330A
PHASE CONTROL THYRISTORS Stud Version
ST330S SERIES
Bulletin I25156/B
Features
Center amplifying gate
Hermetic metal case with ceramic insulator
International standard case TO-209AE (TO-118)
Threaded studs UNF 3/4 - 16UNF2A or ISO M24x1.5
Compression Bonded Encapsulation for heavy duty
operations such as severe thermal cycling
Typical Applications
DC motor controls
Controlled DC power supplies
AC controllers
IT(AV) 330 A
@ TC75 °C
IT(RMS) 520 A
ITSM @ 50Hz 9000 A
@ 60Hz 9420 A
I2t@ 50Hz 405 KA2s
@ 60Hz 370 KA2s
VDRM/VRRM 400 to 1600 V
tqtypical 100 µs
TJ- 40 to 125 °C
Parameters ST330S Units
Major Ratings and Characteristics
case style
TO-209AE (TO-118)
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ELECTRICAL SPECIFICATIONS
Voltage Ratings
Voltage VDRM/VRRM, max. repetitive VRSM , maximum non- IDRM/IRRM max.
Type number Code peak and off-state voltage repetitive peak voltage @ TJ = TJ max
V V mA
04 400 500
08 800 900
ST330S 12 1200 1300 50
14 1400 1500
16 1600 1700
IT(AV) Max. average on-state current 330 A180° conduction, half sine wave
@ Case temperature 75 °C
IT(RMS) Max. RMS on-state current 520 ADC @ 62°C case temperature
ITSM Max. peak, one-cycle 9000 t = 10ms No voltage
non-repetitive surge current 9420 t = 8.3ms reapplied
7570 t = 10ms100% VRRM
7920 t = 8.3ms reapplied Sinusoidal half wave,
I2tMaximum I2t for fusing 405 t = 10ms No voltage Initial TJ = TJ max.
370 t = 8.3ms reapplied
287 t = 10ms 100% VRRM
262 t = 8.3ms reapplied
I2√tMaximum I2√t for fusing 4050 KA2√st = 0.1 to 10ms, no voltage reapplied
VT(TO)1 Low level value of threshold
voltage
VT(TO)2 High level value of threshold
voltage
rt1Low level value of on-state
slope resistance
rt2High level value of on-state
slope resistance
VTM Max. on-state voltage 1.51 VIpk= 1040A, TJ = TJ max, tp = 10ms sine pulse
IHMaximum holding current 600
ILTypical latching current 1000
0.91 (16.7% x π x IT(AV) < I < π x IT(AV)), TJ = TJ max.
0.58 (16.7% x π x IT(AV) < I < π x IT(AV)), TJ = TJ max.
0.57 (I > π x IT(AV)),TJ = TJ max.
Parameter ST330S Units Conditions
0.92 (I > π x IT(AV)),TJ = TJ max.
On-state Conduction
KA2s
V
mΩ
mA TJ = 25°C, anode supply 12V resistive load
A
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Parameter ST330S Units Conditions
Switching
tqTypical turn-off time 100
tdTypical delay time 1.0
di/dt Max. non-repetitive rate of rise Gate drive 20V, 20Ω, tr ≤ 1µs
of turned-on current TJ = TJ max, anode voltage ≤ 80% VDRM
Gate current A, dig/dt = 1A/µs
Vd = 0.67% VDRM, TJ = 25°C
ITM = 550A, TJ = TJ max, di/dt = 40A/µs, VR = 50V
dv/dt = 20V/µs, Gate 0V 100Ω, tp = 500µs
1000 A/µs
µs
dv/dt Maximum critical rate of rise of
off-state voltage
IRRM Max. peak reverse and off-state
IDRM leakage current
Blocking
500 V/µs TJ = TJ max. linear to 80% rated VDRM
Parameter ST330S Units Conditions
50 mA TJ = TJ max, rated VDRM/VRRM applied
PGM Maximum peak gate power 10.0 TJ = TJ max, tp ≤ 5ms
PG(AV) Maximum average gate power 2.0 TJ = TJ max, f = 50Hz, d% = 50
IGM Max. peak positive gate current 3.0 ATJ = TJ max, tp ≤ 5ms
+VGM Maximum peak positive
gate voltage
-VGM Maximum peak negative
gate voltage
IGT DC gate current required TJ = - 40°C
to trigger mA TJ = 25°C
TJ = 125°C
VGTDC gate voltage required TJ = - 40°C
to trigger VTJ = 25°C
TJ = 125°C
IGD DC gate current not to trigger 10 mA
Parameter ST330S Units Conditions
20
5.0
Triggering
VGD DC gate voltage not to trigger 0.25 VTJ = TJ max
TYP. MAX.
200 -
100 200
50 -
2.5 -
1.8 3.0
1.1 -Max. gate current/ voltage not to
trigger is the max. value which
will not trigger any unit with rated
VDRM anode-to-cathode applied
Max. required gate trigger/ cur-
rent/ voltage are the lowest value
which will trigger all units 12V
anode-to-cathode applied
W
VTJ = TJ max, tp ≤ 5ms
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ST330S Series
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Ordering Information Table
1-Thyristor
2-Essential part number
3-0 = Converter grade
4-S = Compression bonding Stud
5-Voltage code: Code x 100 = VRRM (See Voltage Rating Table)
6-P = Stud base 16UNF threads
M = Stud base metric threads (M24 x 1.5)
7-0 = Eyelet terminals (Gate and Auxiliary Cathode Leads)
1 = Fast - on terminals (Gate and Auxiliary Cathode Leads)
3 = Threaded top terminal 3/8" 24UNF-2A
8-Critical dv/dt: None = 500V/µsec (Standard selection)
L= 1000V/µsec (Special selection)
Device Code
51 2 34
ST 33 0 S16 P0
7
68
TJMax. operating temperature range -40 to 125
Tstg Max. storage temperature range -40 to 150
RthJC Max. thermal resistance,
junction to case
RthCS Max. thermal resistance,
case to heatsink
TMounting torque, ± 10% 48.5
(425)
wt Approximate weight 535 g
Case style TO - 209AE (TO-118) See Outline Table
Parameter ST330S Units Conditions
0.10 DC operation
0.03 Mounting surface, smooth, flat and greased
Thermal and Mechanical Specification
°C
K/W
Non lubricated threads
Nm
(lbf-in)
∆RthJC Conduction
(The following table shows the increment of thermal resistence RthJC when devices operate at different conduction angles than DC)
180° 0.011 0.008 TJ = TJ max.
120°0.013 0.014
90°0.017 0.018 K/W
60°0.025 0.026
30° 0.041 0.041
Conduction angle Sinusoidal conduction Rectangular conduction Units Conditions
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Fast-on Terminals
Case Style TO-209AE (TO-118)
All dimensions in millimeters (inches)
Outline Table
Case Style TO-209AE (TO-118)
with top thread terminal 3/8"
All dimensions in millimeters (inches)
RED CATHODE
RED SILICON RUBBER
10.5 (0.41)
245 (9.65) ± 10 (0.3 9)
WHITE GATE
4.3 (0.17) DIA.
CERAMIC HOUSING
WHITE SHRINK
NOM.
47 (1.85)
MAX.
245 (9.6 5)
38 (1.50)
MAX. DIA.
* FOR METRIC DEVICE: M24 X 1.5 - LENGHT SCREW 21 (0.83) MAX.
22 (0.87) MAX.
MAX.
21 (0.82) MAX .
SW 45
2
FLEXIBLE LEAD
4.5 (0.18) MAX.
C.S. 50mm
(0.078 s.i.)
255 (10.04)
RED SHRINK
22 (0.86) MIN.
49 (1.92) MAX.
3/4"16 UNF-2A
27.5 (1.08)
9.5 (0.37) MIN.
47 (1.85)
27.5 (1.08) 77.5 (3.05)
80.5 (3.17)
38 (1.5)
DIA. MAX.
MAX.
M AX.
MAX.
CERAMIC HOUSING
SW 45
* FOR METRIC DEVICE: M24 x 1.5 - LENGHT SCREW 21 (0.83) MAX.
21 (0.83)
3/4"-16UNF-2A *
25 (0.98)
3/8"-24UNF-2A
17 (0.67) DIA.
AMP. 280000-1
REF-250
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