JANSG2N7433 - International Rectifier

Absolute Maximum Ratings

Parameter Units

ID @ VGS = 12V, TC = 25°C Continuous Drain Current 35*

ID @ VGS = 12V, TC = 100°C Continuous Drain Current 25

IDM Pulsed Drain Current À140

PD @ TC = 25°C Max. Power Dissipation 250 W

Linear Derating Factor 2.0 W/°C

VGS Gate-to-Source Voltage ±20 V

EAS Single Pulse Avalanche Energy Á500 mJ

IAR Avalanche Current À35 A

EAR Repetitive Avalanche Energy À25 mJ

dv/dt Peak Diode Recovery dv/dt Â5.7 V/ns

TJOperating Junction -55 to 150

TSTG Storage Temperature Range

Lead Temperature 300 (0.063 in.(1.6mm) from case for 10s)

Weight 9.3 (Typical) g

Pre-Irradiation

International Rectifier’s RAD-HardTM HEXFET®

technology provides high performance power

MOSFETs for space applications. This technology

has over a decade of proven performance and

reliability in satellite applications. These devices have

been characterized for both Total Dose and Single

Event Effects (SEE). The combination of low Rdson

and low gate charge reduces the power losses in

switching applications such as DC to DC converters

and motor control. These devices retain all of the well

established advantages of MOSFETs such as voltage

control, fast switching, ease of paralleling and

temperature stability of electrical parameters.

oC

A

RADIATION HARDENED

POWER MOSFET

THRU-HOLE (T0-254AA)

08/09/07

www.irf.com 1

TO-254AA

Features:

nSingle Event Effect (SEE) Hardened

nLow RDS(on)

nLow Total Gate Charge

nSimple Drive Requirements

nEase of Paralleling

nHermetically Sealed

nCeramic Package

nLight Weight

IRHM7260

JANSR2N7433

200V, N-CHANNEL

REF: MIL-PRF-19500/663

RAD-Hard

™

HEXFET

®

TECHNOLOGY

Product Summary

Part Number Radiation Level RDS(on) ID QPL Part Number

IRHM7260 100K Rads (Si) 0.070Ω 35A* JANSR2N7433

IRHM3260 300K Rads (Si) 0.070Ω 35A* JANSF2N7433

IRHM4260 500K Rads (Si) 0.070Ω 35A* JANSG2N7433

IRHM8260 1000K Rads (Si) 0.070Ω 35A* JANSH2N7433

*Current is limited by package

For footnotes refer to the last page

PD-91332F

2www.irf.com

IRHM7260, JANSR2N7433 Pre-Irradiation

Note: Corresponding Spice and Saber models are available on the International Rectifier Website.

For footnotes refer to the last page

Source-Drain Diode Ratings and Characteristics

Parameter Min Typ Max Units Test Conditions

ISContinuous Source Current (Body Diode) — — 35*

ISM Pulse Source Current (Body Diode) À— — 140

VSD Diode Forward Voltage — — 1.8 V Tj = 25°C, IS = 35A, VGS = 0V Ã

trr Reverse Recovery Time — — 820 ns Tj = 25°C, IF = 35A, di/dt ≤ 100A/µs

QRR Reverse Recovery Charge — — 8.5 µC VDD ≤ 50V Ã

ton Forward Turn-On Time Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.

A

Thermal Resistance

Parameter Min Typ Max Units Test Conditions

RthJC Junction-to-Case — — 0.50

RthJA Junction-to-Ambient — — 48 °C/W Typical socket mount

RthCS Case-to-Sink — 0.21 —

Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)

Parameter Min Typ Max Units Test Conditions

BVDSS Drain-to-Source Breakdown Voltage 200 — — V VGS = 0V, ID = 1.0mA

∆BVDSS/∆TJTemperature Coefficient of Breakdown — 0.26 — V/°C Reference to 25°C, ID = 1.0mA

Voltage

RDS(on) Static Drain-to-Source On-State — — 0.070 ΩVGS = 12V, ID = 25A

Resistance — — 0.077 VGS = 12V, ID = 35A

VGS(th) Gate Threshold Voltage 2.0 — 4.0 V VDS = VGS, ID = 1.0mA

gfs Forward Transconductance 9.0 — — S VDS ≥ 15V, IDS = 25A Ã

IDSS Zero Gate Voltage Drain Current — — 25 VDS= 160V ,VGS = 0V

— — 250 VDS = 160V,

VGS = 0V, TJ = 125°C

IGSS Gate-to-Source Leakage Forward — — 100 VGS = 20V

IGSS Gate-to-Source Leakage Reverse — — -100 VGS = -20V

QgTotal Gate Charge — — 290 VGS =12V, ID =35A

Qgs Gate-to-Source Charge — — 42 nC VDS = 100V

Qgd Gate-to-Drain (‘Miller’) Charge — — 120

td(on) Turn-On Delay Time — — 50 VDD = 100V, ID =35A

trRise Time — — 200 VGS =12V, RG = 2.35Ω

td(off) Turn-Off Delay Time — — 200

tfFall Time — — 130

LS + LDTotal Inductance — 6.8 —

Ciss Input Capacitance — 5300 — VGS = 0V, VDS = 25V

C

oss Output Capacitance — 1200 — pF f = 1.0MHz

Crss Reverse Transfer Capacitance — 360 —

nA

Ã

nH

ns

µA

*Current limited by package

Measured from Drain lead (6mm /0.25in

from package) to Source lead (6mm /0.25in.

from package) with Source wires internally

bonded from Source Pin to Drain Pad

www.irf.com 3

Pre-Irradiation IRHM7260, JANSR2N7433

International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability.

The hardness assurance program at International Rectifier is comprised of two radiation environments.

Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both

pre- and post-irradiation performance are tested and specified using the same drive circuitry and test

conditions in order to provide a direct comparison.

Radiation Characteristics

Fig a. Single Event Effect, Safe Operating Area

International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for

Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.

For footnotes refer to the last page

Table 2. Single Event Effect Safe Operating Area

Ion LET Energy Range VDS(V)

(MeV/(mg/cm2)) (MeV) (µm) @VGS=0V @VGS=-5V @VGS=-10V @VGS=-15V @VGS=-20V

Cu 28 285 43 190 180 170 125 —

Br 36.8 305 39 100 100 100 50 —

0

50

100

150

200

0 -5 -10 -15 -20

VGS

VDS

Cu

Br

Table 1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation ÄÅ

Parameter 100 K Rads(Si)1 300K-1000K Rads (Si)2

Units

Test Conditions

Min Max Min Max

BVDSS Drain-to-Source Breakdown Voltage 200 — 200 — V VGS = 0V, ID = 1.0mA

VGS(th) Gate Threshold Voltage 2.0 4.0 1.25 4.5 VGS = VDS, ID = 1.0mA

IGSS Gate-to-Source Leakage Forward — 100 — 100 nA VGS = 20V

IGSS Gate-to-Source Leakage Reverse — -100 — -100 VGS = -20 V

IDSS Zero Gate Voltage Drain Current — 25 — 25 µA VDS = 160V, VGS = 0V

RDS(on) Static Drain-to-Source Ã — 0.070 — 0.11 Ω VGS = 12V, ID = 25A

On-State Resistance (TO-3)

1. Part number IRHM7260 (JANSR2N7433)

2. Part numbers IRHM3260 (JANSF2N7433), IRHM4260 (JANSG2N7432) and IRHM8260 (JANSH2N7433)

VSD Diode Forward Voltage Ã — 1.8 — 1.8 V VGS = 0V, IS = 35A

4www.irf.com

IRHM7260, JANSR2N7433 Pre-Irradiation

Fig 4. Normalized On-Resistance

Vs. Temperature

Fig 2. Typical Output CharacteristicsFig 1. Typical Output Characteristics

Fig 3. Typical Transfer Characteristics

10

100

1000

1 10 100

20µs PULSE WIDTH

T = 25 C

J°

TOP

BOTTOM

VGS

15V

12V

10V

9.0V

8.0V

7.0V

6.0V

5.0V

V , Drain-to-Source Voltage (V)

I , Drain-to-Source Current (A)

DS

D

5.0V

10

100

1000

1 10 100

20µs PULSE WIDTH

T = 150 C

J°

TOP

BOTTOM

VGS

15V

12V

10V

9.0V

8.0V

7.0V

6.0V

5.0V

V , Drain-to-Source Voltage (V)

I , Drain-to-Source Current (A)

DS

D

5.0V

10

100

1000

5678910 11 12

V = 50V

20µs PULSE WIDTH

DS

V , Gate-to-Source Voltage (V)

I , Drain-to-Source Current (A)

GS

D

T = 25 C

J°

T = 150 C

J°

-60 -40 -20 020 40 60 80 100 120 140 160

0.0

0.5

1.0

1.5

2.0

2.5

T , Junction Temperature ( C)

R , Drain-to-Source On Resistance

(Normalized)

J

DS(on)

°

V =

I =

GS

D

12V

40A

35A

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Pre-Irradiation IRHM7260, JANSR2N7433

Fig 8. Maximum Safe Operating Area

Fig 6. Typical Gate Charge Vs.

Gate-to-Source Voltage

Fig 5. Typical Capacitance Vs.

Drain-to-Source Voltage

Fig 7. Typical Source-Drain Diode

Forward Voltage

1 10 100

0

2000

4000

6000

8000

10000

V , Drain-to-Source Voltage (V)

C, Capacitance (pF)

DS

V

C

=

0V,

C

f = 1MHz

+ C

C SHORTED

GS

iss gs gd , ds

rss gd

oss ds gd

Ciss

Coss

Crss

040 80 120 160 200 240

0

4

8

12

16

20

Q , Total Gate Charge (nC)

V , Gate-to-Source Voltage (V)

G

GS

FOR TEST CIRCUIT

SEE FIGURE

I =

D

13

35A

V = 40V

DS

V = 100V

DS

V = 160V

DS

0.1

1

10

100

1000

0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5

V ,Source-to-Drain Voltage (V)

I , Reverse Drain Current (A)

SD

V = 0 V

GS

T = 150 C

J°

T = 25 C

J°

1 10 100 1000

VDS , Drain-to-Source Voltage (V)

1

10

100

1000

ID, Drain-to-Source Current (A)

Tc = 25°C

Tj = 150°C

Single Pulse

1ms

10ms

OPERATION IN THIS AREA

LIMITED BY R DS(on)

100µs

6www.irf.com

IRHM7260, JANSR2N7433 Pre-Irradiation

Fig 10a. Switching Time Test Circuit

VDS

90%

10%

VGS

t

d(on)

t

r

t

d(off)

t

f

Fig 10b. Switching Time Waveforms

VDS

Pulse Width ≤ 1 µs

Duty Factor ≤ 0.1 %

RD

VGS

RG

D.U.T.

+

-

VDD

Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case

Fig 9. Maximum Drain Current Vs.

Case Temperature

VGS

25 50 75 100 125 150

0

10

20

30

40

50

T , Case Temperature ( C)

I , Drain Current (A)

°

C

D

LIMITED BY PACKAGE

0.001

0.01

0.1

1

0.00001 0.0001 0.001 0.01 0.1 1 10

Notes:

1. Duty factor D = t / t

2. Peak T = P x Z + T

1 2

JDM thJC C

P

t

DM

1

2

t , Rectangular Pulse Duration (sec)

Thermal Response (Z )

1

thJC

0.01

0.02

0.05

0.10

0.20

0.50

SINGLE PULSE

(THERMAL RESPONSE)

www.irf.com 7

Pre-Irradiation IRHM7260, JANSR2N7433

Q

G

Q

GS

Q

GD

V

G

Charge

D.U.T. V

DS

I

D

I

G

3mA

V

GS

.3µF

50KΩ

.2µF

12V

Current Regulator

Same Type as D.U.T.

Current Sampling Resistors

+

-

12 V

Fig 13b. Gate Charge Test Circuit

Fig 13a. Basic Gate Charge Waveform

Fig 12c. Maximum Avalanche Energy

Vs. Drain Current

Fig 12b. Unclamped Inductive Waveforms

Fig 12a. Unclamped Inductive Test Circuit

tp

V

(BR)DSS

I

AS

R

G

I

AS

0.01

Ω

t

p

D.U.T

L

VDS

+

-V

DD

DRIVER

A

15V

20V

VGS

25 50 75 100 125 150

0

200

400

600

800

1000

1200

1400

Starting T , Junction Temperature ( C)

E , Single Pulse Avalanche Energy (mJ)

J

AS

°

ID

TOP

BOTTOM

16A

22A

35A

8www.irf.com

IRHM7260, JANSR2N7433 Pre-Irradiation

Ã Pulse width ≤ 300 µs; Duty Cycle ≤ 2%

Ä Total Dose Irradiation with VGS Bias.

12 volt VGS applied and VDS = 0 during

irradiation per MIL-STD-750, method 1019, condition A.

Å Total Dose Irradiation with VDS Bias.

160 volt VDS applied and VGS = 0 during

irradiation per MlL-STD-750, method 1019, condition A.

À Repetitive Rating; Pulse width limited by

maximum junction temperature.

Á VDD = 50V, starting TJ = 25°C, L=0.82mH

Peak IL = 35A, VGS =12V

Â ISD ≤ 35A, di/dt ≤ 410A/µs,

VDD ≤ 200V, TJ ≤ 150°C

Foot Notes:

Case Outline and Dimensions — TO-254AA

3.81 [.150]

0.12 [.005]

1.27 [.050]

1.02 [.040]

6.60 [.260]

6.32 [.249]

C14.48 [.570]

12.95 [.510]

3X

0.36 [.014] B A

1.14 [.045]

0.89 [.035]

2X

3.81 [.150]

20.32 [.800]

20.07 [.790]

13.84 [.545]

13.59 [.535]

3.78 [.149]

3.53 [.139]

17.40 [.685]

16.89 [.665]

A

123

13.84 [.545]

13.59 [.535]

0.84 [.033]

MAX.

B

2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS [INCHES].

1. DIMENSIONING & TOLERANCING PER ASME Y14.5M-1994.

4. CONFORMS TO JEDEC OUTLINE TO-254AA.

3. CONTROLLING DIMENSION: INCH.

NOT E S : PIN ASSIGNMENTS

1 = DRAIN

2 = SOURCE

3 = GATE

IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105

IR LEOMINSTER : 205 Crawford St., Leominster, Massachusetts 01453, USA Tel: (978) 534-5776

TAC Fax: (310) 252-7903

Visit us at www.irf.com for sales contact information.

Data and specifications subject to change without notice. 08/2007

BERYLLIA WARNING PER MIL-PRF-19500

Package containing beryllia shall not be ground, sandblasted, machined, or have other operations performed on them

which will produce beryllia or beryllium dust. Furthermore, beryllium oxide packages shall not be placed in acids that

will produce fumes containing beryllium.

CAUTION