Micro-Electro-Magnetical Tech Co. SCHOTTKY DIE SPECIFICATION TYPE: SMBR8100 Single Anode General Description: 100 V 8 A ( Super Low Ir) ELECTRICAL CHARACTERISTICS DC Blocking Voltage: Ir=1mA(for wafer form) Ir=0.5mA (for dice form) Average Rectified Forward Current Maximum Instantaneous Forward Voltage @ 8 Amperes, Ta=25C Maximum Instantaneous Reverse Voltage VR= 100 Volt, Ta=25C Maximum Junction Capacitance @ 0V, 1MHZ MAXIMUM RATINGS Nonrepetitive Peak Surge Current Operating Junction Temperature Storage Temperatures SYM VRRM Spec. Limit 100 Die Sort 105 IFAV 8 VF MAX 0.91 0.9 Volt IR MAX 0.08 0.07 mA Amp Cj MAX IFSM Tj TSTG UNIT Volt pF 150 -65 to +125 -65 to +125 Amp C C Specification apply to die only. Actual performance may degrade when assembled. MEMT does not guarantee device performance after assembly. Data sheet information is subjeced to change without notice. DICE OUTLINE DRAWING A C ITEM Die Size Top Metal Pad Size Passivation Seal Thickness (Min) Thickness (Max) um2 2220 2120 2140 254 305 Mil2 87.40 83.5 84.3 10 12 PS: B Top-side Metal D DIM A B C D SiO2 Passivation P+ Guard Ring Back-side Metal (1)Cutting street width is around 80um(3.14mil). (2)Both of top-side and back-side metals are Ti/Ni/Ag.