MPSA27 - ON Semiconductor - Datasheet.Live

January, 2006 − Rev. 3 1Publication Order Number:

MPSA27/D

MPSA27

Darlington Transistor

NPN Silicon

Features

•Pb−Free Packages are Available*

MAXIMUM RATINGS

Rating Symbol Value Unit

Collector−Emitter Voltage VCES 60 Vdc

Emitter−Base Voltage VEBO 10 Vdc

Collector Current − Continuous IC500 mAdc

Total Device Dissipation @ TA = 25°C

Derate above 25°CPD625

5.0 mW

mW/°C

Operating and Storage Junction

Temperature Range TJ, Tstg −55 to +150 °C

THERMAL CHARACTERISTICS

Characteristic Symbol Max Unit

Thermal Resistance, Junc tion−to−A m bient RqJA 200 °C/W

Maximum ratings are those values beyond which device damage can occur.

Maximum ratings applied to the device are individual stress limit values (not

normal operating conditions) and are not valid simultaneously. If these limits are

exceeded, device functional operation is not implied, damage may occur and

reliability may be affected.

*For additional information on our Pb−Free strategy and soldering details, please

download the ON Semiconductor Soldering and Mounting Techniques

Reference Manual, SOLDERRM/D.

http://onsemi.com

† For information on tape and reel specifications,

including part orientation and tape sizes, please

refer t o our Tape and Reel Packaging Specification

Brochure, BRD8011/D.

MPSA27RLRM TO−92 2000/Ammo Pack

MPSA27RLRMG TO−92

(Pb−Free) 2000/Ammo Pack

MPSA27RLRA TO−92 2000/Tape & Ree

MPSA27RLRAG TO−92

(Pb−Free) 2000/Tape & Ree

Device Package Shipping†

MPSA27 TO−92 5000 Units/Box

MPSA27G TO−92

(Pb−Free) 5000 Units/Box

ORDERING INFORMATION

COLLECTOR 3

BASE

EMITTER 1

MPSA27 = Device Code

A = Assembly Location

Y = Year

WW = Work Week

G= Pb−Free Package

(Note: Microdot may be in either location)

TO−92

CASE 29−11

STYLE 1

123

MARKING

DIAGRAM

MPS

A27

AYWW G

MPSA27

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ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)

Characteristic Symbol Min Typ Max Unit

OFF CHARACTERISTICS

Collector−Emitter Breakdown Voltage

(IC = 100 mAdc, VBE = 0) V(BR)CES 60 − − Vdc

Collector−Base Breakdown Voltage

(IC = 100 mAdc, IE = 0) V(BR)CBO 60 − − Vdc

Collector Cutoff Current

(VCB = 30 V, IE = 0)

(VCB = 40 V, IE = 0)

(VCB = 50 V, IE = 0)

ICBO − − 100 nAdc

Collector Cutoff Current

(VCE = 30 V, VBE = 0)

(VCE = 40 V, VBE = 0)

(VCE = 50 V, VBE = 0)

ICES − − 500 nAdc

Emitter Cutoff Current

(VEB = 10 Vdc) IEBO − − 100 nAdc

ON CHARACTERISTICS (Note 1)

DC Current Gain

(IC = 10 mA, VCE = 5.0 V)

(IC = 100 mA, VCE = 5.0 V)

hFE 10,000

10,000 −

−−

−

Collector−Emitter Saturation Voltage

(IC = 100 mA, IB = 0.1 mAdc) VCE(sat) − − 1.5 Vdc

Base−Emitter On Voltage

(IC = 100 mA, VCE = 5.0 Vdc) VBE(on) − − 2.0 Vdc

SMALL−SIGNAL CHARACTERISTICS

Small Signal Current Gain

(IC = 10 mA, VCE = 5.0 V, f = 100 MHz) hfe 1.25 2.4 − −

1. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2.0%.

MPSA27

http://onsemi.com

Figure 1. DC Current Gain Figure 2. “ON” Voltages

Figure 3. Collector Saturation Region Figure 4. High Frequency Current Gain

Figure 5. Active Region − Safe Operating Area

100 1 k1.0

IC, COLLECTOR CURRENT (mA)

120

100

IC, COLLECTOR CURRENT (mA)

100 1 k1.0

1.4

1.0

0.8

0.6

100 5001.0

IB, BASE CURRENT (mA)

1.1

1.0

0.9

0.8

0.7

IC, COLLECTOR CURRENT (mA)

1.00.5

1.0

2.0

0.8

0.6

0.4

0.2

2.0200

2.0 101.0

VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS)

1 k

200

100

4.0

VCE = 5.0 V

hFE, DC CURRENT GAIN (k)

V, VOLTAGE (VOLTS)

h , SMALL−SIGNAL CURRENT GAIN

0102.0 3.0 20 30 200 500

TA = 125°C

TA = 25°C

TA = −55°C

200 5002.0 10 20

1.2

1.6 TA = 25°C

VBE(S) @ IC/IB = 1.0 k

VCE(S) @ IC/IB = 1.0 k

VBE(ON) @ VCE = 5.0 V

2.0 5.0 10 20 50 10 20 100 200

, COLLECTOR CURRENT (mA)IC

20 50

500

1.0 ms

1.0 s

TA = 25°C

CURRENT LIMIT

THERMAL LIMIT

SECOND BREAKDOWN LIMIT

100 ms

TC = 25°C

TA = 25°C

IC = 10 mA

IC = 100 mA IC = 250 mA

IC = 500 mA

1 k0.1 0.2 0.5

1.3

1.2

1.4

1.6

1.5

, COLLECTOR−EMITTER VOLTAGE (VOLTS)

4.0

5.0 50050

VCE = 5.0 V

f = 100 MHz

TA = 25°C

6.0 40 60

3.0 30

MPSA27

http://onsemi.com

PACKAGE DIMENSIONS

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI

Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

3. CONTOUR OF PACKAGE BEYOND DIMENSION R

IS UNCONTROLLED.

4. LEAD DIMENSION IS UNCONTROLLED IN P AND

BEYOND DIMENSION K MINIMUM.

SECTION X−X

SEATING

PLANE DIM MIN MAX MIN MAX

MILLIMETERSINCHES

A0.175 0.205 4.45 5.20

B0.170 0.210 4.32 5.33

C0.125 0.165 3.18 4.19

D0.016 0.021 0.407 0.533

G0.045 0.055 1.15 1.39

H0.095 0.105 2.42 2.66

J0.015 0.020 0.39 0.50

K0.500 −−− 12.70 −−−

L0.250 −−− 6.35 −−−

N0.080 0.105 2.04 2.66

P−−− 0.100 −−− 2.54

R0.115 −−− 2.93 −−−

V0.135 −−− 3.43 −−−

TO−92 (TO−226)

CASE 29−11

ISSUE AL

STYLE 1:

PIN 1. EMITTER

2. BASE

3. COLLECTOR

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MPSA27/D

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