2N4398 & 2N4399
Silicon PNP Transistor
High Power
Description:
The 2N4398 and 2N4399 are silicon PNP high power transistors in a TO3 type package designed
for use in power amplifier and switching circuits.
Features:
DLow Collector−Emitter Saturation Voltage: IC = 15A, VCE(sat) = 1.0V Max
DDC Current Gain Specified: 1.0 o 30A
Absolute Maximum Ratings:
Collector−Emitter Voltage, VCEO
2N4398 40V.....................................................................
2N4399 60V.....................................................................
Collector−Base Voltage, VCB
2N4398 40V.....................................................................
2N4399 60V.....................................................................
Emitter−Base Voltage, VEB 5.0V.........................................................
Collector Current, IC
Continuous 30A..................................................................
Peak 50A.......................................................................
Base Current, IB
Continuous 7.5A.................................................................
Peak 15A.......................................................................
Total Power Dissipation, PD
TA = +25°C 5W..................................................................
Derate Above +25°C 28.8W/°C..................................................
TC = +25°C 200W................................................................
Derate Above +25°C 1.15W/°C..................................................
Operating Junction Temperature Range, Tj−65° to +200°C..................................
Storage Temperature Range, Tstg −65° to +200°C..........................................
Thermal Resistance, Junction−to−Case, RthJC 0.875°C/W...................................
Thermal Resistance, Junction−to−Ambient, RthJA 35°C/W....................................
Electrical Characteristics: (TC = +25°C unless otherwise specified)
Parameter Symbol Test Conditions Min Typ Max Unit
Off Characteristics
Collector−Emitter Sustaining Voltage
2N4398 VCEO(SUS) IC = 200mA, IB = 0, Note 1 40 − − V
2N4399 60 − − V
Collector Cutoff Current ICEO VCE = Rated Value, VBE(OFF) = 1.5V − − 5 mA
ICEX VCE = 30V,
VBE(OFF) = 1.5V
− − 5 mA
TC = +150°C− − 10 mA
ICBO VCE = Rated Value, IE = 0 − − 1 mA
Emitter Cutoff Current IEBO VEB = 5V, Ic = 0 − − 5 mA
Note 1. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%.
Electrical Characteristics (Cont’d): (TC = +25°C unless otherwise specified)
Parameter Symbol Test Conditions Min Typ Max Unit
On Characteristics (Note 1)
DC Current Gain hFE VCE = 2V IC = 1A 40 − −
IC = 15A 15 −60
IC = 30A 5− −
Collector−Emitter Saturation Voltage VCE(sat) IC = 10A, IB = 1A − − 0.75 V
IC = 15A, IB = 1.5A − − 1.0 V
IC = 20A, IB = 2A − − 2.0 V
IC = 30A, IB = 6A − − 4.0 V
Base−Emitter Saturation Voltage VBE(sat) IC = 10A, IB = 1A − − 1.6 V
IC = 15A, IB = 1.5A − − 1.85 V
IC = 20A, IB = 2A − − 2.5 V
Base−Emitter ON Voltage VBE(on) IC = 15A, VCE = 2V − − 1.7 V
IC = 30A, VCE = 4V − − 3.0 V
Dynamic Characteristics
Current Gain Bandwidth Product fTIC = 1A, VCE = 10V, f = 1MHz 4− − MHz
Small−Signal Current Gain hfe IC = 1A, VCE = 10V, f = 1MHz 40 − −
Switching Characteristics
Rise Time trVCC = 30V, IC = 10A, IB1 = IB2 = 1A − − 0.4 us
Storage Time ts− − 1.5 us
Fall Time tf− − 0.6 us
Note 1. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%.
1.187 (30.16)
.875 (22.2)
Dia Max
.665
(16.9)
.430
(10.92)
Seating
Plane
.040 (1.02).312 (7.93) Min
.135 (3.45) Max
.350 (8.89)
Emitter
Collector/Case
Base
.215 (5.45)
.525 (13.35) R Max
.156 (3.96) Dia
(2 Holes)
.188 (4.8) R Max
