2N4398 & 2N4399 Silicon PNP Transistor High Power Description: The 2N4398 and 2N4399 are silicon PNP high power transistors in a TO3 type package designed for use in power amplifier and switching circuits. Features: D Low Collector-Emitter Saturation Voltage: IC = 15A, VCE(sat) = 1.0V Max D DC Current Gain Specified: 1.0 o 30A Absolute Maximum Ratings: Collector-Emitter Voltage, VCEO 2N4398 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40V 2N4399 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60V Collector-Base Voltage, VCB 2N4398 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40V 2N4399 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60V Emitter-Base Voltage, VEB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5.0V Collector Current, IC Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30A Peak . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50A Base Current, IB Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7.5A Peak . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15A Total Power Dissipation, PD TA = +25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5W Derate Above +25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 28.8W/C TC = +25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200W Derate Above +25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.15W/C Operating Junction Temperature Range, Tj . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -65 to +200C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -65 to +200C Thermal Resistance, Junction-to-Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.875C/W Thermal Resistance, Junction-to-Ambient, RthJA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 35C/W Electrical Characteristics: (TC = +25C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit Off Characteristics Collector-Emitter Sustaining Voltage 2N4398 VCEO(SUS) IC = 200mA, IB = 0, Note 1 2N4399 Collector Cutoff Current Emitter Cutoff Current 40 - - V 60 - - V ICEO VCE = Rated Value, VBE(OFF) = 1.5V - - 5 mA ICEX VCE = 30V, VBE(OFF) = 1.5V - - 5 mA - - 10 mA TC = +150C ICBO VCE = Rated Value, IE = 0 - - 1 mA IEBO VEB = 5V, Ic = 0 - - 5 mA Note 1. Pulse Test: Pulse Width 300s, Duty Cycle 2%. Electrical Characteristics (Cont'd): (TC = +25C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit On Characteristics (Note 1) DC Current Gain hFE Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage VCE(sat) VBE(sat) Base-Emitter ON Voltage VBE(on) VCE = 2V IC = 1A 40 - - IC = 15A 15 - 60 IC = 30A 5 - - IC = 10A, IB = 1A - - 0.75 V IC = 15A, IB = 1.5A - - 1.0 V IC = 20A, IB = 2A - - 2.0 V IC = 30A, IB = 6A - - 4.0 V IC = 10A, IB = 1A - - 1.6 V IC = 15A, IB = 1.5A - - 1.85 V IC = 20A, IB = 2A - - 2.5 V IC = 15A, VCE = 2V - - 1.7 V IC = 30A, VCE = 4V - - 3.0 V MHz Dynamic Characteristics Current Gain Bandwidth Product fT IC = 1A, VCE = 10V, f = 1MHz 4 - - Small-Signal Current Gain hfe IC = 1A, VCE = 10V, f = 1MHz 40 - - VCC = 30V, IC = 10A, IB1 = IB2 = 1A Switching Characteristics Rise Time tr - - 0.4 us Storage Time ts - - 1.5 us Fall Time tf - - 0.6 us Note 1. Pulse Test: Pulse Width 300s, Duty Cycle 2%. .135 (3.45) Max .350 (8.89) .875 (22.2) Dia Max Seating Plane .312 (7.93) Min Emitter .040 (1.02) 1.187 (30.16) .215 (5.45) .665 (16.9) .156 (3.96) Dia (2 Holes) .430 (10.92) .188 (4.8) R Max Base .525 (13.35) R Max Collector/Case