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©2007 Fairchild Semiconductor Corporation 1www.fairchildsemi.com
EGP30A - EGP30K Rev. A
EGP30A - EGP30K 3.0 Ampere Glass Passivated High Efficiency Rectifiers
July 2007
EGP30A - EGP30K
3.0 Ampere Glass Passivated High Efficiency Rectifiers
Features
Glass passivated cavity-free junction
High surge current capability
Low leakage current
Superfast recovery time for high efficiency
Low forward voltage, high current capability
Absolute Maximum Ratings* Ta = 25°C unless otherwise no ted
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
Electrical Characteristics* Ta = 25°C unless otherwise noted
* Pulse Test: Pulse Width300μs, Duty Cycle2%
Symbol Parameter Value Units
IOAverage Rectified Current
.375 " lead length @ TL = 55°C3.0 A
if(surge) Peak Forward Surge Current
8.3 ms single half- sin e- wa ve
Superimposed on rated load (JEDEC method) 125 A
PDTotal Device Dissipation
Derate above 25°C6.25
50 W
mW°C
RθJA Thermal Resistance, Junction to Ambient 20 °C/W
RθJL Thermal Resistance, Junction to Lead 8.5 °C/W
TJ, TSTG Junction and Storage Tem p er at ur e Ra ng e -65 ~ 150 °C
Parameter Device Units
30A 30B 30C 30D 30F 30G 30J 30K
Peak Repetitive Reverse Voltage 50 100 150 200 300 400 600 800 V
Maximum RMS Voltage 35 70 105 140 210 280 420 560 V
DC Reverse Voltage (Rated VR)50 100 150 200 300 400 600 800 V
Maximum Reverse Current
@ rated VR TA = 25°C
T A = 125°C5.0
100 μA
μA
Maximum Reve rs e Re co ver y Time
IF = 0.5 A, IR = 1.0 A, Irr = 0.25 A 50 75 nS
Maximum Forward Voltage @ 3.0 A 0.95 1.25 1.7 V
Typical Junct i on Capacitance
VR = 4.0 V, f = 1.0 MHz 95 75 pF
DO-201AD Glas s ca s e
COLOR BAND DENOTES CATHODE
2www.fairchildsemi.com
EGP30A - EGP30K Rev. A
EGP30A - EGP30K 3.0 Ampere Glass Passivated High Efficiency Rectifiers
Typical Performance Characteristics
3www.fairchildsemi.com
EGP30A - EGP30K Rev. A
EGP30A - EGP30K 3.0 Ampere Glass Passivated High Efficiency Rectifiers
Reverse Recovery Time Characterstic and Test Circuit Diagram
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Rev. I30
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