12-05-2002
MSC80064
DESCRIPTION:
DESCRIPTION:DESCRIPTION:
DESCRIPTION:
The MSC80064 is a hermetically sealed NPN power
transistor specifically designed for Class A linear
applications requiring high gain and high output
power at the 1.0 dB compression point.
ABSOLUTE MAXIMUM RATINGS
ABSOLUTE MAXIMUM RATINGS ABSOLUTE MAXIMUM RATINGS
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°
°°
°C)
S
y
mbol Paramete
r
V
alue Unit
PDISS Power Dissi
p
ation 1.44 W
IC Device Bias Current 100 mA
VCE Collector-Supply Bias Voltage 20 V
TJ Junction Temperature 200 °
°°
°C
TSTG Storage Temperature - 65 to +200 °
°°
°C
Thermal Data
Thermal DataThermal Data
Thermal Data
RTH(J-C) Junction-case Thermal Resistance 45 °
°°
°C/W
Features
FeaturesFeatures
Features
2.0 GHz
CLASS A LINEAR OPERATION
20:1 VSWR CAPABILITY @ RATED CONDITIONS
POUT = 20.5 dBm MINIMUM
COMMON EMITTER CONFIGURATION
RF & MICROWAVE TRANSISTORS
GENERAL PURPOSE LINEAR APPLICATIONS
12-05-2002
MSC80064
ELECTRICAL SPECIFICA
ELECTRICAL SPECIFICA ELECTRICAL SPECIFICA
ELECTRICAL SPECIFICATIONS (Tcase = 25
TIONS (Tcase = 25TIONS (Tcase = 25
TIONS (Tcase = 25°
°°
°C)
C)C)
C)
STATIC
STATICSTATIC
STATIC
S
y
mbol Test Conditions
V
alue
Min. T
yp
. Max. Unit
BVCBO I
C = 1 mA IE = 0 mA 50 --- --- V
BVEBO I
E = 1 mA IC =0 mA 3.5 --- --- V
BVCEO I
C = 5 mA IB = 0 mA 20 --- --- V
ICEO V
CE = 18 V --- --- 0.5 mA
HFE V
CE = 5 V IC = 50 mA 15 --- 120 ---
DYNAMIC
DYNAMICDYNAMIC
DYNAMIC
S
y
mbol Test Conditions
V
alue
Min. Typ. Max. Unit
GP f =2.0 GHz POUT = 20.5 dBm 9.0 --- --- dB
GP f =2.0 GHz POUT = 20.5 dBm
POUT = 10 dB --- --- 1 dB
COB f =1 MHz VCB =28 V --- --- 2.5 pf
Conditions VCE = 18V IE = 50 mA
Table 1. Common Emitter S-Parameters, @ VCE = 18 V, IC = 50 mA
f S11 S21 S12 S22
(MHz) |S11| ∠ φ
∠ φ∠ φ
∠ φ
|S21| ∠ φ
∠ φ∠ φ
∠ φ |S12|
∠ φ
∠ φ∠ φ
∠ φ |S22| ∠ φ
∠ φ∠ φ
∠ φ
1.0 0.68 168 3.8 43 0.04 45 0.03 -70
2.0 0.60 139 2.0 18 0.065 42 0.04 -100
3.0 0.40 72 1.0 -47 0.1051 18 0.60 -133
12-05-2002
MSC80064
PACKAGE MECHANICAL DATA
PACKAGE MECHANICAL DATA PACKAGE MECHANICAL DATA
PACKAGE MECHANICAL DATA