2N5070 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI 2N5070 is Designed for High PACKAGE STYLE TO- 60 Power Linear Amplifier Application in the 2.0 to 75 MHz Range. FEATURES INCLUDE: * Emitter Ballasted * Common Emitter Package MAXIMUM RATINGS IC 3.3 A 10 A (PEAK) VCE 30 V PDISS 70 W @ TC = 25 C TSTG -65 C to +200 C JC 2.5 C/W O O O 1 = EMITTER 3 = COLLECTOR O CHARACTERISTICS O TC = 25 C SYMBOL TEST CONDITIONS BVCEO IC = 200 mA BVCER IC = 200 mA ICEO VCE = 30 V ICEV VCE = 60 V VCE = 60 V ICBO IEBO hFE 2 = BASE CASE = EMITTER MINIMUM TYPICAL MAXIMUM RBE = 5.0 UNITS 30 V 40 V 5.0 mA 10 10 mA VCB = 60 V 10 mA VEB = 4.0 V 10 mA 100 100 --- 85 pF VCE = 5.0 V Cob VCB = 30 V ft VCE = 15 V Pin IMD VCE = 28 V f1 = 30 MHz VBE = -1.5 V VBE = -1.5 V O TC = 150 C 10 10 IC = 1.0 A IC = 3.0 A f = 1.0 MHz IC = 1.0 A Pout = 25 W (PEP) f2 = 30.001 MHz f = 50 MHz 100 Zg = 50 40 MHz 1.25 A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE * NORTH HOLLYWOOD, CA 91605 * (818) 982-1200 * FAX (818) 765-3004 Specifications are subject to change without notice. -30 W % dB REV. A 1/1