2N4398 & 2N4399
Silicon PNP Transistor
High Power
Description:
The 2N4398 and 2N4399 are silicon PNP high power transistors in a TO3 type package designed
for use in power amplifier and switching circuits.
Features:
DLow Collector−Emitter Saturation Voltage: IC = 15A, VCE(sat) = 1.0V Max
DDC Current Gain Specified: 1.0 o 30A
Absolute Maximum Ratings:
Collector−Emitter Voltage, VCEO
2N4398 40V.....................................................................
2N4399 60V.....................................................................
Collector−Base Voltage, VCB
2N4398 40V.....................................................................
2N4399 60V.....................................................................
Emitter−Base Voltage, VEB 5.0V.........................................................
Collector Current, IC
Continuous 30A..................................................................
Peak 50A.......................................................................
Base Current, IB
Continuous 7.5A.................................................................
Peak 15A.......................................................................
Total Power Dissipation, PD
TA = +25°C 5W..................................................................
Derate Above +25°C 28.8W/°C..................................................
TC = +25°C 200W................................................................
Derate Above +25°C 1.15W/°C..................................................
Operating Junction Temperature Range, Tj−65° to +200°C..................................
Storage Temperature Range, Tstg −65° to +200°C..........................................
Thermal Resistance, Junction−to−Case, RthJC 0.875°C/W...................................
Thermal Resistance, Junction−to−Ambient, RthJA 35°C/W....................................
Electrical Characteristics: (TC = +25°C unless otherwise specified)
Parameter Symbol Test Conditions Min Typ Max Unit
Off Characteristics
Collector−Emitter Sustaining Voltage
2N4398 VCEO(SUS) IC = 200mA, IB = 0, Note 1 40 − − V
2N4399 60 − − V
Collector Cutoff Current ICEO VCE = Rated Value, VBE(OFF) = 1.5V − − 5 mA
ICEX VCE = 30V,
VBE(OFF) = 1.5V
− − 5 mA
TC = +150°C− − 10 mA
ICBO VCE = Rated Value, IE = 0 − − 1 mA
Emitter Cutoff Current IEBO VEB = 5V, Ic = 0 − − 5 mA
Note 1. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%.