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File Number 3106.3
1-888-INTERSIL or 321-724-7143 |Copyright © Intersil Corporation 2000
RHRG50100
50A, 1000V Hyperfast Diode
The RHRG50100 is a hyperfast diode with soft recovery
characteristics (trr < 75ns). It has half the recovery time of
ultrafast diodes and is of silicon nitride passivated
ion-implanted epitaxial planar construction.
This device is intended for use as a freewheeling/clamping
diode and rectifier in a variety of switching power supplies
and other power switching applications. Its low stored charge
and hyperfast soft recovery minimize ringing and electrical
noise in many power switching circuits, thus reducing power
loss in the switching transistors.
Formerly developmental type TA49066.
Symbol
Features
• Hyperfast with Soft Recovery. . . . . . . . . . . . . . . . . .<75ns
• Operating Temperature. . . . . . . . . . . . . . . . . . . . . . .175oC
• Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . .1000V
• Avalanche Energy Rated
• Planar Construction
Applications
• Switching Power Supplies
• Power Switching Circuits
• General Purpose
Packaging JEDEC STYLE TO-247
Ordering Information
PART NUMBER PACKAGE BRAND
RHRG50100 TO-247 RHRG50100
NOTE: When ordering, use the entire part number.
K
A
CATHODE CATHODE
ANODE
METAL)
(BOTTOM SIDE
Absolute Maximum Ratings TC = 25oC
RHRG50100 UNITS
Peak Repetitive Reverse Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VRRM 1000 V
Working Peak Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VRWM 1000 V
DC Blocking Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VR1000 V
Average Rectified Forward Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .IF(AV)
(TC = 60oC) 50 A
Repetitive Peak Surge Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IFRM
(Square Wave, 20kHz) 100 A
Nonrepetitive Peak Surge Current. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .IFSM
(Halfwave, 1 Phase, 60Hz) 500 A
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD150 W
Avalanche Energy (See Figures 7 and 8) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . EAVL 40 mJ
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TSTG, TJ-65 to 175 oC
Data Sheet January 2000
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Electrical Specifications TC = 25oC, Unless Otherwise Specified
SYMBOL TEST CONDITION MIN TYP MAX UNITS
VFIF = 50A - - 3.0 V
IF = 50A, TC = 150oC - - 2.5 V
IRVR = 1000V - - 250 µA
VR = 1000V, TC = 150oC - - 3.0 mA
trr IF = 1A, dIF/dt = 100A/µs--75ns
IF = 50A, dIF/dt = 100A/µs--95ns
taIF = 50A, dIF/dt = 100A/µs - 54 - ns
tbIF = 50A, dIF/dt = 100A/µs - 32 - ns
RθJC - - 1.0 oC/W
DEFINITIONS
VF = Instantaneous forward voltage (pw = 300µs, D = 2%).
IR = Instantaneous reverse current.
trr = Reverse recovery time (See Figure 6), summation of ta + tb.
ta = Time to reach peak reverse current (See Figure 6).
tb = Time from peak IRM to projected zero crossing of IRM based on a straight line from peak IRM through 25% of IRM (See Figure 6).
RθJC = Thermal resistance junction to case.
pw = Pulse width.
D = Duty cycle.
Typical Performance Curves
FIGURE 1. FORWARD CURRENT vs FORWARD VOLTAGE FIGURE 2. REVERSE CURRENT vs REVERSE VOLTAGE
VF, FORWARD VOLTAGE (V)
IF, FORWARD CURRENT (A)
150
100
10
10 0.5 1 1.5 2.5 3.523
175oC
25oC
100oC
VR, REVERSE VOLTAGE (V)
100
10
1
0 1000200 800600400
1000
3000
0.01
0.1
IR, REVERSE CURRENT (µA)
25oC
100oC
175oC
RHRG50100
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All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification.
Intersil semiconductor products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time with-
out notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and
reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result
from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.
For information regarding Intersil Corporation and its products, see web site www.intersil.com
FIGURE 3. trr,t
aAND tbCURVES vs FORWARD CURRENT FIGURE 4. CURRENT DERATING CURVE
Typical Performance Curves (Continued)
IF, FORWARD CURRENT (A)
50101
ta
tb
0
20
80
40
100
60
trr
t, RECOVERY TIMES (ns)
TC = 25oC, dIF/dt = 100A/µs
T
C
, CASE TEMPERATURE (
o
C)
50
20
025 50 75 100 150 175125
40
10
30 SQ. WAVE
I
F(AV)
, AVERAGE FORWARD CURRENT (A)
DC
Test Circuits and Waveforms
FIGURE 5. trr TEST CIRCUIT FIGURE 6. trr WAVEFORMS AND DEFINITIONS
FIGURE 7. AVALANCHE ENERGY TEST CIRCUIT FIGURE 8. AVALANCHE CURRENT AND VOLTAGE
WAVEFORMS
RG
L
VDD
IGBT
CURRENT
SENSE
DUT
VGE t1
t2
VGE AMPLITUDE AND
t1 AND t2CONTROL IF
RG CONTROL dIF/dt
+
-
dt
dIF
IFtrr
tatb
0
IRM
0.25 IRM
DUT
CURRENT
SENSE +
LR
VDD
R < 0.1Ω
EAVL = 1/2LI2 [VR(AVL)/(VR(AVL) - VDD)]
Q1= IGBT (BVCES > DUT VR(AVL))
-
VDD
Q1
IMAX = 1.4A
L = 40mH
IV
t0t1t2
IL
VAVL
t
IL
RHRG50100
