Publication Date : Oct．2011
1
< Silicon RF Power Modules >
RA30H1317M1
RoHS Compliance, 135-175MHz 30W 12.5V 2 Stage Amp. For MOBILE RADIO
DESCRIPTION
The RA30H1317M1 is a 30-watt RF MOSFET Amplifier Module for
12.5-volt mobile radios that operate in the 135- to 175-MHz range.
The battery can be connected directly to the drain of the
enhancement-mode MOSFET transistors.
The output power and drain current increase as the gate voltage
increases. With a gate voltage around 3.5V (minimum), output
power and drain current increases substantially.
The nominal output power becomes available at 4V (typical) and 5V
(maximum). At VGG=5V, the typical gate current is 1 mA.
This module is designed for non-linear FM modulation.
FEATURES
• Enhancement-Mode MOSFET Transistors
(IDD0 @ VDD=12.5V, VGG=0V)
• Pout>30W, T>40% @ VDD=12.5V, VGG=5V, Pin=50mW
• Broadband Frequency Range: 135-175MHz
• Low-Power Control Current IGG=1mA (typ) at VGG=5V
• Module Size: 67 x 19.4 x 9.9 mm
RoHS COMPLIANCE
• RA30H1317M1-201 is a RoHS compliant product.
• RoHS compliance is indicate by the letter “G” after the Lot Marking.
• This product include the lead in the Glass of electronic parts and the lead in
electronic Ceramic parts.
However, it is applicable to the following exceptions of RoHS Directions.
1.Lead in the Glass of a cathode-ray tube, electronic parts, and fluorescent tubes.
2.Lead in electronic Ceramic parts.
ORDERING INFORMATION:
ORDER NUMBER SUPPLY FORM
RA30H1317M1-201 Antistatic tray,
10 modules/tray
BLOCK
DIAGRAM
1 RF Input (Pin)
2 Gate Voltage (VGG), Power Control
3 Drain Voltage (VDD), Battery
4 RF Output (Pout)
5 RF Ground (Case)
3
2
4
1
5
PACKAGE CODE: H2M
< Silicon RF Power Modules >
RA30H1317M1
RoHS Compliance, 135-175MHz 30W 12.5V 2 Stage Amp. For MOBILE RADIO
Publication Date : Oct．2011
2
MAXIMUM RATINGS (Tcase=+25°C, unless otherwise specified)
SYMBOL PARAMETER CONDITIONS RATING UNIT
VDD Drain Voltage VGG<5V, ZG=ZL=5017 V
VGG Gate Voltage VDD<12.5V, Pin=50mW, ZG=ZL=506 V
Pin Input Power 100 mW
Pout Output Power 45 W
Tcase(OP) Operation Case Temperature Range f=135-175MHz, VGG<5V -30 to +100 °C
Tstg Storage Temperature Range -40 to +110 °C
The above parameters are independently guaranteed.
ELECTRICAL CHARACTERISTICS (Tcase=+25°C, ZG=ZL=50, unless otherwise specified)
SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNIT
f Frequency Range 135 - 175 MHz
Pout Output Power 30 - - W
TTotal Efficiency 40 - - %
2fo2nd Harmonic - - -35 dBc
3fo3rd Harmonic - - -45 dBc
in Input VSWR
VDD=12.5V,VGG=5V,Pin=50mW
- - 3:1 —
IGG Leakage Current VDD=12.5V,VGG=0V,Pin=0W - - 1 mA
— Stability VDD=10.0-15.2V, Pin=25-70mW,
Pout<30W (VGG control), Load VSWR=3:1 No parasitic oscillation
More than –60dBc —
— Load VSWR Tolerance VDD=15.2V, Pin=50mW, Pout=30W (VGG control),
Load VSWR=20:1 No degradation or destroy —
All parameters, conditions, ratings, and limits are subject to change without notice.
< Silicon RF Power Modules >
RA30H1317M1
RoHS Compliance, 135-175MHz 30W 12.5V 2 Stage Amp. For MOBILE RADIO
Publication Date : Oct．2011
3
TYPICAL PERFORMANCE (Tcase=+25°C, ZG=ZL=50, unless otherwise specified)
OUTPUT POWER, POWER GAIN and
DRAIN CURRENT versus INPUT POWER
0
5
10
15
20
25
30
35
40
45
50
-10 -5 0 5 10 15 20
Input Power Pin(dBm)
Output Power Pout(dBm)
Power Gain Gp(dB)
0
1
2
3
4
5
6
7
8
9
10
Drain Current IDD(A)
Pout
IDD
Gp
f=135MHz
VDD=12.5V
VGG=5V
OUTPUT POWER, TOTAL EFFICIENCY,
and INPUT VSWR versus Frequency
0
5
10
15
20
25
30
35
40
45
50
130 140 150 160 170 180
Frequencyf(MHz)
Output Power Pout(W)
Input VSWRρin (-)
0
10
20
30
40
50
60
70
80
90
100
Total Efficiencyηt(%)
Pout
ηｔ
VDD=12.5V
VGG=5V
Pin=50mW
ρin
2nd, 3rd HARMONICS versus FREQUENCY
-70
-65
-60
-55
-50
-45
-40
-35
-30
-25
-20
130 140 150 160 170 180
Frequency f(MHz)
Harmonics (dBc)
2nd
3rd
VDD=12.5V
VGG=5V
Pin=50mW
OUTPUT POWER, POWER GAINand
DRAIN CURRENT versus INPUT POWER
0
5
10
15
20
25
30
35
40
45
50
-10 -5 0 5 10 15 20
Input Power Pin(dBm)
Output Power Pout(dBm)
Power Gain Gp(dB)
0
1
2
3
4
5
6
7
8
9
10
Drain Current IDD(A)
Pout
IDD
Gp
f=155MHz
VDD=12.5V
VGG=5V
OUTPUT POWER, POWER GAIN and
DRAIN CURRENT versus INPUT POWER
0
5
10
15
20
25
30
35
40
45
50
-10 -5 0 5 10 15 20
Input Power Pin(dBm)
Output Power Pout(dBm)
Power Gain Gp(dB)
0
1
2
3
4
5
6
7
8
9
10
Drain Current IDD(A)
Pout
IDD
Gp
f=175MHz
VDD=12.5V
VGG=5V
< Silicon RF Power Modules >
RA30H1317M1
RoHS Compliance, 135-175MHz 30W 12.5V 2 Stage Amp. For MOBILE RADIO
Publication Date : Oct．2011
4
TYPICAL PERFORMANCE (Tcase=+25°C, ZG=ZL=50, unless otherwise specified)
OUTPUT POWER and DRAINCURRENT
versus DRAINVOLTAGE
0
5
10
15
20
25
30
35
40
45
50
2 4 6 8 10 12 14
Drain Voltage VDD(V)
Output Power Pout(W)
0
1
2
3
4
5
6
7
8
9
10
Drain Current IDD(A)
f=135MHz
VGG=5V
Pin=50mW Pout
IDD
OUTPUT POWER and DRAINCURRENT
versus DRAINVOLTAGE
0
5
10
15
20
25
30
35
40
45
50
2 4 6 8 10 12 14
Drain Voltage VDD(V)
Output Power Pout(W)
0
1
2
3
4
5
6
7
8
9
10
Drain Current IDD(A)
f=155MHz
VGG=5V
Pin=50mW Pout
IDD
OUTPUT POWER and DRAINCURRENT
versus DRAINVOLTAGE
0
5
10
15
20
25
30
35
40
45
50
2 4 6 8 10 12 14
Drain Voltage VDD(V)
Output Power Pout(W)
0
1
2
3
4
5
6
7
8
9
10
Drain Current IDD(A)
f=175MHz
VGG=5V
Pin=50mW Pout
IDD
< Silicon RF Power Modules >
RA30H1317M1
RoHS Compliance, 135-175MHz 30W 12.5V 2 Stage Amp. For MOBILE RADIO
Publication Date : Oct．2011
5
TYPICAL PERFORMANCE (Tcase=+25°C, ZG=ZL=50, unless otherwise specified)
OUTPUT POWER and DRAINCURRENT
versus GATEVOLTAGE
0
5
10
15
20
25
30
35
40
45
50
2.5 3.0 3.5 4.0 4.5 5.0 5.5
Gate Voltage VGG(V)
Output Power Pout(W)
0
1
2
3
4
5
6
7
8
9
10
Drain Current IDD(A)
f=135MHz
VDD=12.5V
Pin=50mW Pout
IDD
OUTPUT POWER and DRAINCURRENT
versus GATEVOLTAGE
0
5
10
15
20
25
30
35
40
45
50
2.5 3.0 3.5 4.0 4.5 5.0 5.5
Gate Voltage VGG(V)
Output Power Pout(W)
0
1
2
3
4
5
6
7
8
9
10
Drain Current IDD(A)
f=155MHz
VDD=12.5V
Pin=50mW
Pout
IDD
OUTPUT POWER and DRAINCURRENT
versus GATEVOLTAGE
0
5
10
15
20
25
30
35
40
45
50
2.5 3.0 3.5 4.0 4.5 5.0 5.5
Gate Voltage VGG(V)
Output Power Pout(W)
0
1
2
3
4
5
6
7
8
9
10
Drain Current IDD(A)
f=175MHz
VDD=12.5V
Pin=50mW Pout
IDD
< Silicon RF Power Modules >
RA30H1317M1
RoHS Compliance, 135-175MHz 30W 12.5V 2 Stage Amp. For MOBILE RADIO
Publication Date : Oct．2011
6
1 RF Input (Pin)
2 Gate Voltage (VGG)
3 Drain Voltage (VDD)
4 RF Output (Pout)
5 RF Ground (Case)
OUTLINE
DRAWING
(mm)
3.1+0.6/-0.4
7.3±0.5
（9.9）
（2.6）
44±1
56±1
49.8±1
67±1
60±1
2-R2±0.5
19.4±1
15±1
17±1
12.5±1
10.7±1
②①
18±1
4±0.5
0.6±0.2
③ ④
(3.26)
⑤
< Silicon RF Power Modules >
RA30H1317M1
RoHS Compliance, 135-175MHz 30W 12.5V 2 Stage Amp. For MOBILE RADIO
Publication Date : Oct．2011
7
1 RF Input (Pin)
2 Gate Voltage (VGG)
3 Drain Voltage (VDD)
4 RF Output (Pout)
5 RF Ground (Case)
C1, C2
: 4700pF, 22uF in parallel
Directional
Coupler Attenuator
Power
Meter
Spectrum
Analyzer
Signal
Generator Attenuator
Pre-
amplifier
Power
Meter
Directional
Coupler
DUT
5
4
3
2
1
Z
G
=50
Z
L
=50
C1
C2
-
+
DC Power
Supply VGG
+
-
DC Power
Supply VDD
TEST BLOCK DIAGRAM
Attenuator
1
2
3
4
5
EQUIVALENT CIRCUIT
< Silicon RF Power Modules >
RA30H1317M1
RoHS Compliance, 135-175MHz 30W 12.5V 2 Stage Amp. For MOBILE RADIO
Publication Date : Oct．2011
8
RECOMMENDATIONS and APPLICATION INFORMATION:
Construction:
This module consists of a glass-epoxy substrate soldered onto a copper flange. For mechanical protection, a metal cap is
attached (which makes the improvement of RF radiation easy). The MOSFET transistor chips are die bonded onto
metal, wire bonded to the substrate, and coated with resin. Lines on the substrate (eventually inductors), chip capacitors,
and resistors form the bias and matching circuits. Wire leads soldered onto the glass-epoxy substrate provide the DC and
RF connection.
Following conditions must be avoided:
a) Bending forces on the glass-epoxy substrate (for example, by driving screws or from fast thermal changes)
b) Mechanical stress on the wire leads (for example, by first soldering then driving screws or by thermal expansion)
c) Defluxing solvents reacting with the resin coating on the MOSFET chips (for example, Trichloroethylene)
d) ESD, surge, overvoltage in combination with load VSWR, and oscillation
ESD:
This MOSFET module is sensitive to ESD voltages down to 1000V. Appropriate ESD precautions are required.
Mounting:
A thermal compound between module and heat sink is recommended for low thermal contact resistance.
The module must first be screwed to the heat sink, then the leads can be soldered to the printed circuit board.
M3 screws are recommended with a tightening torque of 4.0 to 6.0 kgf-cm.
Soldering and Defluxing:
This module is designed for manual soldering.
The leads must be soldered after the module is screwed onto the heat sink.
The temperature of the lead (terminal) soldering should be lower than 350°C and shorter than 3 second.
Ethyl Alcohol is recommend for removing flux. Trichloroethylene solvents must not be used (they may cause bubbles in
the coating of the transistor chips which can lift off the bond wires).
Thermal Design of the Heat Sink:
At Pout=30W, VDD=12.5V and Pin=50mW each stage transistor operating conditions are:
Stage Pin
(W) Pout
(W) Rth(ch-case)
(°C/W) IDD @T=40%
(A) VDD
(V)
1st 0.05 5.0 2.9 0.84
2nd 5.0 30.0 0.7 5.16 12.5
The channel temperatures of each stage transistor Tch = Tcase + (VDD x IDD - Pout + Pin) x Rth(ch-case) are:
Tch1 = Tcase + (12.5V x 0.84A – 5.0W + 0.05W) x 2.9°C/W = Tcase + 16.1 °C
Tch2 = Tcase + (12.5V x 5.16A - 30.0W + 5.0W) x 0.7°C/W = Tcase + 27.7 °C
For long-term reliability, it is best to keep the module case temperature (Tcase) below 90°C. For an ambient
temperature Tair=60°C and Pout=30W, the required thermal resistance Rth (case-air) = ( Tcase - Tair) / ( (Pout /T) - Pout +
Pin ) of the heat sink, including the contact resistance, is:
Rth(case-air) = (90°C - 60°C) / (30W/40% – 30W + 0.05W) = 0.67 °C/W
When mounting the module with the thermal resistance of 0.67 °C/W, the channel temperature of each stage transistor is:
Tch1 = Tair + 46.1 °C
Tch2 = Tair + 57.7 °C
The 175°C maximum rating for the channel temperature ensures application under derated conditions.
Output Power Control:
By the gate voltage (VGG).
Around VGG=3.5V, the output power and drain current increases substantially.
Around VGG=4V (typical) to VGG=5V (maximum), the nominal output power becomes available.
Oscillation:
To test RF characteristics, this module is put on a fixture with two bias decoupling capacitors each on gate and drain, a
4.700 pF chip capacitor, located close to the module, and a 22 µF (or more) electrolytic capacitor.
When an amplifier circuit around this module shows oscillation, the following may be checked:
a) Do the bias decoupling capacitors have a low inductance pass to the case of the module?
b) Is the load impedance ZL=50?
c) Is the source impedance ZG=50?
< Silicon RF Power Modules >
RA30H1317M1
RoHS Compliance, 135-175MHz 30W 12.5V 2 Stage Amp. For MOBILE RADIO
Publication Date : Oct．2011
9
ATTENTION:
1.High Temperature ; This product might have a heat generation while operation,Please take notice that
have
a possibility to receive a burn to touch the operating product directly or touch the product
until cold after switch
off. At the near the product,do not place the combustible material that have possibilities to arise the fire.
2.Generation of High Frequency Power ; This product generate a high frequency power. Please take notice
that do not leakage the unnecessary electric wave and use t
his products without cause damage for human and
property per normal operation.
3.Before use; Before use the product,Please design the equipment in consideration of the risk for human and
electric wave obstacle for equipment.
PRECAUTIONS FOR THE USE OF MITSUBISHI SILICON RF POWER DEVICES:
1. The specifications of mention are not guarantee values in this data sheet. Please confirm additional
details
regarding operation of these products from the formal specification sheet. For
copies of the formal
specification sheets, please contact one of our sales offices.
2.RA series products (RF power amplifier modules) and RD series products
(RF power transistors) are designed
for consumer mobile communication terminals and were not specifically designed for use in
other applications.
In particular, while these products are highly reliable for their designed purpose, they are not manufactured
under a
quality assurance testing protocol that is sufficient to guarantee the level of reliability typically deemed
necessary for critical communications elements and
In the application, which is base station applications and
fixed station applications that operate with long term continuous transmission and a higher on-
off frequency
during transmitting, please consider the derating, the redundancy system, appropriate setting of the maintain
period and others as needed. For the reliability report which is described about
predicted operating life time of
Mitsubishi Silicon RF Products , please contact Mitsubishi Electric Corporation or
an authorized Mitsubishi
Semiconductor product distributor.
3. RD series products use MOSFET semiconductor technology. They are sensitive to ESD voltage
therefore
appropriate ESD precautions are required.
4. In the case of use in below than recommended frequency, there is possibility to occur that the
device is
deteriorated or destroyed due to the RF-swing exceed the breakdown voltage.
5. In order to maximize reliability of the equipment, it is better to keep the devices temperature low.
It is
recommended to utilize a sufficient sized heat-
sink in conjunction with other cooling methods as needed (fan,
etc.) to keep the channel temperature for RD series products
lower than 120deg/C(in case of
Tchmax=150deg/C) ,140deg/C(in case of Tchmax=175deg/C) under standard conditions.
6. Do not use the device at the exceeded the maximum rating condition. In case of plastic molded devices, the
exceeded maximum rating condition may cause blowout, smoldering or catch fire of the molding resin due to
extreme short current flow between the drain and the source of the device. These results causes in fire or
injury.
7. For specific precautions regarding assembly of these products into the equipment, please refer to
the
supplementary items in the specification sheet.
8.
Warranty for the product is void if the products protective cap (lid) is removed or if the product is modified in
any way from it’s original form.
9. For additional “Safety first” in your circuit design and notes regarding the materials
, please refer the last page
of this data sheet.
10. Please refer to the additional precautions in the formal specification sheet.
< Silicon RF Power Modules >
RA30H1317M1
RoHS Compliance, 135-175MHz 30W 12.5V 2 Stage Amp. For MOBILE RADIO
Publication Date : Oct．2011
10
© 2011 MITSUBISHI ELECTRIC CORPORATION. ALL RIGHTS RESERVED.
Keep safety first in your circuit designs!
Mitsubishi Electric Corporation puts the maximum effort into making semiconductor products better and more
reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead
to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit
designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of
non-flammable material or (iii) prevention against any malfunction or mishap.
Notes regarding these materials
•These materials are intended as a reference to assist our customers in the selection of the Mitsubishi
semiconductor product best suited to the customer’s application; they do not convey any license under any
intellectual property rights, or any other rights, belonging to Mitsubishi Electric Corporation or a third party.
•Mitsubishi Electric Corporation assumes no responsibility for any damage, or infringement of any third-party’s
rights, originating in the use of any product data, diagrams, charts, programs, algorithms, or circuit application
examples contained in these materials.
•All information contained in these materials, including product data, diagrams, charts, programs and algorithms
represents information on products at the time of publication of these materials, and are subject to change by
Mitsubishi Electric Corporation without notice due to product improvements or other reasons. It is therefore
recommended that customers contact Mitsubishi Electric Corporation or an authorized Mitsubishi Semiconductor
product distributor for the latest product information before purchasing a product listed herein.
The information described here may contain technical inaccuracies or typographical errors. Mitsubishi Electric
Corporation assumes no responsibility for any damage, liability, or other loss rising from these inaccuracies or
errors.
Please also pay attention to information published by Mitsubishi Electric Corporation by various means, including
the Mitsubishi Semiconductor home page (http://www.MitsubishiElectric.com/).
•When using any or all of the information contained in these materials, including product data, diagrams, charts,
programs, and algorithms, please be sure to evaluate all information as a total system before making a final
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responsibility for any damage, liability or other loss resulting from the information contained herein.
•Mitsubishi Electric Corporation semiconductors are not designed or manufactured for use in a device or system
that is used under circumstances in which human life is potentially at stake. Please contact Mitsubishi Electric
Corporation or an authorized Mitsubishi Semiconductor product distributor when considering the use of a product
contained herein for any specific purposes, such as apparatus or systems for transportation, vehicular, medical,
aerospace, nuclear, or undersea repeater use.
•The prior written approval of Mitsubishi Electric Corporation is necessary to reprint or reproduce in whole or in part
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•If these products or technologies are subject to the Japanese export control restrictions, they must be exported
under a license from the Japanese government and cannot be imported into a country other than the approved
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Any diversion or re-export contrary to the export control laws and regulations of Japan and/or the country of
destination is prohibited.
•Please contact Mitsubishi Electric Corporation or an authorized Mitsubishi Semiconductor product distributor for
further details on these materials or the products contained therein.
