T4-LDS-0218, Rev. 1 (111513) ©2011 Microsemi Corporation Page 1 of 5
1N6638, 1N6642, 1N6643
Available on
commercial
versions
VOIDLESS HERMETICALLY SEALED
SWITCHING DIODES
Qualified per MIL-PRF-19500/578
Quali f i ed Lev els:
JAN, JANT X,
JANTX V and JANS
DESCRIPTION
The
se popular JEDEC registered switching/signal diodes are military qualified and available
with internal metallurgical bonded construction. Thes e small low capacitance diodes wit h very
fast s witc h in g sp eed s are h erm et ic ally seal ed an d b on d ed in t o a “D” package. They may b e
u sed in a vari et y o f fas t s wi tc h in g ap p li cat ion s inc lud ing com put ers and p eri ph eral equ i pm ent
such as magnetic cores, thin-film memories, plated-wire memories, as well as decoding or
encoding application s, etc. Micros emi also offers a variety of other s w itchi ng/signal diodes.
“D” Package
Also available in:
“BSQ ME LF or
D-5B Package
(s urf ace mount )
1N6638US_42US_43US
Important: For the latest infor mation, vis it our website http://www.microsemi.com.
FEATURES
JEDEC registered 1N6638, 1N6642, and 1N6643.
Ultra fast recovery time.
Very low capacitance.
Metallurgically bonded.
Non-cavity glass package.
JAN, JANTX, JANTXV and JANS qualifications are available per MIL-PRF-19500/578.
Replacements for 1N4148, 1N4148-1, 1N4150, 1N4150-1, and 1N914.
RoHS compliant devices available (commerci al grade only).
APPLICATIONS / BENE FITS
Small size for high dens ity m ounting using flexible thru-hole leads (see package illustration).
Ideal for:
High frequency data lines
RS-232 & RS–422 Interface Networks
Ethernet 10 Base T
Switch ing core driv ers
LAN
Computers
MAXIMUM RAT ING S @ TA = +25 oC unless other wise not ed.
MSCLawrence
6 Lake Street,
Lawrence, MA 01841
1-800-446-1158
Tel: (978) 620-2600
Fax: (978) 689-0803
MSCIreland
Gort Road Business Park,
Ennis, Co. Clare, Ireland
Tel: +353 (0) 65 6840044
Fax: +353 (0) 65 6822298
Website:
www.microsemi.com
Parameters/Test Conditions
Symbol
Value
Unit
Junct ion and Stor age Temp
TJ and TSTG
-65 to +175
oC
Thermal Resistance Junction-to-Lead = 0.375 inch (1)
RӨJL
150
oC/W
Thermal Resistance Junction-to-Ambient (1)
RӨJA
250
oC/W
Peak Forward Surge Current @ TA = +25
o
C
(Test pulse = 8.3 ms, half-sine wave.)
IFSM 2.5 A
Average Rectified Forw ard Current @ TA = +75
o
C
(Derate at 3.0 mA/
o
C above TL = +75
o
C @ L = 3/8”)
IO 300 mA
Breakdown Voltage: 1N6638
1N6642
1N6643
VBR 150
100
75
V
Working Peak Reverse Voltage: 1N6638
1N6642
1N6643
VRWM 125
75
50
V
NOTES: 1. TA = +75 °C on printed circuit board (PCB), PCB = FR4 - .0625 inch (1.59 mm) 1-layer 1-Oz Cu,
horizontal, in still air; pads for axial = .092 inch (2.34 mm) diameter, str ip = .030 inch (0.76 mm) x 1 inch
(25.4 mm) long, lead length L ≤ .187 inch (≤ 4.75 mm); RΘJA w ith a defin ed PCB th ermal resistance
condition included, is measured at IO = 300 mA.
T4-LDS-0218, Rev. 1 (111513) ©2011 Microsemi Corporation Page 2 of 5
1N6638, 1N6642, 1N6643
CASE: Voidless hermetically sealed hard glass.
TERMINALS: Tin-lead plate with >3% lead. Solder dip is av ailable upon r eques t.
MARKING: Body painted and alpha numeric.
POLARITY: Cathode i ndicated by band.
Tape & Reel option: Standard per EIA-296. Consult fac tory for quantities.
See Package Dimensions on last page.
JAN 1N6638 (e3)
Reliability Level
JAN = JAN Level
JANTX = JANTX Level
JANTXV = JANTXV Level
JANS = JANS Level
Blank = commercial
RoHS Compliance
e3 = RoHS compliant (available
in commercial grade only)
Blank = non-RoHS compliant
JEDEC type number
See Electric al Characteristics
table
SYMBOLS & DEFINITIONS
Symbol
Definition
VBR Minimum Breakdown Voltage: The minimum voltage the device will exhibit at a specified current.
VRWM
Working Peak Reverse Voltage: The maximum peak voltage that can be applied over the operating temperature
range.
VF Maxim um Forw ard Voltage: The maximum forward voltage the device will exhibit at a specified current.
IF Forward Current: The forward current dc value, no al ternating component.
IR
Maximum Reverse Current: The maxim um reverse (leakage) current that will flow at the specified voltage and
temperature.
C Capacitance: The capacitance in pF at a frequency of 1 MHz and specified voltage.
trr
Reverse Recovery Time: The tim e interval between the instant the current passes through zero when changing from
the forward directi on to the reverse direction and a specified recovery decay point after a peak reverse current is
reached.
TYPE
NUMBER
MAXIMUM
FORWARD
VOLTAGE
VF @ IF
MAXIMUM DC REVERSE CURRENT
IR1 IR2 IR3 IR4
REVERSE
RECOVERY
TIME
trr
(Note 1)
MAXIMUM
FORWARD
RECOVERY
V O LTAG E AN D
TIME
IF=200mA, tr=1ns
MAXIMUM
JUNCTION
CAPACITANCE
f = 1 MHz
Vsig = 50 mV
(p-p)
V
R
=
20 V
V
R
=V
RWM
V
R
=20 V
TA=
+150 oC
V
R
=V
RWM
TA=
+150 oC VFRM tfr VR=0 V VR=1.5 V
V @ mA
V @ mA
nA
nA
µA
µA
ns
V
ns
pf
pf
1N6638
0.8 V @ 10 mA
1.1 V @ 200 mA
35
500
50
100
4.5
5.0
20
2.5
2.0
1N6642
0.8 V @ 10 mA
1.2 V @ 100 mA
25
500
50
100
5.0
5.0
20
5.0
2.8
1N6643
0.8 V @ 10 mA
1.2 V @ 100 mA
50
500
75
100
6.0
5.0
20
5.0
2.8
NOTE: 1. Reverse Recovery Time Test Con ditions – IF=IR=10 mA , IR(REC) = 1.0 mA, C=3 pF, RL = 100 ohms.
T4-LDS-0218, Rev. 1 (111513) ©2011 Microsemi Corporation Page 3 of 5
1N6638, 1N6642, 1N6643
TA (oC) A m bient Temp er ature
FIGURE 1
Temperature Cur r ent Deratin g
Ti me (s)
FIGURE 2
Max i mum Th er mal Imped anc e at TA = 55 oC
Ther m al Im ped ance ( oC/W)
Sinewave Operation Maximum IO Rating (mA)
T4-LDS-0218, Rev. 1 (111513) ©2011 Microsemi Corporation Page 4 of 5
1N6638, 1N6642, 1N6643
Ti me (s)
FIGURE 3
Max i mum Th er mal Imped anc e at TL = 25 oC
Ther m al Im ped ance ( oC/W)
T4-LDS-0218, Rev. 1 (111513) ©2011 Microsemi Corporation Page 5 of 5
1N6638, 1N6642, 1N6643
NOTES:
1. Dimensions are in inches. Millimeters are given for general information only.
2. Dimension BD shall be measured at the largest diameter.
3. The specified lead diameter applies in the zone between .050 inch (1.27 mm) fr om the diode body to the end of the lead. Outside of
this zone lead shall not exceed BD.
4. In accordance with ASME Y14.5M, diameters are equivalent to Φx symbology.
DIM
INCH
MILLIMETERS
NOTES
MIN
MAX
MIN
MAX
BD
0.056
0.080
1.42
2.03
2
BL
0.130
0.180
3.30
4.57
LD
0.018
0.022
0.46
0.56
3
LL 1.00 1.50 25.40 38.10