCRIPTION: The MSC80064 is a hermetically sealed NPN power transistor specifically designed for Class A linear applications requiring high gain and high output power at the 1.0 dB compression point. ABSOLUTE MAXIMUM RATINGS (Tcase = 25C) Symbol PDISS IC VCE TJ TSTG Parameter Power Dissipation Device Bias Current Collector-Supply Bias Voltage Junction Temperature Storage Temperature Value Unit 1.44 100 20 200 - 65 to +200 W mA V C C 45 C/W Thermal Data RTH(J-C) 12-05-2002 Junction-case Thermal Resistance MSC80064 ELECTRICAL SPECIFICA SPECIFICATIONS TIONS (Tcase = 25 25C) STATIC Symbol BVCBO BVEBO BVCEO ICEO HFE Test Conditions IC = 1 mA IE = 1 mA IC = 5 mA VCE = 18 V VCE = 5 V Min. Value Typ. Max. Unit 50 3.5 20 --15 ----------- ------0.5 120 V V V mA --- IE = 0 mA IC =0 mA IB = 0 mA IC = 50 mA DYNAMIC Symbol Test Conditions GP f =2.0 GHz POUT = 20.5 dBm GP f =2.0 GHz POUT = 20.5 dBm COB f =1 MHz VCB =28 V Conditions VCE = 18V IE = 50 mA POUT = 10 dB Min. Value Typ. Max. Unit 9.0 --- --- dB --- --- 1 dB --- --- 2.5 pf Table 1. Common Emitter S-Parameters, @ VCE = 18 V, IC = 50 mA f S11 S21 S12 S22 (MHz) |S11| |S21| |S12| |S22| 1.0 0.68 168 3.8 43 0.04 45 0.03 -70 2.0 0.60 139 2.0 18 0.065 42 0.04 -100 3.0 0.40 72 1.0 -47 0.1051 18 0.60 -133 12-05-2002 MSC80064 PACKAGE MECHANICAL DATA 12-05-2002