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Revision:B 2017/11/30
Micro Commercial Components
M C C
R
P-ch MOSFET ELECTRICAL CHARACTERISTICS(Ta=25℃ unless otherwise noted)
Parameter Symbol Test Condition Min Typ Max Unit
STATIC CHARACTERISTICS
Drain-source breakdown voltage V(BR)DSS VGS = 0V, ID =-250µA -12 V
Zero gate voltage drain current IDSS VDS =-8V,VGS = 0V -1 µA
Gate-body leakage current IGSS VGS =±8V, VDS = 0V ±100 nA
Gate threshold voltage (note 2) GS(th)
V
VDS =VGS, ID =-250µA -0.5 -0.9 V
Drain-source on-resistance(note 2) DS(o
R
n)
VGS =-4.5V, ID =-3.5A 45 m
VGS =-2.5V, ID =-3A 60 m
VGS =-1.8V, ID =-2A 90 m
Forward tranconductance(note 2) FS
gVDS =-5V, ID =-4.1A 6 S
Diode forward voltage SD V
S=I-3.3A, VGS = 0V -1.2 V
DYNAMIC CHARACTERISTICS (note 4)
Input Capacitance Ciss
VDS =-4V,VGS =0V,f =1MHz
740 pF
Output Capacitance Coss 290 pF
Reverse Transfer Capacitance Crss 190 pF
SWITCHING CHARACTERISTICS (note 3,4)
Turn-on delay time td(on)
VGEN=-4.5V,VDD=-4V,
ID=-3.3A,RG=1 ,
RL=1.2Ω
20 ns
Turn-on rise time tr 53 ns
Turn-off delay time td(off) 48 ns
Turn-off fall time tf 20 ns
Total Gate Charge Qg VDS=-4V,ID=-4.1A,
VGS=-2.5V
9 nC
Gate-Source Charge Qgs 1.2 nC
Gate-Drain Charge Qgd 1.6 nC
Notes :
2.Pulse Test:Pulse width=300us,duty cycle≤2%.
3.Switching characteristics are independent of operating junction temperature.
4.Graranted by design,not subject to producting.