AOW2500
150V N-Channel MOSFET
General Description Product Summary
V
DS
I
D
(at V
GS
=10V) 152A
R
DS(ON)
(at V
GS
=10V) < 6.2mΩ
R
DS(ON)
(at V
GS
=6V) < 7.3mΩ
100% UIS Tested
100% R
g
Tested
Symbol
V
DS
Parameter
Absolute Maximum Ratings T
A
=25°C unless otherwise noted
150V
The AOW2500 uses Trench MOSFET technology that is
uniquely optimized to provide the most efficient high
frequency switching performance. Both conduction and
switching power losses are minimized due to an
extremely low combination of R
DS(ON)
, Ciss and Coss.
This device is ideal for boost converters and synchronous
rectifiers for consumer, telecom, industrial power supplies
and LED backlighting.
Drain-Source Voltage
150
V
Maximum Units
G
D
S
Top View
TO-262
Bottom View
V
DS
V
GS
I
DM
I
AS
E
AS
T
J
, T
STG
Symbol
t ≤ 10s
Steady-State
Steady-State
R
θJC
Units
Junction and Storage Temperature Range -55 to 175 °C
Thermal Characteristics
Parameter Typ Max
Maximum Junction-to-Case °C/W
°C/W
Maximum Junction-to-Ambient
A D
0.26 60
0.4
W
Power Dissipation
A
P
DSM
W
T
A
=70°C
375
1.3
T
A
=25°C
T
C
=25°C
2.1
187.5
T
C
=100°C
Power Dissipation
B
P
D
T
A
=70°C
I
D
152
107
T
C
=25°C
T
C
=100°C 440Pulsed Drain Current
C
Continuous Drain
Current
mJ
Avalanche Current
C
9.0
Continuous Drain
Current
634
11.5
A65
Avalanche energy L=0.3mH
C
A
T
A
=25°C I
DSM
A
Maximum Junction-to-Ambient
°C/W
R
θJA
12
48 15
V±20Gate-Source Voltage
Drain-Source Voltage
150
V
Rev.1.0: July 2013
www.aosmd.com Page 1 of 6
AOW2500
Symbol Min Typ Max Units
BV
DSS
150 V
V
DS
=150V, V
GS
=0V 1
T
J
=55°C 5
I
GSS
±100 nA
V
GS(th)
Gate Threshold Voltage 2.3 2.8 3.5 V
5.1 6.2
T
J
=125°C 9.9 12
g
FS
70 S
V
SD
0.66 1 V
I
S
152 A
C
iss
6460 pF
C
oss
586 pF
C
rss
22 pF
R
g
1 2.1 3.2 Ω
Q
g(10V)
97 136 nC
Q
gs
22.5 nC
Q
gd
17 nC
t
D(on)
18.5 ns
t
r
20 ns
t
67.5
ns
V
GS
=6V, I
D
=20A
TO262 5.6 7.3 mΩ
V
DS
=V
GS，
I
D
=250µA
Electrical Characteristics (T
J
=25°C unless otherwise noted)
STATIC PARAMETERS
Parameter Conditions
I
DSS
µA
Zero Gate Voltage Drain Current
Drain-Source Breakdown Voltage I
D
=250µA, V
GS
=0V
V
DS
=0V, V
GS
=±20V
Gate-Body leakage current
Total Gate Charge
V
GS
=10V, I
D
=20A
Gate Source Charge
Gate Drain Charge
SWITCHING PARAMETERS
R
DS(ON)
Static Drain-Source On-Resistance
Diode Forward Voltage
V
GS
=10V, V
DS
=75V, I
D
=20A
Reverse Transfer Capacitance V
GS
=0V, V
DS
=75V, f=1MHz
mΩ
I
S
=1A,V
GS
=0V
V
DS
=5V, I
D
=20A
TO262
Forward Transconductance
Maximum Body-Diode Continuous Current
Input Capacitance
Output Capacitance
Turn-On DelayTime
DYNAMIC PARAMETERS
Turn-On Rise Time
Turn-Off DelayTime
V
GS
=10V, V
DS
=75V, R
L
=3.75Ω,
R
=3
Ω
Gate resistance V
GS
=0V, V
DS
=0V, f=1MHz
t
D(off)
67.5
ns
t
f
14 ns
t
rr
90 ns
Q
rr
1090 nC
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Turn-Off Fall Time I
F
=20A, dI/dt=500A/µs
Body Diode Reverse Recovery Charge
Body Diode Reverse Recovery Time I
F
=20A, dI/dt=500A/µs
Turn-Off DelayTime
R
GEN
=3
Ω
A. The value of RθJA is measured with the device mounted on 1in2FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The
Power dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application
depends on the user's specific board design, and the maximum temperature of 175°C may be used if the PCB allows it.
B. The power dissipation PDis based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C. Ratings are based on low frequency and duty cycles to keep
initial TJ =25°C.
D. The RθJA is the sum of the thermal impedance from junction to case RθJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink,
assuming a maximum junction temperature of TJ(MAX)=175°C. The SOA curve provides a single pulse rating.
G. The maximum current limited by package.
H. These tests are performed with the device mounted on 1 in2FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.
Rev.1.0: July 2013 www.aosmd.com Page 2 of 6
AOW2500
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
17
5
2
10
0
18
0
20
40
60
80
100
23456
ID(A)
VGS(Volts)
Figure 2: Transfer Characteristics (Note E)
2
4
6
8
0 5 10 15 20 25 30
RDS(ON) (mΩ
Ω
Ω
Ω)
ID(A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage (Note E)
VGS=6V
0.8
1
1.2
1.4
1.6
1.8
2
2.2
2.4
2.6
2.8
0 25 50 75 100 125 150 175 200
Normalized On-Resistance
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
(Note E)
VGS=10V
I
D
=20A
VGS=6V
ID=20A
25°C
125°C
VDS=5V
VGS=10V
0
20
40
60
80
100
0 1 2 3 4 5
ID(A)
VDS (Volts)
Fig 1: On-Region Characteristics (Note E)
6V
4.5V
10V
V
GS
=4V
5V
40
1.0E-05
1.0E-04
1.0E-03
1.0E-02
1.0E-01
1.0E+00
1.0E+01
1.0E+02
0.0 0.2 0.4 0.6 0.8 1.0 1.2
IS(A)
VSD (Volts)
Figure 6: Body-Diode Characteristics (Note E)
25°C
125°C
(Note E)
0
3
6
9
12
15
2 4 6 8 10
RDS(ON) (mΩ
Ω
Ω
Ω)
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
ID=20A
25°C
125°C
Rev.1.0: July 2013 www.aosmd.com Page 3 of 6
AOW2500
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
17
5
2
10
0
18
0
2
4
6
8
10
0 20 40 60 80 100
VGS (Volts)
Qg(nC)
Figure 7: Gate-Charge Characteristics
0
2000
4000
6000
8000
10000
0 30 60 90 120 150
Capacitance (pF)
VDS (Volts)
Figure 8: Capacitance Characteristics
C
iss
0
200
400
600
800
1000
0.0001 0.001 0.01 0.1 1 10
Power (W)
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-Case
C
oss
C
rss
VDS=75V
ID=20A
TJ(Max)=175°C
TC=25°C
10
µ
s
0.0
0.1
1.0
10.0
100.0
1000.0
0.01 0.1 1 10 100 1000
ID(Amps)
VDS (Volts)
VGS > or equal to 6V
Figure 9: Maximum Forward Biased
10µs
10ms
1ms
DC
RDS(ON)
limited
TJ(Max)=175°C
TC=25°C
100
µ
40
(Note F)
0.01
0.1
1
10
1E-05 0.0001 0.001 0.01 0.1 1 10
Zθ
θ
θ
θJC Normalized Transient
Thermal Resistance
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Single Pulse
D=Ton/T
TJ,PK=TC+PDM.ZθJC.RθJC
T
on
T
P
D
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
Figure 9: Maximum Forward Biased
Safe Operating Area (Note F)
RθJC=0.4°C/W
Rev.1.0: July 2013 www.aosmd.com Page 4 of 6
AOW2500
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
17
5
2
10
0
18
0
50
100
150
200
250
300
350
400
0 25 50 75 100 125 150 175
Power Dissipation (W)
TCASE (°C)
Figure 13: Power De-rating (Note F)
0
50
100
150
200
0 25 50 75 100 125 150 175
Current rating ID(A)
TCASE (°C)
Figure 14: Current De
-
rating (Note F)
1
10
100
1000
0.001 0.01 0.1 1 10 100 1000
Power (W)
Pulse Width (s)
Figure 15: Single Pulse Power Rating Junction
-
to
-
TA=25°C
10
100
1000
1 10 100 1000
IAR (A) Peak Avalanche Current
Time in avalanche, tA(µ
µµ
µs)
Figure 12: Single Pulse Avalanche capability
(Note C)
TA=25°C
T
A
=150°CTA=100°C
T
A
=125°C
40
0.001
0.01
0.1
1
10
0.001 0.01 0.1 1 10 100 1000
Zθ
θ
θ
θJA Normalized Transient
Thermal Resistance
Pulse Width (s)
Figure 16: Normalized Maximum Transient Thermal Impedance (Note H)
Single Pulse
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
Ton T
P
D
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
Figure 14: Current De
-
rating (Note F)
Figure 15: Single Pulse Power Rating Junction
-
to
-
Ambient (Note H)
RθJA=60°C/W
Rev.1.0: July 2013 www.aosmd.com Page 5 of 6
AOW2500
-
+
VDC
Ig
Vds
DUT
-
+
VDC
Vgs
Vgs
10V
Qg
Qgs Qgd
Charge
Gate Charge Test Circuit & Waveform
-
+
VDC
DUT Vdd
Vgs
Vds
Vgs
RL
Rg
Vgs
Vds
10%
90%
Resistive Switching Test Circuit & Waveforms
t t
r
d(on)
t
on
t
d(off)
t
f
t
off
Id
+
L
Vgs
Vds
BV
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
Vds
DSS
2
E = 1/2 LI
AR
AR
Vdd
Vgs
Vgs
Rg
DUT
-
+
VDC
Vgs
Id
Vgs
I
Ig
Vgs
-
+
VDC
DUT
L
Vgs
Vds
Isd
Isd
Diode Recovery Test Circuit & Waveforms
Vds -
Vds +
I
F
AR
dI/dt
I
RM
rr
Vdd
Vdd
Q = - Idt
t
rr
Rev.1.0: July 2013 www.aosmd.com Page 6 of 6