SPICE MODELS: MMBTA13 MMBTA14 MMBTA13 / MMBTA14 NPN SURFACE MOUNT DARLINGTON TRANSISTOR Features * * * * * Epitaxial Planar Die Construction Complementary PNP Types Available (MMBTA63 /MMBTA64) SOT-23 Ideal for Medium Power Amplification and Switching A High Current Gain B Mechanical Data TOP VIEW B Case: SOT-23 0.37 0.51 B 1.20 1.40 C 2.30 2.50 D 0.89 1.03 E 0.45 0.60 G 1.78 2.05 H 2.80 3.00 J 0.013 0.10 K 0.903 1.10 C E G H Moisture Sensitivity: Level 1 per J-STD-020C K Terminal Connections: See Diagram M J Terminals: Solderable per MIL-STD-202, Method 208 L C Also Available in Lead Free Plating (Matte Tin Finish annealed over Alloy 42 leadframe). Please see Ordering Information, Note 5, on Page 2 * * * * Max D E Case Material: Molded Plastic. UL Flammability Classification Rating 94V-0 * * * * Min A C Available in Lead Free/RoHS Compliant Version (Note 3) * * Dim MMBTA13 Marking (See Page 2): K2D, K3D E B MMBTA14 Marking (See Page 2): K3D L 0.45 0.61 M 0.085 0.180 a 0 8 All Dimensions in mm Ordering & Date Code Information: See Page 2 Weight: 0.008 grams (approximate) Maximum Ratings @ TA = 25C unless otherwise specified Characteristic Symbol MMBTA13 MMBTA14 Unit Collector-Base Voltage VCBO 30 V Collector-Emitter Voltage VCEO 30 V Emitter-Base Voltage VEBO 10 V IC 300 mA Collector Current - Continuous (Note 1) Pd 300 mW RqJA 417 CW Tj, TSTG -55 to +150 C Power Dissipation (Note 1) Thermal Resistance, Junction to Ambient (Note 1) Operating and Storage and Temperature Range Electrical Characteristics @ TA = 25C unless otherwise specified Characteristic Symbol Min Max Unit Test Condition V(BR)CEO 30 3/4 V IC = 100mA VBE = 0V Collector Cutoff Current ICBO 3/4 100 nA VCB = 30V, IE = 0 Emitter Cutoff Current IEBO 3/4 100 nA VEB = 10V, IC = 0 hFE 5,000 10,000 10,000 20,000 3/4 3/4 IC = 10mA, VCE = 5.0V IC = 10mA, VCE = 5.0V IC = 100mA, VCE = 5.0V IC = 100mA, VCE = 5.0V Collector-Emitter Saturation Voltage VCE(SAT) 3/4 1.5 V IC = 100mA, IB = 100mA Base-Emitter Saturation Voltage VBE(SAT) 3/4 2.0 V IC = 100mA, VCE = 5.0V VCB = 10V, f = 1.0MHz, IE = 0 OFF CHARACTERISTICS (Note 2) Collector-Emitter Breakdown Voltage ON CHARACTERISTICS (Note 2) DC Current Gain MMBTA13 MMBTA14 MMBTA13 MMBTA14 SMALL SIGNAL CHARACTERISTICS Output Capacitance Cobo 8.0 Typical pF Input Capacitance Cibo 15 Typical pF Current Gain-Bandwidth Product Note: fT 125 3/4 MHz VEB = 0.5V, f = 1.0MHz, IC = 0 VCE = 5.0V, IC = 10mA, f = 100MHz 1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf. 2. Short duration test pulse used to minimize self-heating effect. 3. No purposefully added lead. DS30047 Rev. 7 - 2 1 of 3 www.diodes.com MMBTA13 / MMBTA14 a Diodes Incorporated Ordering Information Notes: (Note 4) Device Packaging Shipping MMBTA13-7 MMBTA14-7 SOT-23 3000/Tape & Reel 4. For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf. 5. For Lead Free/RoHS Compliant version part numbers, please add "-F" suffix to the part numbers above. Example: MMBTA14-7-F. Marking Information YM KxD = Product Type Marking Code, ex: K2D = MMBTA13 YM = Date Code Marking Y = Year ex: N = 2002 M = Month ex: 9 = September KxD Date Code Key 1998 1999 2000 2001 2002 2003 2004 2005 2006 2007 2008 2009 J K L M N P R S T U V W Month Jan Feb March Apr May Jun Jul Aug Sep Oct Nov Dec Code 1 2 3 4 5 6 7 8 9 O N D VCE(SAT), COLLECTOR TO EMITTER SATURATION VOLTAGE (V) Year Code PD, POWER DISSIPATION (mW) 350 300 250 200 150 100 50 0 0 25 50 75 100 125 150 175 1.10 1.05 1.00 0.95 0.90 0.85 0.80 0.75 0.70 0.65 0.60 0.55 0.50 0.45 0.40 200 TA = -50C TA = 25C TA = 150C 1 10 100 1000 IC, COLLECTOR CURRENT (mA) Fig. 2, Collector Emitter Saturation Voltage vs. Collector Current TA, AMBIENT TEMPERATURE (C) Fig. 1, Max Power Dissipation vs Ambient Temperature DS30047 Rev. 7 - 2 IC IB = 1000 2 of 3 www.diodes.com MMBTA13 / MMBTA14 1000000 VBE(ON), BASE EMITTER VOLTAGE (V) hFE, DC CURRENT GAIN (NORMALIZED) VCE = 5V TA = 150C 100000 10000 TA = -50C TA = 25C 1000 100 10 1 100 1.6 1.5 1.4 1.3 1.2 1.1 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 1000 VCE = 5V TA = -50C TA = 25C TA = 150C 0.1 1 10 100 IC, COLLECTOR CURRENT (mA) Fig. 4, Base Emitter Voltage vs. Collector Current IC, COLLECTOR CURRENT (mA) Fig. 3, DC Current Gain vs Collector Current 1000 fT, GAIN BANDWIDTH PRODUCT (MHz) VCE = 5V 100 10 1 1 10 100 IC, COLLECTOR CURRENT (mA) Fig. 5, Gain Bandwidth Product vs Collector Current DS30047 Rev. 7 - 2 3 of 3 www.diodes.com MMBTA13 / MMBTA14