117
GaAlAs Infrared Emitting Diodes
T-1¾ (5 mm) Bul l et Packag e — 880 n m VTE1285H
PA CKAGE DIMENSIONS inch (mm)
CASE 62 T-1¾ (5 mm) BULLET
CHIP SIZE : .015" x .015"
DESCRIPTION
This 5 mm diameter, custom lensed device contains a medium area, single wirebonded, GaAlAs, 880 nm high efficiency IRED chip.
The custom lens allows this cost effective device to have a v ery narrow half power beam emission of ±8°.
ABSOLUTE MAXIMUM RATINGS @ 25°C (unless otherwise noted)
Maximum Temperatures
Storage and Operating: - 40°C to 100°C
Continuous Power Dissipation: 200 mW
Derate above 30°C: 2.86 mW /°C
Maximum Continuous Current: 100 mA
Derate above 30°C: 1.43 mA/°C
Peak Forward Current, 10 µs, 100 pps: 2.5 A
Temp. Coefficient of Power Output (Typ.): - .8%/°C
Maximum Re verse Voltage: 5.0V
Maximum Re verse Current @ V
R
= 5V: 10 µA
Peak Wavelength (Typical): 880 nm
Junction Capacitance @ 0V, 1 MHz (Typ.): 23 pF
Response T ime @ I
F
= 20 mA
Rise: 1.0 µs Fall: 1.0 µs
Lead Soldering Temperature: 260 °C
(1.6 mm from case , 5 seconds max.)
ELECTRO-OPT ICAL CHARACT ERISTICS @ 25°C (See also GaAlAs curves, pages 108-110)
Refer to General Product Notes, page 2.
Part Number
Output Forward Drop Half Power Beam
Angle
Irradiance Radiant
Intensity Total Power Test
Current VF
EeCondition IePOIFT @ IFT θ1/2
mW/cm2distance Diameter mW/sr mW mA
(Pulsed) Volts Typ.
Min. Typ. mm mm Min. Typ. Typ. Max.
VTE1285H 3.0 5.5 36 6.4 39 20 100 1.5 2.0 ±8°
PerkinElmer Optoelectronics, 22001 Dumberry, Vaudreuil, Canada J7V 8P7 Phone: 877-734-6786 Fax: 450-424-3413 www.perkinelmer.com/opto
RoHS Compliant
