ASI1010 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE .250 2L FLG The ASI 1010 is Designed for General Purpose Class C Power Amplifier Applications up to 1500 MHz. A OD B .060 x 45 CHAMFER C E FEATURES: G * PG = 12 dB min. at 10 W/ 1,000 MHz * Hermetic Microstrip Package * OmnigoldTM Metalization System L 1.0 A VCC 35 V MINIMUM inches / mm inches / mm A .028 / 0.71 .032 / 0.81 B .740 / 18.80 C .245 / 6.22 D .128 / 3.25 29 W @ TC = 25 C -65 OC to +200 OC TSTG -65 OC to +200 OC JC 8.5 OC/W CHARACTERISTICS SYMBOL .117 / 2.97 .117 / 2.97 H .560 / 14.22 .570 / 14.48 I .790 / 20.07 .810 / 20.57 J .225 / 5.72 .235 / 5.97 K .165 / 4.19 .185 / 4.70 L .003 / 0.08 .007 / 0.18 M .058 / 1.47 .068 / 1.73 N .119 / 3.02 .135 / 3.43 P .149 / 3.78 .187 / 4.75 ORDER CODE: ASI10525 O NONETEST CONDITIONS IC = 1.0 mA BVCER IC = 10 mA BVEBO IE = 1.0 mA ICBO VCB = 28 V hFE VCE = 5.0 V Cob VCB = 28 V C .132 / 3.35 TC = 25 C BVCBO PG .255 / 6.48 .110 / 2.79 G O MAXIMUM .125 / 3.18 E TJ I K DIM F PDISS J P MN MAXIMUM RATINGS IC F H VCC = 28 V RBE = 10 IC = 500 mA MINIMUM TYPICAL MAXIMUM 45 V 45 V 3.5 V 15 f = 1.0 MHz POUT = 10 W f = 1.0 GHz UNITS 2.5 mA 120 --- 10 pF 12 dB 50 % A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE * NORTH HOLLYWOOD, CA 91605 * (818) 982-1200 * FAX (818) 765-3004 Specifications are subject to change without notice. REV. A 1/1