2SB1120F-TD-E - ON SEMICONDUCTOR

2SB1120

No.1786-1/4

Applications

•Strobes, voltage regulators, relay drivers, lamp drivers.

Features

•Low collector-to-emitter saturation voltage :VCE(sat)max= –0.45V.

•Large current capacity : IC= –2.5A, ICP= –5A.

•Ultrasmall size making it easy to provide high-density, small-sized hybrid IC’s.

Specifications

Absolute Maximum Ratings at Ta=25°C

Parameter Symbol Conditions Ratings Unit

Collector-to-Base Voltage VCBO --20 V

Collector-to-Emitter Voltage VCEO --10 V

Emitter-to-Base Voltage VEBO --7 V

Collector Current IC--2.5 A

Collector Current (Pulse) ICP --5 A

Collector Dissipation PC500 mW

Mounted on a ceramic board (250mm

✕0.8mm)

1.3 W

Junction Temperature Tj 150 °C

Storage Temperature Tstg --55 to +150 °C

Electrical Characteristics at Ta=25°C

Ratings

Parameter Symbol Conditions min typ max Unit

Collector Cutoff Current ICBO VCB=--16V, IE=0A --100 nA

Emitter Cutoff Current IEBO VEB=--4V, IC=0A --100 nA

Marking : BC Continued on next page.

www.semiconductor-sanyo.com/network

Ordering number : EN1786B

31010EA TK IM / O1003TN (KOTO)/92098HA (KT)/4107KI/2135MW, TS

Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate

the performance, characteristics, and functions of the described products in the independent state, and are not

guarantees of the performance, characteristics, and functions of the described products as mounted in the

customer

s products or equipment. To verify symptoms and states that cannot be evaluated in an independent

device, the customer should always evaluate and test devices mounted in the customer

s products or

equipment.

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"standard application", intended for the use as general electronics equipment (home appliances, AV equipment,

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SANYO Semiconductors

DATA SHEET

2SB1120 PNP Epitaxial Planar Silicon Transistor

High-Current Driver Applications

2SB1120

No.1786-2/4

Continued from preceding page. Ratings

Parameter Symbol Conditions min typ max Unit

DC Current Gain hFE1V

CE=--2V, IC=--500mA 100* 560*

hFE2V

CE=--2V, IC=--3A 70

Gain-Bandwidth Product fTVCE=--10V, IC=--50mA 250 MHz

Collector-to-Emitter Saturation Voltage VCE(sat) IC=--1.5A, IB=--0.15A --0.25 --0.45 V

Collector-to-Base Breakdown Voltage V(BR)CBO IC=--10μA, IE=0A --20 V

Collector-to-Emitter Breakdown Voltage V(BR)CEO IC=--1mA, RBE=∞--10 V

Emitter-to-Base Breakdown Voltage V(BR)EBO IE=--10μA, IC=0A --7 V

Output Capacitance Cob VCB=--10V, f=1MHz 70 pF

*: The 2SB1120 is classified by 500mA hFE as follows:

Rank E F G

hFE 100 to 200 160 to 320 280 to 560

Package Dimensions

unit : mm (typ)

7007B-004

IC -- VCE

Collector Current, IC -- A

Collector-to-Emitter Voltage, VCE -- V

IC -- VCE

Collector Current, IC -- A

Collector-to-Emitter Voltage, VCE -- V

--5

--4

--3

--2

--1

00 --0.2 --0.4 --0.6 --0.8 --1.2--1.0

IB=0mA

ITR08859

--2mA

--5mA

--30mA

--40mA

--50mA

--60mA

--10mA

--15mA

--20mA

--80mA

--100mA

--150mA

--5

--4

--3

--2

--1

00 --1 --2 --3 --4 --6--5

IB=0mA

ITR08860

--2mA --1mA

--5mA

--25mA

--30mA

--40mA

--50mA

--60mA

--100mA

--10mA

--15mA

--20mA

2SB1120

No.1786-3/4

PC -- Ta

A S O

Collector-to-Emitter Voltage, VCE -- V

Collector Current, IC -- A

Ambient Temperature, Ta -- °C

Collector Dissipation, PC -- W

VCE(sat) -- IC

Collector Current, IC -- A

Collector-to-Emitter

Saturation Voltage, VCE(sat) -- mV

IC -- VBE

Base-to-Emitter Voltage, VBE -- V

Collector Current, IC -- A

hFE -- IC

Collector Current, IC -- A

DC Current Gain, hFE

fT -- IC

Collector Current, IC -- A

Gain-Brandwidth Product, fT -- MHz

Cob -- VCB

Collector-to-Base Voltage, VCB -- V

Output Capacitance, Cob -- pF

--0.1

--1.0

--10

--1.0 --10

57 2 573323

ITR08867

100ms

10ms

1ms

ICP= --5A

Ta=25°C

Single pulse

Mounted on a ceramic board (250mm

✕0.8mm)

DC operation

1.6

1.4

1.2

0.8

1.0

0.6

0.4

0.2

0 20 40 60 100 120 16014080

ITR08866

Mounted on a ceramic board (250mm

✕0.8mm)

No heat sink

0 --0.2 --0.4 --0.6 --0.8 --1.2--1.0

--3.2

--2.8

--2.4

--2.0

--1.6

--1.2

--0.8

--0.4

ITR08861

100

1000

23 5

--0.01 23 5

--0.1 --1.0 23 5 --10

23 5

--10 23 5

--100 77 --1000

ITR08862

1000

100

ITR08863

VCE= --2V

VCB= --10V

VCE= --2V

--1000

--100

--10

--10000

23 523 5 --0.1--0.01 23 5

--1.0 --10

ITR08865

100

--1.0 --10

2735 23

ITR08864

IC / IB=10

f=1MHz

IC= --2.5A

2SB1120

No.1786-4/4

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