GaAlAs Infrared Emitting Diodes VTE1285H T-13/4 (5 mm) Bullet Package -- 880 nm PACKAGE DIMENSIONS inch (mm) CASE 62 T-13/4 (5 mm) BULLET CHIP SIZE: .015" x .015" DESCRIPTION This 5 mm diameter, custom lensed device contains a medium area, single wirebonded, GaAlAs, 880 nm high efficiency IRED chip. The custom lens allows this cost effective device to have a very narrow half power beam emission of 8. RoHS Compliant ABSOLUTE MAXIMUM RATINGS @ 25C (unless otherwise noted) Maximum Temperatures Storage and Operating: Continuous Power Dissipation: Derate above 30C: Maximum Continuous Current: Derate above 30C: Peak Forward Current, 10 s, 100 pps: Temp. Coefficient of Power Output (Typ.): Maximum Reverse Voltage: Maximum Reverse Current @ VR = 5V: Peak Wavelength (Typical): Junction Capacitance @ 0V, 1 MHz (Typ.): Response Time @ IF = 20 mA Rise: 1.0 s Fall: 1.0 s Lead Soldering Temperature: (1.6 mm from case, 5 seconds max.) -40C to 100C 200 mW 2.86 mW/C 100 mA 1.43 mA/C 2.5 A -.8%/C 5.0V 10 A 880 nm 23 pF 260C ELECTRO-OPTICAL CHARACTERISTICS @ 25C (See also GaAlAs curves, pages 108-110) Output Irradiance Part Number Ee VTE1285H 3.0 Half Power Beam Angle Radiant Intensity Total Power Test Current VF Ie PO IFT @ IFT Volts Typ. Max. 1.5 2.0 Condition mW/cm2 Min. Forward Drop distance Diameter mW/sr mW Typ. mm mm Min. Typ. mA (Pulsed) 5.5 36 6.4 39 20 100 1/2 Typ. 8 Refer to General Product Notes, page 2. PerkinElmer Optoelectronics, 22001 Dumberry, Vaudreuil, Canada J7V 8P7 117 Phone: 877-734-6786 Fax: 450-424-3413 www.perkinelmer.com/opto