PD-91332F IRHM7260 JANSR2N7433 200V, N-CHANNEL RADIATION HARDENED POWER MOSFET THRU-HOLE (T0-254AA) REF: MIL-PRF-19500/663 (R) RAD-Hard HEXFET TECHNOLOGY TM Product Summary Part Number Radiation Level IRHM7260 100K Rads (Si) IRHM3260 300K Rads (Si) IRHM4260 500K Rads (Si) IRHM8260 1000K Rads (Si) RDS(on) 0.070 0.070 0.070 0.070 ID QPL Part Number 35A* JANSR2N7433 35A* JANSF2N7433 35A* JANSG2N7433 35A* JANSH2N7433 International Rectifier's RAD-Hard TM HEXFET (R) technology provides high performance power MOSFETs for space applications. This technology has over a decade of proven performance and reliability in satellite applications. These devices have been characterized for both Total Dose and Single Event Effects (SEE). The combination of low Rdson and low gate charge reduces the power losses in switching applications such as DC to DC converters and motor control. These devices retain all of the well established advantages of MOSFETs such as voltage control, fast switching, ease of paralleling and temperature stability of electrical parameters. TO-254AA Features: n n n n n n n n Single Event Effect (SEE) Hardened Low RDS(on) Low Total Gate Charge Simple Drive Requirements Ease of Paralleling Hermetically Sealed Ceramic Package Light Weight Absolute Maximum Ratings Pre-Irradiation Parameter ID @ VGS = 12V, TC = 25C ID @ VGS = 12V, TC = 100C IDM PD @ TC = 25C VGS EAS IAR EAR dv/dt TJ T STG Continuous Drain Current Continuous Drain Current Pulsed Drain Current A Max. Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy A Avalanche Current A Repetitive Avalanche Energy A Peak Diode Recovery dv/dt A Operating Junction Storage Temperature Range Lead Temperature Weight Units 35* 25 140 250 2.0 20 500 35 25 5.7 -55 to 150 A W W/C V mJ A mJ V/ns o 300 (0.063 in.(1.6mm) from case for 10s) 9.3 (Typical) C g *Current is limited by package For footnotes refer to the last page www.irf.com 1 08/09/07 IRHM7260, JANSR2N7433 Pre-Irradiation Electrical Characteristics @ Tj = 25C (Unless Otherwise Specified) BVDSS Parameter Min Drain-to-Source Breakdown Voltage 200 -- -- V -- 0.26 -- V/C -- -- 2.0 9.0 -- -- -- -- -- -- -- -- 0.070 0.077 4.0 -- 25 250 -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- 6.8 100 -100 290 42 120 50 200 200 130 -- BV DSS /T J Temperature Coefficient of Breakdown Voltage RDS(on) Static Drain-to-Source On-State Resistance VGS(th) Gate Threshold Voltage g fs Forward Transconductance IDSS Zero Gate Voltage Drain Current IGSS IGSS Qg Q gs Q gd td(on) tr td(off) tf LS + LD Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Total Gate Charge Gate-to-Source Charge Gate-to-Drain (`Miller') Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Inductance Typ Max Units V S A nA nC ns nH Test Conditions VGS = 0V, ID = 1.0mA Reference to 25C, ID = 1.0mA VGS = 12V, ID = 25A A VGS = 12V, ID = 35A VDS = VGS, ID = 1.0mA VDS 15V, IDS = 25A A VDS= 160V ,VGS = 0V VDS = 160V, VGS = 0V, TJ = 125C VGS = 20V VGS = -20V VGS =12V, ID =35A VDS = 100V VDD = 100V, ID =35A VGS =12V, RG = 2.35 Measured from Drain lead (6mm /0.25in from package) to Source lead (6mm /0.25in. from package) with Source wires internally bonded from Source Pin to Drain Pad Ciss Coss C rss Input Capacitance Output Capacitance Reverse Transfer Capacitance -- -- -- 5300 1200 360 -- -- -- pF VGS = 0V, VDS = 25V f = 1.0MHz Source-Drain Diode Ratings and Characteristics Parameter Min Typ Max Units IS ISM VSD trr Q RR Continuous Source Current (Body Diode) Pulse Source Current (Body Diode) A Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge ton Forward Turn-On Time -- -- -- -- -- -- -- -- -- -- 35* 140 1.8 820 8.5 Test Conditions A V ns C Tj = 25C, IS = 35A, VGS = 0V A Tj = 25C, IF = 35A, di/dt 100A/s VDD 50V A Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD. *Current limited by package Thermal Resistance Parameter RthJC RthJA RthCS Junction-to-Case Junction-to-Ambient Case-to-Sink Min Typ Max Units -- -- -- -- 0.50 -- 48 0.21 -- C/W Test Conditions Typical socket mount Note: Corresponding Spice and Saber models are available on the International Rectifier Website. For footnotes refer to the last page 2 www.irf.com Radiation Characteristics Pre-Irradiation IRHM7260, JANSR2N7433 International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability. The hardness assurance program at International Rectifier is comprised of two radiation environments. Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both pre- and post-irradiation performance are tested and specified using the same drive circuitry and test conditions in order to provide a direct comparison. Table 1. Electrical Characteristics @ Tj = 25C, Post Total Dose Irradiation AA Parameter BVDSS VGS(th) IGSS IGSS IDSS RDS(on) VSD 100 K Rads(Si)1 Min Drain-to-Source Breakdown Voltage Gate Threshold Voltage Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Zero Gate Voltage Drain Current Static Drain-to-Source A On-State Resistance (TO-3) A Diode Forward Voltage 200 2.0 -- -- -- -- -- Max 300K-1000K Rads (Si)2 Min Units Max -- 4.0 100 -100 25 0.070 200 1.25 -- -- -- -- -- 4.5 100 -100 25 0.11 1.8 -- 1.8 Test Conditions A VGS = 0V, ID = 1.0mA VGS = VDS, ID = 1.0mA VGS = 20V VGS = -20 V VDS = 160V, VGS = 0V VGS = 12V, ID = 25A V VGS = 0V, IS = 35A V nA 1. Part number IRHM7260 (JANSR2N7433) 2. Part numbers IRHM3260 (JANSF2N7433), IRHM4260 (JANSG2N7432) and IRHM8260 (JANSH2N7433) International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2. Table 2. Single Event Effect Safe Operating Area Ion Cu Br LET (MeV/(mg/cm2)) 28 36.8 Energy (MeV) 285 305 Range (m) 43 39 VDS(V) @VGS=0V @VGS=-5V @VGS=-10V @VGS=-15V @VGS=-20V 190 180 170 125 -- 100 100 100 50 -- 200 VDS 150 Cu 100 Br 50 0 0 -5 -10 -15 -20 VGS Fig a. Single Event Effect, Safe Operating Area For footnotes refer to the last page www.irf.com 3 IRHM7260, JANSR2N7433 1000 Pre-Irradiation 1000 VGS 15V 12V 10V 9.0V 8.0V 7.0V 6.0V BOTTOM 5.0V VGS 15V 12V 10V 9.0V 8.0V 7.0V 6.0V BOTTOM 5.0V TOP I D , Drain-to-Source Current (A) I D , Drain-to-Source Current (A) TOP 100 10 5.0V 20s PULSE WIDTH TJ = 25 C 5.0V 1 10 100 100 10 VDS , Drain-to-Source Voltage (V) 2.5 TJ = 150 C V DS = 50V 20s PULSE WIDTH 6 7 8 9 10 11 VGS , Gate-to-Source Voltage (V) Fig 3. Typical Transfer Characteristics 4 RDS(on) , Drain-to-Source On Resistance (Normalized) I D , Drain-to-Source Current (A) TJ = 25 C 5 100 Fig 2. Typical Output Characteristics 1000 100 10 VDS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics 10 1 20s PULSE WIDTH TJ = 150 C 12 40A ID = 35A 2.0 1.5 1.0 0.5 0.0 -60 -40 -20 VGS = 12V 0 20 40 60 80 100 120 140 160 TJ , Junction Temperature ( C) Fig 4. Normalized On-Resistance Vs. Temperature www.irf.com Pre-Irradiation 10000 20 VGS , Gate-to-Source Voltage (V) VGS = 0V, f = 1MHz Ciss = Cgs + Cgd , Cds SHORTED Crss = Cgd Coss = Cds + Cgd 8000 C, Capacitance (pF) IRHM7260, JANSR2N7433 Ciss 6000 4000 Coss 2000 Crss 0 1 10 ID = 35A 16 12 8 4 FOR TEST CIRCUIT SEE FIGURE 13 0 100 0 40 VDS , Drain-to-Source Voltage (V) 80 120 160 200 240 QG , Total Gate Charge (nC) Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage 1000 1000 ID, Drain-to-Source Current (A) ISD , Reverse Drain Current (A) VDS = 160V VDS = 100V VDS = 40V 100 OPERATION IN THIS AREA LIMITED BY R DS(on) 100 TJ = 150 C 10 TJ = 25 C 1 0.1 0.0 V GS = 0 V 0.5 1.0 1.5 2.0 2.5 3.0 VSD ,Source-to-Drain Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage www.irf.com 3.5 100s 1ms 10 10ms Tc = 25C Tj = 150C Single Pulse 1 1 10 100 1000 VDS , Drain-to-Source Voltage (V) Fig 8. Maximum Safe Operating Area 5 IRHM7260, JANSR2N7433 Pre-Irradiation 50 LIMITED BY PACKAGE V GS 40 ID , Drain Current (A) RD VDS D.U.T. RG 30 + - VDD VGS Pulse Width 1 s Duty Factor 0.1 % 20 Fig 10a. Switching Time Test Circuit 10 VDS 90% 0 25 50 75 100 125 150 TC , Case Temperature ( C) 10% VGS Fig 9. Maximum Drain Current Vs. Case Temperature td(on) tr t d(off) tf Fig 10b. Switching Time Waveforms Thermal Response (Z thJC ) 1 0.50 0.1 0.01 0.20 0.10 0.05 0.02 0.01 0.001 0.00001 PDM SINGLE PULSE (THERMAL RESPONSE) t1 t2 Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJC + TC 0.0001 0.001 0.01 0.1 1 10 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case 6 www.irf.com Pre-Irradiation IRHM7260, JANSR2N7433 EAS , Single Pulse Avalanche Energy (mJ) 1400 TOP 1200 15V BOTTOM ID 16A 22A 35A 1000 L VDS D.U.T RG VGS 20V IAS DRIVER + - VDD 0.01 tp Fig 12a. Unclamped Inductive Test Circuit V(BR)DSS A 800 600 400 200 0 25 50 75 100 125 Starting TJ , Junction Temperature ( C) 150 tp Fig 12c. Maximum Avalanche Energy Vs. Drain Current I AS Current Regulator Same Type as D.U.T. Fig 12b. Unclamped Inductive Waveforms 50K QG 12 V QGS .2F .3F D.U.T. QGD + V - DS VGS VG 3mA Charge Fig 13a. Basic Gate Charge Waveform www.irf.com 12V IG ID Current Sampling Resistors Fig 13b. Gate Charge Test Circuit 7 IRHM7260, JANSR2N7433 Pre-Irradiation Foot Notes: A Pulse width 300 s; Duty Cycle 2% A Total Dose Irradiation with VGS Bias. A Repetitive Rating; Pulse width limited by maximum junction temperature. 12 volt VGS applied and VDS = 0 during irradiation per MIL-STD-750, method 1019, condition A. A Total Dose Irradiation with V DS Bias. 160 volt VDS applied and VGS = 0 during irradiation per MlL-STD-750, method 1019, condition A. A VDD = 50V, starting TJ = 25C, L=0.82mH Peak IL = 35A, VGS =12V A ISD 35A, di/dt 410A/s, VDD 200V, TJ 150C Case Outline and Dimensions -- TO-254AA 0.12 [.005] 13.84 [.545] 13.59 [.535] 3.78 [.149] 3.53 [.139] 6.60 [.260] 6.32 [.249] A 20.32 [.800] 20.07 [.790] 17.40 [.685] 16.89 [.665] 1 C 2 2X 14.48 [.570] 12.95 [.510] 0.84 [.033] MAX. 1.14 [.045] 0.89 [.035] 0.36 [.014] 3.81 [.150] B A NOT ES : 1. 2. 3. 4. B 3 3X 3.81 [.150] 13.84 [.545] 13.59 [.535] 1.27 [.050] 1.02 [.040] DIMENSIONING & TOLERANCING PER ASME Y14.5M-1994. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS [INCHES]. CONTROLLING DIMENSION: INCH. CONFORMS TO JEDEC OUTLINE TO-254AA. PIN ASSIGNMENTS 1 = DRAIN 2 = SOURCE 3 = GATE CAUTION BERYLLIA WARNING PER MIL-PRF-19500 Package containing beryllia shall not be ground, sandblasted, machined, or have other operations performed on them which will produce beryllia or beryllium dust. Furthermore, beryllium oxide packages shall not be placed in acids that will produce fumes containing beryllium. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 IR LEOMINSTER : 205 Crawford St., Leominster, Massachusetts 01453, USA Tel: (978) 534-5776 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. Data and specifications subject to change without notice. 08/2007 8 www.irf.com