April 1996
NDP4060L / NDB4060L
N-Channel Logic Level Enhancement Mode Field Effect Transistor
General Description Features
________________________________________________________________________________
Absolute Maximum Ratings TC = 25°C unless otherwise noted
Symbol Parameter NDP4060L NDB4060L Units
VDSS Drain-Source Voltage 60 V
VDGR Drain-Gate Voltage (RGS < 1 MΩ)60 V
VGSS Gate-Source Voltage - Continuous ± 16 V
- Nonrepetitive (tP < 50 µs) ± 25
IDDrain Current - Continuous 15 A
- Pulsed 45
PDTotal Power Dissipation @ TC = 25°C50 W
Derate above 25°C0.33 W/°C
TJ,TSTG Operating and Storage Temperature -65 to 175 °C
TLMaximum lead temperature for soldering
purposes, 1/8" from case for 5 seconds 275 °C
NDP4060L Rev. B / NDB4060L Rev. C
These logic level N-Channel enhancement mode power
field effect transistors are produced using Fairchild's
proprietary, high cell density, DMOS technology. This
very high density process has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulses in the
avalanche and commutation modes. These devices are
particularly suited for low voltage applications such as
automotive, DC/DC converters, PWM motor controls,
and other battery powered circuits where fast switching,
low in-line power loss, and resistance to transients are
needed.
15A, 60V. RDS(ON) = 0.1Ω @ VGS = 5V
Low drive requirements allowing operation directly from logic
drivers. VGS(TH) < 2.0V.
Critical DC electrical parameters specified at elevated
temperature.
Rugged internal source-drain diode can eliminate the need
for an external Zener diode transient suppressor.
175°C maximum junction temperature rating.
High density cell design for extremely low RDS(ON).
TO-220 and TO-263 (D2PAK) package for both through hole
and surface mount applications.
S
D
G
© 1997 Fairchild Semiconductor Corporation
Electrical Characteristics (TC = 25°C unless otherwise noted)
Symbol Parameter Conditions Min Typ Max Units
DRAIN-SOURCE AVALANCHE RATINGS (Note 1)
WDSS Single Pulse Drain-Source Avalanche
Energy VDD = 25 V, ID = 15 A 40 mJ
IAR Maximum Drain-Source Avalanche Current 15 A
OFF CHARACTERISTICS
BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 µA60 V
IDSS Zero Gate Voltage Drain Current VDS = 60 V, VGS = 0 V 250 µA
TJ =125°C 1mA
IGSSF Gate - Body Leakage, Forward VGS = 16 V, VDS = 0 V 100 nA
IGSSR Gate - Body Leakage, Reverse VGS = -16 V, VDS= 0 V -100 nA
ON CHARACTERISTICS (Note 1)
VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 µA11.5 2V
TJ =125°C 0.65 1.1 1.5
RDS(ON) Static Drain-Source On-Resistance VGS = 5 V, ID = 7.5 A 0.085 0.1 Ω
TJ =125°C 0.14 0.16
VGS = 10 V, ID = 15 A 0.07 0.08
ID(on) On-State Drain Current VGS = 5 V, VDS = 10 V 15 A
gFS Forward Transconductance VDS = 10 V, ID = 7.5 A 3 8 S
DYNAMIC CHARACTERISTICS
Ciss Input Capacitance VDS = 25 V, VGS = 0 V,
f = 1.0 MHz 510 600 pF
Coss Output Capacitance 170 200 pF
Crss Reverse Transfer Capacitance 50 100 pF
SWITCHING CHARACTERISTICS (Note 1)
tD(on) Turn - On Delay Time VDD = 30 V, ID = 15 A,
VGS = 5 V, RGEN = 51 Ω,
RGS = 51 Ω
9 20 nS
trTurn - On Rise Time 151 250 nS
tD(off) Turn - Off Delay Time 35 100 nS
tfTurn - Off Fall Time 61 150 nS
QgTotal Gate Charge VDS = 48 V,
ID = 15 A, VGS = 5 V 11 17 nC
Qgs Gate-Source Charge 2nC
Qgd Gate-Drain Charge 6.1 nC
NDP4060L Rev. B / NDB4060L Rev. C
Electrical Characteristics (TC = 25°C unless otherwise noted)
Symbol Parameter Conditions Min Typ Max Units
DRAIN-SOURCE DIODE CHARACTERISTICS
ISMaximum Continuos Drain-Source Diode Forward Current 15 A
ISM Maximum Pulsed Drain-Source Diode Forward Current 45 A
VSD Drain-Source Diode Forward Voltage VGS = 0 V, IS = 7.5 A (Note 1) 0.95 1.3 V
TJ = 125°C 0.88 1.2
trr Reverse Recovery Time VGS = 0 V, I F = 15 A,
dI F /dt = 100 A/µs 51 100 ns
Irr Reverse Recovery Current 3.6 7A
THERMAL CHARACTERISTICS
RθJC Thermal Resistance, Junction-to-Case 3°C/W
RθJA Thermal Resistance, Junction-to-Ambient 62.5 °C/W
Note:
1. Pulse Test: Pulse Width < 300 µs, Duty Cycle < 2.0%.
NDP4060L Rev. B / NDB4060L Rev. C
NDP4060L Rev. B / NDB4060L Rev. C
012345
0
5
10
15
20
25
30
V , DRAIN-SOURCE VOLTAGE (V)
I , DRAIN-SOURCE CURRENT (A)
V = 10V
GS
DS
D
6.0
5.0
4.5
3.5
4.0
3.0
2.5
-50 -25 0 25 50 75 100 125 150 175
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
2
2.2
T , JUNCTION TEMPERATURE (°C)
DRAIN-SOURCE ON-RESISTANCE
J
V = 5V
GS
I = 7.5A
D
R , NORMALIZED
DS(ON)
-50 -25 025 50 75 100 125 150
0.6
0.7
0.8
0.9
1
1.1
1.2
T , JUNCTION TEMPERATURE (°C)
GATE-SOURCE THRESHOLD VOLTAGE
I = 250µA
D
V = V
DS GS
J
V , NORMALIZED
th
0 5 10 15 20 25 30
0.6
0.8
1
1.2
1.4
1.6
1.8
2
I , DRAIN CURRENT (A)
DRAIN-SOURCE ON-RESISTANCE
D
R , NORMALIZED
DS(on)
V = 3.0V
GS
6.0
10
3.5
4.0
4.5
5.0
0 5 10 15 20 25 30
0.5
1
1.5
2
2.5
I , DRAIN CURRENT (A)
DRAIN-SOURCE ON-RESISTANCE
T = 125°C
J
-55°C
D
V = 5 V
GS
25°C
R , NORMALIZED
DS(on)
Typical Electrical Characteristics
Figure 1. On-Region Characteristics Figure 2. On-Resistance Variation with Gate Voltage
and Drain Current
Figure 3. On-Resistance Variation
with Temperature Figure 4. On-Resistance Variation with Drain
Current and Temperature
Figure 5. Transfer Characteristics Figure 6. Gate Threshold Variation with
Temperature
123456
0
4
8
12
16
20
V , GATE TO SOURCE VOLTAGE (V)
I , DRAIN CURRENT (A)
V = 10V
DS
GS
D
T = -55°C
J25°C 125°C
NDP4060L Rev. B / NDB4060L Rev. C
-50 -25 025 50 75 100 125 150 175
0.9
0.925
0.95
0.975
1
1.025
1.05
1.075
1.1
1.125
1.15
T , JUNCTION TEMPERATURE (°C)
DRAIN-SOURCE BREAKDOWN VOLTAGE
I = 250µA
D
BV , NORMALIZED
DSS
J0.2 0.4 0.6 0.8 11.2 1.4
0.001
0.01
0.1
0.5
1
5
10
20
V , BODY DIODE FORWARD VOLTAGE (V)
I , REVERSE DRAIN CURRENT (A)
T = 125°C
J25°C -55°C
V = 0V
GS
SD
S
0 4 8 12 16 20
0
2
4
6
8
10
Q , GATE CHARGE (nC)
V , GATE-SOURCE VOLTAGE (V)
g
GS
I = 7.5A
DV = 12V
DS
24V
48V
0.1 0.2 0.5 1 2 5 10 20 50
20
50
100
200
500
1000
1500
V , DRAIN TO SOURCE VOLTAGE (V)
CAPACITANCE (pF)
DS
C
iss
f = 1 MHz
V = 0V
GS
C
oss
C
rss
Figure 7. Breakdown Voltage Variation with
Temperature Figure 8. Body Diode Forward Voltage Variation
with Current and Temperature
Figure 9. Capacitance Characteristics Figure 10. Gate Charge Characteristics
Figure 11. Switching Test Circuit Figure 12. Switching Waveforms
Typical Electrical Characteristics (continued)
G
D
S
VDD
RGS
RL
VOUT
VIN
DUT
R
VGEN
GEN 10%
50%
90%
10%
90%
90%
50%
VIN
VOUT
on off
d(off) f
r
d(on)
t t
ttt
t
INVERTED
10%
PULSE WIDTH
NDP4060L Rev. B / NDB4060L Rev. C
0 4 8 12 16 20
0
2
4
6
8
10
12
I , DRAIN CURRENT (A)
g , TRANSCONDUCTANCE (SIEMENS)
T = -55°C
J
25°C
D
FS
V = 10V
DS
125°C
1 2 5 10 30 50 70
0.5
1
5
10
20
50
70
V , DRAIN-SOURCE VOLTAGE (V)
I , DRAIN CURRENT (A)
D
DC
RDS(ON) LIMIT
DS
100us
1ms
10ms
50ms
V = 10V
SINGLE PULSE
R = 3 C/W
T = 25°C
GS
C
θJC o
Figure 13. Transconductance Variation with
Drain Current and Temperature Figure 14. Maximum Safe Operating Area
Figure 15. Transient Thermal Response Curve
Typical Electrical Characteristics (continued)
0.00001 0.00005 0.0001 0.0005 0.001 0.005 0.01 0.05 0.1 0.5 1
0.01
0.02
0.03
0.05
0.1
0.2
0.3
0.5
1
t ,TIME
TRANSIENT THERMAL RESISTANCE
Single Pulse
D = 0.5
0.1
0.05
0.02
0.01
0.2
Duty Cycle, D = t /t
1 2
R (t) = r(t) * R
R = 3.0 °C/W
θJC
θJC
θJC
T - T = P * R (t)
θJC
C
J
P(pk)
t
1 t
2
r(t), NORMALIZED EFFECTIVE
1
