April 1996 NDP4060L / NDB4060L N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features These logic level N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulses in the avalanche and commutation modes. These devices are particularly suited for low voltage applications such as automotive, DC/DC converters, PWM motor controls, and other battery powered circuits where fast switching, low in-line power loss, and resistance to transients are needed. 15A, 60V. RDS(ON) = 0.1 @ VGS = 5V Low drive requirements allowing operation directly from logic drivers. VGS(TH) < 2.0V. Critical DC electrical parameters specified at elevated temperature. Rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppressor. 175C maximum junction temperature rating. High density cell design for extremely low RDS(ON). TO-220 and TO-263 (D2PAK) package for both through hole and surface mount applications. ________________________________________________________________________________ D G S Absolute Maximum Ratings T C = 25C unless otherwise noted Symbol Parameter NDP4060L VDSS Drain-Source Voltage 60 V VDGR Drain-Gate Voltage (RGS < 1 M) 60 V VGSS Gate-Source Voltage - Continuous 16 V - Nonrepetitive (tP < 50 s) ID Drain Current NDB4060L 25 - Continuous 15 - Pulsed 45 PD Total Power Dissipation @ TC = 25C TJ,TSTG Operating and Storage Temperature TL Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds Derate above 25C (c) 1997 Fairchild Semiconductor Corporation Units A 50 W 0.33 W/C -65 to 175 C 275 C NDP4060L Rev. B / NDB4060L Rev. C Electrical Characteristics (TC = 25C unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units 40 mJ 15 A 250 A DRAIN-SOURCE AVALANCHE RATINGS (Note 1) W DSS Single Pulse Drain-Source Avalanche Energy IAR Maximum Drain-Source Avalanche Current VDD = 25 V, ID = 15 A OFF CHARACTERISTICS BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 A IDSS Zero Gate Voltage Drain Current VDS = 60 V, VGS = 0 V 60 V 1 mA IGSSF Gate - Body Leakage, Forward VGS = 16 V, VDS = 0 V 100 nA IGSSR Gate - Body Leakage, Reverse VGS = -16 V, VDS= 0 V -100 nA V TJ =125C ON CHARACTERISTICS (Note 1) VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 A TJ =125C RDS(ON) Static Drain-Source On-Resistance 1 1.5 2 0.65 1.1 1.5 VGS = 5 V, ID = 7.5 A TJ =125C VGS = 10 V, ID = 15 A ID(on) On-State Drain Current VGS = 5 V, VDS = 10 V 15 gFS Forward Transconductance VDS = 10 V, ID = 7.5 A 3 0.085 0.1 0.14 0.16 0.07 0.08 A 8 S DYNAMIC CHARACTERISTICS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance VDS = 25 V, VGS = 0 V, f = 1.0 MHz 510 600 pF 170 200 pF 50 100 pF 9 20 nS 151 250 nS 35 100 nS 61 150 nS 11 17 nC SWITCHING CHARACTERISTICS (Note 1) tD(on) Turn - On Delay Time tr Turn - On Rise Time tD(off) Turn - Off Delay Time tf Turn - Off Fall Time Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge VDD = 30 V, ID = 15 A, VGS = 5 V, RGEN = 51 , RGS = 51 VDS = 48 V, ID = 15 A, VGS = 5 V 2 nC 6.1 nC NDP4060L Rev. B / NDB4060L Rev. C Electrical Characteristics (TC = 25C unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units DRAIN-SOURCE DIODE CHARACTERISTICS IS Maximum Continuos Drain-Source Diode Forward Current 15 A ISM Maximum Pulsed Drain-Source Diode Forward Current 45 A VSD Drain-Source Diode Forward Voltage 0.95 1.3 V 0.88 1.2 51 100 ns 3.6 7 A 3 C/W 62.5 C/W VGS = 0 V, IS = 7.5 A (Note 1) TJ = 125C trr Reverse Recovery Time Irr Reverse Recovery Current VGS = 0 V, I F = 15 A, dI F /dt = 100 A/s THERMAL CHARACTERISTICS RJC Thermal Resistance, Junction-to-Case RJA Thermal Resistance, Junction-to-Ambient Note: 1. Pulse Test: Pulse Width < 300 s, Duty Cycle < 2.0%. NDP4060L Rev. B / NDB4060L Rev. C Typical Electrical Characteristics 2 30 6.0 25 V 1.8 20 R DS(on), NORMALIZED 5.0 4.5 15 4.0 3.5 10 3.0 5 DRAIN-SOURCE ON-RESISTANCE ID , DRAIN-SOURCE CURRENT (A) V GS = 10V GS = 3.0V 3.5 4.0 1.6 4.5 1.4 5.0 1.2 6.0 1 10 0.8 2.5 0 0.6 0 1 2 3 V DS , DRAIN-SOURCE VOLTAGE (V) 4 0 5 Figure 1. On-Region Characteristics R DS(on), NORMALIZED 1.6 1.4 1.2 1 0.8 0.6 -25 0 25 50 75 100 125 TJ , JUNCTION TEMPERATURE (C) 150 DRAIN-SOURCE ON-RESISTANCE R DS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 1.8 TJ = 125C 2 1.5 25C 1 0.5 175 -55C 0 5 10 15 20 ID , DRAIN CURRENT (A) 25 30 Figure 4. On-Resistance Variation with Drain Current and Temperature 1.2 V DS = 10V T = -55C J 25C 125C V th, NORMALIZED 16 12 8 4 1 2 V GS 3 4 5 , GATE TO SOURCE VOLTAGE (V) Figure 5. Transfer Characteristics 6 GATE-SOURCE THRESHOLD VOLTAGE 20 I D , DRAIN CURRENT (A) 30 V GS = 5 V Figure 3. On-Resistance Variation with Temperature 0 25 2.5 I D = 7.5A VGS = 5V 0.4 -50 10 15 20 I D , DRAIN CURRENT (A) Figure 2. On-Resistance Variation with Gate Voltage and Drain Current 2.2 2 5 VDS = V GS 1.1 I D = 250A 1 0.9 0.8 0.7 0.6 -50 -25 0 25 50 75 100 TJ , JUNCTION TEMPERATURE (C) 125 150 Figure 6. Gate Threshold Variation with Temperature NDP4060L Rev. B / NDB4060L Rev. C Typical Electrical Characteristics (continued) 20 10 I D = 250A 1.1 1.075 1.05 1.025 1 0.975 0.95 1 0.5 -25 0 TJ 25 50 75 100 125 , JUNCTION TEMPERATURE (C) 150 175 0.01 1.4 10 I D = 7.5A 500 C oss 200 100 C rss f = 1 MHz V GS = 0V V DS = 12V 48V VGS , GATE-SOURCE VOLTAGE (V) C iss CAPACITANCE (pF) 0.4 0.6 0.8 1 1.2 VSD , BODY DIODE FORWARD VOLTAGE (V) Figure 8. Body Diode Forward Voltage Variation with Current and Temperature 1000 8 24V 6 4 2 0 0.2 0.5 V DS 1 2 5 10 , DRAIN TO SOURCE VOLTAGE (V) 20 0 50 4 t on t d(on) R GS 16 t d(off) tf 90% 90% VOUT VO U T 10% 10% INVERTED DUT G 20 to f f tr RL D R GEN 12 Figure 10. Gate Charge Characteristics V DD VIN 8 Q g , GATE CHARGE (nC) Figure 9. Capacitance Characteristics VGEN -55C 0.1 0.001 0.2 1500 20 0.1 T J = 125C 25C Figure 7. Breakdown Voltage Variation with Temperature 50 V GS = 0V S 0.925 0.9 -50 5 I , REVERSE DRAIN CURRENT (A) BV DSS , NORMALIZED DRAIN-SOURCE BREAKDOWN VOLTAGE 1.15 1.125 90% S V IN 50% 50% 10% PULSE W IDTH Figure 11. Switching Test Circuit Figure 12. Switching Waveforms NDP4060L Rev. B / NDB4060L Rev. C Typical Electrical Characteristics (continued) 12 70 TJ = -55C 10 50 10 ID , DRAIN CURRENT (A) 25C 8 125C 6 4 2 RD 20 O S( LIM N) IT 1m 10 10 5 50 V GS = 10V DC SINGLE PULSE 0u s s ms ms o R JC = 3 C/W T C = 25C 1 g FS , TRANSCONDUCTANCE (SIEMENS) V DS = 10V 0 0 4 8 12 I D , DRAIN CURRENT (A) 16 20 Figure 13. Transconductance Variation with Drain Current and Temperature 0.5 1 2 5 10 30 V DS , DRAIN-SOURCE VOLTAGE (V) 50 70 Figure 14. Maximum Safe Operating Area r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE 1 0.5 D = 0.5 0.3 R JC (t) = r(t) * RJC R JC = 3.0 C/W 0.2 0.2 0.1 0.1 P(pk) 0.05 0.05 t1 0.02 0.03 0.02 Single Pulse 0.01 0.00001 t2 TJ - T C = P * R JC (t) Duty Cycle, D = t1 /t2 0.01 0.00005 0.0001 0.0005 0.001 0.005 t 1 ,TIME 0.01 0.05 0.1 0.5 1 Figure 15. Transient Thermal Response Curve NDP4060L Rev. B / NDB4060L Rev. C