©2002 Fairchild Semiconductor Corporation Rev. A2, August 2002
BC556/557/558/559/560
PNP Epitaxial Si licon Transistor
Absolute Maximum Ratings Ta=25°C unless otherwise noted
Electrical Characteristics Ta=25°C unless otherwise noted
hFE Classification
Symbol Parameter Value Units
VCBO Collector-Base Voltage
: BC556
: BC557/560
: BC558/559
-80
-50
-30
V
V
V
VCEO Collector-Emitter Voltage
: BC556
: BC557/560
: BC558/559
-65
-45
-30
V
V
V
VEBO Emitter-Base Voltage -5 V
ICCollector Current (DC) -100 mA
PCCollector Power Dissipation 500 mW
TJJunction Temperature 150 °C
TSTG Storage Temperature -65 ~ 150 °C
Symbol Parameter Test Condition Min. Typ. Max. Units
ICBO Collector Cut-off Current VCB= -30V, IE=0 -15 nA
hFE DC Current Gain VCE= -5V, IC=2mA 110 800
VCE
(sat) Collector-Emitter Saturation Voltage IC= -10mA, IB= -0.5 mA
IC= -100mA, IB= -5mA -90
-250 -300
-650 mV
mV
VBE (sat) Collector-Base Saturat ion Voltage IC= -10mA, IB= -0.5 mA
IC= -100mA, IB= -5mA -700
-900 mV
mV
VBE (on) Base-Emitter On Voltage
VCE= -5V, IC= -2mA
VCE= -5V, IC= -10mA -600 -660 -750
-800 mV
mV
fTCurrent Gain Bandwidth Product VCE= -5V, IC= -10mA, f=10MHz 150 MHz
Cob Output Capacitance VCB= -10V, IE=0, f=1MHz 6 pF
NF Noise Figure : BC556/557/558
: BC559/560
: BC559
: BC560
VCE= -5V, IC= -200µA
f=1KHz, RG=2K
VCE= -5V, IC= -200µA
RG=2KΩ, f=30~15000MHz
2
1
1.2
1.2
10
4
4
2
dB
dB
dB
dB
Classification A B C
hFE 110 ~ 220 200 ~ 450 420 ~ 800
BC556/557/558/559/560
Switching and Amplifier
High Voltage: BC556, VCEO= -65V
Low Noise: BC559, BC560
Complement to BC546 ... BC 550
1. Collector 2. Base 3. Emitter
TO-92
1
©2002 Fairchild Semiconductor Corporation Rev. A2, August 2002
BC556/557/558/559/560
Typical Characteristics
Figure 1. Static Characteristic Figure 2. DC current Gain
Figure 3. Base-Emitter Saturation Vo ltage
Collector-Emitter Saturation Voltage Figure 4. Base-Emitter On Voltage
Figure 5. Collector Output Capacitance Figure 6. Current Gain Bandwidth Product
-2 -4 -6 -8 -10 -12 -14 -16 -18 -20
-0
-5
-10
-15
-20
-25
-30
-35
-40
-45
-50
IB = -50µA
IB = -100µA
IB = -150µA
IB = -200µA
IB = -250µA
IB = -300µA
IB = -350µA
IB = -400µA
IC[mA], COLLECTOR CURRENT
VCE[V], COLLECTOR-EMITTER VOLTAGE
-0.1 -1 -10 -100
1
10
100
1000
VCE = -5V
hFE, DC CURRENT GAIN
IC[mA], COLLECTOR CURRENT
-0.1 -1 -10 -100
-0.01
-0.1
-1
-10
IC = -10 IB
VCE(sat)
VBE(sat)
VBE(sat), VCE(sat)[V], SATURATION VOLTAGE
IC[mA], COLLECTOR CURRENT
-0.2 -0.4 -0.6 -0.8 -1.0 -1.2
-0.1
-1
-10
-100
VCE = -5V
IC[mA], COLLECTOR CURRENT
VBE[V], BASE-EMITTER VOLTAGE
-1 -10 -100
1
10
f=1MHz
IE = 0
Cob(pF), CAPACITANCE
VCB[V], COLLECTOR-BASE VOLTAGE
-1 -10
10
100
1000
VCE = -5V
fT[MHz], CURRENT GAIN-BANDWIDTH PRODUCT
IC[mA], COLLECTOR CURRENT
Package Dimensions
BC556/557/558/559/560
0.46 ±0.10
1.27TYP
(R2.29)
3.86MAX
[1.27 ±0.20]1.27TYP
[1.27 ±0.20]
3.60 ±0.20
14.47 ±0.40
1.02 ±0.10
(0.25) 4.58 ±0.20
4.58 +0.25
–0.15
0.38 +0.10
–0.05
0.38 +0.10
–0.05
TO-92
Dimensions in Millimeters
©2002 Fairchild Semiconductor Corporation Rev. A2, August 2002
©2002 Fairchild Semiconductor Corporation Rev. I1
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when properly used in accordance with instructions for use
provided in the labeling, can be reasonably expected to
result in significant injury to the user.
2. A critical component is any component of a life support
device or system whose failure to perform can be
reasonably expected to cause the failure of the life support
device or system, or to affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
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Advance Information Formative or In
Design This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
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