1. Product profile
1.1 General description
NPN medium power tran sistor series in Surface-Mo unted Device (SMD) plastic p ackages.
[1] Valid for all available selection groups.
1.2 Features and benefits
High current
Three current gain selections
High power dissipation capability
Exposed heatsink for excellent thermal and electrical conductivity (SOT89, SOT1061)
Leadless very small SMD plas tic package with medium power capability (SOT1061)
AEC-Q101 qualified
1.3 Applications
1.4 Quick reference data
[1] Pulse test: tp300 s; = 0.02.
BCP55; BCX55; BC55PA
60 V, 1 A NPN medium power transistors
Rev. 8 — 24 October 2011 Product data sheet
Table 1. Product overview
Type number[1] Package PNP complement
Nexperia JEITA JEDEC
BCP55 SOT223 SC-73 - BCP52
BCX55 SOT89 SC-62 TO-243 BCX52
BC55PA SOT1061 - - BC52PA
Linear voltage regulators Power management
Low-side switches MOSFET drivers
Battery-driven devices Amplifiers
Table 2. Quick reference data
Symbol Parameter Conditions Min Typ Max Unit
VCEO collector-emitter voltage open base - - 60 V
ICcollector current - - 1 A
ICM peak collector current single pulse; tp1ms--2A
hFE DC current gain VCE =2V; I
C=150mA [1] 63 - 250
hFE selection -10 VCE =2V; I
C=150mA [1] 63 - 160
hFE selection -16 VCE =2V; I
C=150mA [1] 100 - 250
© Nexperia B.V. 2017. All rights reserved
BCP55_BCX55_BC55PA All information provided in this document is subject to legal disclaimers.
Product data sheet Rev. 8 — 24 October 2011 2 of 22
Nexperia BCP55; BCX55; BC55PA
60 V, 1 A NPN medium power transistors
2. Pinning information
3. Ordering information
[1] Valid for all available selection groups.
Table 3. Pinning
Pin Description Simplified outline Graphic symbol
SOT223
1base
2 collector
3emitter
4 collector
SOT89
1emitter
2 collector
3base
SOT1061
1base
2emitter
3 collector
132
4
sym016
2, 4
3
1
321
sym042
1
2
3
Transparent top view
12
3
sym021
3
2
1
Tabl e 4. Ordering information
Type number[1] Package
Name Description Version
BCP55 SC-73 plastic surface-mounted package with increased
heatsink; 4 leads SOT223
BCX55 SC-62 plastic surface-mounted package; exposed die pad for
good heat transfer; 3 leads SOT89
BC55PA HUSON3 plastic thermal enhanced ultra thin small outline
package; no leads; 3 terminals; body 2 20.65 mm SOT1061
© Nexperia B.V. 2017. All rights reserved
BCP55_BCX55_BC55PA All information provided in this document is subject to legal disclaimers.
Product data sheet Rev. 8 — 24 October 2011 3 of 22
Nexperia BCP55; BCX55; BC55PA
60 V, 1 A NPN medium power transistors
4. Marking
Table 5. Marking codes
Type number Marking code
BCP55 BCP55
BCP55-10 BCP55/10
BCP55-16 BCP55/16
BCX55 BE
BCX55-10 BG
BCX55-16 BM
BC55PA AW
BC55-10PA BH
BC55-16PA BJ
© Nexperia B.V. 2017. All rights reserved
BCP55_BCX55_BC55PA All information provided in this document is subject to legal disclaimers.
Product data sheet Rev. 8 — 24 October 2011 4 of 22
Nexperia BCP55; BCX55; BC55PA
60 V, 1 A NPN medium power transistors
5. Limiting values
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm2.
[3] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 6 cm2.
[4] Device mounted on an FR4 PCB, 4-layer copper, tin-plated and standard footprint.
[5] Device mounted on an FR4 PCB, 4-layer copper, tin-plated, mounting pad for collector 1 cm2.
Table 6. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
VCBO collector-base voltage open emitter - 60 V
VCEO collector-emitter voltage open base - 60 V
VEBO emitter-base voltage open collector - 5 V
ICcollector current - 1 A
ICM peak collector current single pulse;
tp1ms -2A
IBbase current - 0.3 A
IBM peak base current single pulse;
tp1ms -0.3A
Ptot total power dissipation Tamb 25 C
BCP55 [1] -0.65W
[2] -1.00W
[3] -1.35W
BCX55 [1] -0.50W
[2] -0.95W
[3] -1.35W
BC55PA [1] -0.42W
[2] -0.83W
[3] -1.10W
[4] -0.81W
[5] -1.65W
Tjjunction temperature - 150 C
Tamb ambient temperature 55 +150 C
Tstg storage temperature 65 +150 C
© Nexperia B.V. 2017. All rights reserved
BCP55_BCX55_BC55PA All information provided in this document is subject to legal disclaimers.
Product data sheet Rev. 8 — 24 October 2011 5 of 22
Nexperia BCP55; BCX55; BC55PA
60 V, 1 A NPN medium power transistors
(1) FR4 PCB, mounting pad for collector 6 cm2
(2) FR4 PCB, mounting pad for collector 1 cm2
(3) FR4 PCB, standard footprint
(1) FR4 PCB, mounting pad for collector 6 cm2
(2) FR4 PCB, mounting pad for collector 1 cm2
(3) FR4 PCB, standard footprint
Fig 1. Power derating curves SOT223 Fig 2. Power derating curves SOT89
(1) FR4 PCB, 4-layer copper, mounting pad for collector 1 cm2
(2) FR4 PCB, single-sided copper, mounting pad for collector 6 cm2
(3) FR4 PCB, single-sided copper, mounting pad for collector 1 cm2
(4) FR4 PCB, 4-layer copper, standard footprint
(5) FR4 PCB, single-sided copper, standard footprint
Fig 3. Power derating curves S OT 10 6 1
Tamb (°C)
–75 17512525 75–25
006aac674
0.5
1.0
1.5
Ptot
(W)
0.0
(1)
(2)
(3)
Tamb (°C)
–75 17512525 75–25
006aac675
0.5
1.0
1.5
Ptot
(W)
0.0
(1)
(2)
(3)
Tamb (°C)
–75 17512525 75–25
006aac676
1.0
0.5
1.5
2.0
Ptot
(W)
0.0
(1)
(2)
(3)
(4)
(5)
© Nexperia B.V. 2017. All rights reserved
BCP55_BCX55_BC55PA All information provided in this document is subject to legal disclaimers.
Product data sheet Rev. 8 — 24 October 2011 6 of 22
Nexperia BCP55; BCX55; BC55PA
60 V, 1 A NPN medium power transistors
6. Thermal characteristics
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm2.
[3] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 6 cm2.
[4] Device mounted on an FR4 PCB, 4-layer copper, tin-plated and standard footprint.
[5] Device mounted on an FR4 PCB, 4-layer copper, tin-plated, mounting pad for collector 1 cm2.
Table 7. Thermal characteris tics
Symbol Parameter Conditions Min Typ Max Unit
Rth(j-a) thermal resistance from
junction to ambient in free air
BCP55 [1] --192K/W
[2] --125K/W
[3] --93K/W
BCX55 [1] --250K/W
[2] --132K/W
[3] --93K/W
BC55PA [1] --298K/W
[2] --151K/W
[3] --114K/W
[4] --154K/W
[5] --76K/W
Rth(j-sp) thermal resistance from
junction to solder poi nt
BCP55 - - 16 K/W
BCX55 - - 16 K/W
BC55PA --20K/W
© Nexperia B.V. 2017. All rights reserved
BCP55_BCX55_BC55PA All information provided in this document is subject to legal disclaimers.
Product data sheet Rev. 8 — 24 October 2011 7 of 22
Nexperia BCP55; BCX55; BC55PA
60 V, 1 A NPN medium power transistors
FR4 PCB, standard footprint
Fig 4. Transient thermal impedance from junc tio n to ambient as a function of p ul se duration for SOT223;
typical values
FR4 PCB, mounting pad for collector 1 cm2
Fig 5. Transient thermal impedance from junc tio n to ambient as a function of p ul se duration for SOT223;
typical values
006aac677
10
1
102
103
Zth(j-a)
(K/W)
10–1
10–5 1010–2
10–4 102
10–1 tp (s)
10–3 103
1
0
duty cycle = 1
0.01
0.02
0.05 0.1
0.2 0.33
0.5 0.75
006aac678
10
1
102
103
Zth(j-a)
(K/W)
10–1
10–5 1010–2
10–4 102
10–1 tp (s)
10–3 103
1
0
duty cycle = 1
0.01
0.02
0.05 0.1
0.2 0.33
0.5 0.75
© Nexperia B.V. 2017. All rights reserved
BCP55_BCX55_BC55PA All information provided in this document is subject to legal disclaimers.
Product data sheet Rev. 8 — 24 October 2011 8 of 22
Nexperia BCP55; BCX55; BC55PA
60 V, 1 A NPN medium power transistors
FR4 PCB, mounting pad for collector 6 cm2
Fig 6. Transient thermal impedance from junc tio n to ambient as a function of p ul se duration for SOT223;
typical values
FR4 PCB, standard footprint
Fig 7. Transient thermal impedance from junction to ambient as a function of pulse duration for SOT89;
typical values
006aac679
10
1
102
103
Zth(j-a)
(K/W)
10–1
10–5 1010–2
10–4 102
10–1 tp (s)
10–3 103
1
0
duty cycle = 1
0.01
0.02
0.05 0.1
0.2 0.33
0.5 0.75
006aac680
10
1
102
103
Zth(j-a)
(K/W)
10–1
10–5 1010–2
10–4 102
10–1 tp (s)
10–3 103
1
0
duty cycle = 1
0.01
0.02
0.05 0.1
0.2 0.33
0.5 0.75
© Nexperia B.V. 2017. All rights reserved
BCP55_BCX55_BC55PA All information provided in this document is subject to legal disclaimers.
Product data sheet Rev. 8 — 24 October 2011 9 of 22
Nexperia BCP55; BCX55; BC55PA
60 V, 1 A NPN medium power transistors
FR4 PCB, mounting pad for collector 1 cm2
Fig 8. Transient thermal impedance from junction to ambient as a function of pulse duration for SOT89;
typical values
FR4 PCB, mounting pad for collector 6 cm2
Fig 9. Transient thermal impedance from junction to ambient as a function of pulse duration for SOT89;
typical values
006aac681
10
1
102
103
Zth(j-a)
(K/W)
10–1
10–5 1010–2
10–4 102
10–1 tp (s)
10–3 103
1
0
duty cycle = 1
0.01
0.02
0.05 0.1
0.2 0.33
0.5 0.75
006aac682
10
1
102
103
Zth(j-a)
(K/W)
10–1
10–5 1010–2
10–4 102
10–1 tp (s)
10–3 103
1
0
duty cycle = 1
0.01
0.05
0.1
0.2 0.33
0.5 0.75
0.02
© Nexperia B.V. 2017. All rights reserved
BCP55_BCX55_BC55PA All information provided in this document is subject to legal disclaimers.
Product data sheet Rev. 8 — 24 October 2011 10 of 22
Nexperia BCP55; BCX55; BC55PA
60 V, 1 A NPN medium power transistors
FR4 PCB, single-sided copper, standard footprint
Fig 10. Transient thermal impedance from junction to ambient as a function of pulse duration for SOT1061;
typical values
FR4 PCB, single-sided copper, mounting pad for collector 1 cm2
Fig 11. Transient thermal impedance from junction to ambient as a function of pulse duration for SOT1061;
typical values
006aac683
10
1
102
103
Zth(j-a)
(K/W)
10–1
10–5 1010–2
10–4 102
10–1 tp (s)
10–3 103
1
0
duty cycle = 1
0.01
0.05
0.1 0.2
0.33
0.5 0.75
0.02
0.25
006aac684
10
1
102
103
Zth(j-a)
(K/W)
10–1
10–5 1010–2
10–4 102
10–1 tp (s)
10–3 103
1
0
duty cycle = 1
0.01
0.05
0.1 0.2
0.33
0.5 0.75
0.02
0.25
© Nexperia B.V. 2017. All rights reserved
BCP55_BCX55_BC55PA All information provided in this document is subject to legal disclaimers.
Product data sheet Rev. 8 — 24 October 2011 11 of 22
Nexperia BCP55; BCX55; BC55PA
60 V, 1 A NPN medium power transistors
FR4 PCB, single-sided copper, mounting pad for collector 6 cm2
Fig 12. Transient thermal impedance from junction to ambient as a function of pulse duration for SOT1061;
typical values
FR4 PCB, 4-layer copper, standard footprint
Fig 13. Transient thermal impedance from junction to ambient as a function of pulse duration for SOT1061;
typical values
006aac685
10
1
102
103
Zth(j-a)
(K/W)
10–1
10–5 1010–2
10–4 102
10–1 tp (s)
10–3 103
1
0
duty cycle = 1
0.01
0.05
0.1 0.2
0.33
0.5 0.75
0.02
0.25
006aac686
10
1
102
103
Zth(j-a)
(K/W)
10–1
10–5 1010–2
10–4 102
10–1 tp (s)
10–3 103
1
0
duty cycle = 1
0.01
0.05
0.1 0.2
0.33
0.5 0.75
0.02
0.25
© Nexperia B.V. 2017. All rights reserved
BCP55_BCX55_BC55PA All information provided in this document is subject to legal disclaimers.
Product data sheet Rev. 8 — 24 October 2011 12 of 22
Nexperia BCP55; BCX55; BC55PA
60 V, 1 A NPN medium power transistors
7. Characteristics
[1] Pulse test: tp300 s; = 0.02.
FR4 PCB, 4-layer copper, mounting pad for collector 1 cm2
Fig 14. Transient thermal impedance from junction to ambient as a function of pulse duration for SOT1061;
typical values
006aac687
10
1
102
103
Zth(j-a)
(K/W)
10–1
10–5 1010–2
10–4 102
10–1 tp (s)
10–3 103
1
0
duty cycle = 1
0.01
0.05
0.1 0.2
0.33
0.5 0.75
0.02
0.25
Table 8. Characteristics
Tamb =25
C unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
ICBO collector-base cut-off
current VCB =30V; I
E= 0 A - - 100 nA
VCB =30V; I
E=0A;
Tj= 150 C--10A
IEBO emitter-base cut-of f
current VEB =5V; I
C= 0 A - - 100 nA
hFE DC current ga in VCE =2V
IC=5mA [1] 63 - -
IC=150mA [1] 63 - 250
IC=500mA [1] 40 - -
DC current ga in VCE =2V
hFE selection -10 IC=150mA [1] 63 - 160
hFE selection -16 IC=150mA [1] 100 - 250
VCEsat collector-emitter
saturation voltage IC=500mA; I
B=50mA [1] --0.5V
VBE base-emitter vo ltage VCE =2V; I
C= 500 mA [1] --1V
Cccollector capacitance VCB =10V; I
E=i
e=0A;
f=1MHz -6-pF
fTtransition frequency VCE =5V; I
C=50mA;
f=100MHz 100 180 - MHz
© Nexperia B.V. 2017. All rights reserved
BCP55_BCX55_BC55PA All information provided in this document is subject to legal disclaimers.
Product data sheet Rev. 8 — 24 October 2011 13 of 22
Nexperia BCP55; BCX55; BC55PA
60 V, 1 A NPN medium power transistors
VCE =2V
(1) Tamb = 100 C
(2) Tamb =25C
(3) Tamb =55 C
Tamb =25C
Fig 15. DC current gain as a function of collector
current; typical values Fig 16. Collector current as a function of
collector-emitter voltage; typical values
VCE = 2 V
(1) Tamb =55 C
(2) Tamb =25C
(3) Tamb = 100 C
IC/IB=10
(1) Tamb = 100 C
(2) Tamb =25C
(3) Tamb =55 C
Fig 17. Ba se-emitter voltage as a function of collector
current; typical values Fig 18. Collector- em itter saturatio n voltage as a
function of collector current; typical values
006aac691
100
200
300
hFE
0
IC (A)
10–4 10110–3 10–1
10–2
(1)
(2)
(3)
VCE (V)
0 2.01.60.8 1.20.4
006aaa084
0.8
0.4
1.2
1.6
IC
(A)
0
25
20
15
10
5
IB (mA) = 50 45 40 35 30
006aac692
0.4
0.8
1.2
VBE
(V)
0.0
IC (mA)
10–1 104
103
110
2
10
(1)
(2)
(3)
006aac693
IC (mA)
10–1 104
103
110
2
10
10–1
1
VCEsat
(V)
10–2
(1)
(2)
(3)