A D V A N C E D S E M I C O N D U C T O R, I N C. REV. A
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 1/1
S
p
ecifi cations are sub
j
ect to chan
g
e without notice.
CHARACTERISTICS TC = 25 OC
SYMBOL TEST CONDITIONS MINI MUM TYPICAL MAXIMUM UNITS
BVCEO IC = 200 mA 30 V
BVCER IC = 200 mA RBE = 5.0 Ω40 V
ICEO VCE = 30 V 5.0 mA
ICEV VCE = 60 V VBE = -1.5 V
VCE = 60 V VBE = -1.5 V TC = 150 OC10
10 mA
ICBO VCB = 60 V 10 mA
IEBO VEB = 4.0 V 10 mA
hFE VCE = 5.0 V IC = 1.0 A
IC = 3.0 A 10
10 100
100 ---
Cob VCB = 30 V f = 1.0 MHz 85 pF
ftVCE = 15 V IC = 1.0 A f = 50 MHz 100 MHz
Pin
η
ηη
η
IMD
VCE = 28 V Pout = 25 W(PEP) Zg = 50 Ω
f1 = 30 MHz f2 = 30.001 MHz 40 1.25
-30
W
%
dB
NPN SILICON RF POWER TRANSISTOR
2N5070
DESCRIPTION:
The ASI 2N5070 is Designed for High
Power Linear Amplif ier Application in the
2.0 to 75 MHz Range.
FEATURES INCLUDE:
• Emitter Ballasted
• Common Emitter Packag e
MAXIMUM RATINGS
IC3.3 A
10 A (PEAK)
VCE 30 V
PDISS 70 W @ TC = 25 OC
TSTG -65 OC to +200 OC
θ
θθ
θJC 2.5 OC/W
PACKAGE STYLE TO- 60
1 = EMITTER 2 = BASE
3 = COLLECTOR CASE = E MITTE R
