SIEMENS CFY67 HiRel K-Band GaAs Super Low Noise HEMT HiFfel Discrete and Microwave Semiconductor 4A 3 @ Pseudo-morphic AlGaAs/InGaAs/GaAs HEMT For professional super low-noise amplifiers For frequencies from 500 MHz to > 20 GHz Hermetically sealed microwave package Super low noise figure, high associated gain -@S@ Space Qualified ESA/SCC Detail Spec. No.: 5613/004, Type Variant No.s 01 to 04, 05 foreseen (tbc.) ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking | Ordering Code | Pin Configuration Package 1 2 3 4 CFY67-06 (ql) - see below G S$ DBD | S |Micro-X CFY67-08 (ql) CFY67-08P (ql) CFY67-10 (ql) CFY67-10P (ql) CFY67-nnl: specifies gain and output power levels (see electrical characteristics) (ql) Quality Level: PP: Professional Quality, Ordering Code: Q62702F1699 H: High Rel Quality, Ordering Code: on request S$: Space Quality, Ordering Gode: on request ES: ESA Space Quality, Ordering Code: Q62702F1699 (see order instructions for ordering example) Semiconductor Group 1of9 Draft D, Jul. 98SIEMENS CFY67 Maximum Ratings Parameter Symbol | Values Unit Drain-source voltage Vos 3.5 Vv Drain-gate voltage Voc 4.5 Vv Gate-source voltage (reverse /forward) | V.. -3...4+0.5 Vv Drain current I, 60 mA Gate forward current I, 2 mA RF Input Power, C- and X-Band P.., +10 dBm Junction temperature T, 150 C Storage temperature range Tag - 65... + 150 C Total power dissipation P.., 200 mW Soldering temperature * T.., 230 C Thermal Resistance Junction-soldering point Ris < 515 (tbe.) KAW Notes.: 1) For V,, <2 V. For V,, > 2 V, derating is required. DS 2) AtT, = + 47 C. For 1, >+ 47 C derating is required. 3) During 15 sec. maximum. The same terminal shall not be resoldered unt il 3 minutes have elapsed. Semiconductor Group 2o0f9 Draft D, Jul. 98SIEMENS CFY67 Electrical Characteristics (at T,=25C; unless otherwise specified) Parameter Symbol Values Unit min. typ. max. DC Characteristics Drain-source saturation current bes 15 30 60 mA Vis =2V.V,,=0V Gate threshold voltage Voth 0.2 0.7 2.0 Vv Vis=2V, =1 mA Drain current at pinch-off op - < 50 - LA Vig = 1 5V,V,,=-3V Gate leakage current at pinch-off le, - < 50 200 LA Vig=l5V,V,,=-3V Transconductance Dns 50 65 - ms Vie =2V,1,=15 mA Gate leakage current at operation lots - <05 |2 LA Vis =2V.1,=15 mA Thermal resistance Rivus - 450 - K/W junction to soldering point Semiconductor Group 3 of 9 Draft D, Jul. 98SIEMENS CFY67 Electrical Characteristics (continued) Parameter Symbol Values Unit min. typ. max. AC Characteristics Noise figure NF dB Vig=2V,1,= 15 mA, f = 12 GHz CFY67-06 0.5 0.6 CFY67-08, -08P 07 0.8 CFY67-10, 10P 0.9 1.0 Associated gain. G, dB Vig = 2 V,1,= 15 mA, f = 12 GHz CFY67-06 11.5 12.5 CFY67-08, -O8P 11.0 [11.5 CFY67-10, 10P 10.5 [11.0 Output power at 1 dB gain compression | P,,, dBm Vig = 2 V, 1, = 20 mA, f = 12 GHz CFY67-06, -08, -10 11.0 CFY67-08P, -10P 10.0 [11.0 Notes.: 1) Noise figure / sssociated gain characteristics given for minimum noise figure matching conditions (fixed generic matching, no fine-tuning). 2) Output power characteristics given for optimum output power matching conditions (fixed generic matching, no fine-tuning). Semiconductor Group 4of9 Draft D, Jul. 98SIEMENS CFY67 Typical Common Source S-Parameters f [Sii| <Sii |S21| <S821 |812| <S1i2 |822| <S22 k-Fact. S,,/S,, MAG [GHz] [magn] [angle] [magn] [angle] [magn] [angle] [magn] [angle] [magn] [dB] [dB] 05 0963 -15 5,315 165 00,0111 74 0,655 -14 0,40 26,8 10 O938 -23 5,182 159 00,0225 68 0,639 -18 0,39 23,6 15 0913 -33 5,060 150 0,0317 62 0,625 -23 0,42 22,0 2,0 0,889 -42 4,940 142 0,0411 57 O,611 -28 0,43 20,8 2,5 0,865 -52 4,824 133 0,0509 53 0,596 -35 0,43 19,8 3,0 0,844 -62 4,715 124 0,0585 46 0,582 -41 0,45 19,1 3,5 0,823 -72 4,591 115 0,0650 41 0,567 -47 0,47 18,5 40 0,800 -81 4,450 107 0,0714 36 0,552 -53 0,50 17,9 45 0,779 -91 4,319 99 00,0768 31 0,534 -60 0,52 17,5 5,0 0,761 -100 4183 91 0,0811 25 0,520 -66 0,54 17,1 5,5 0,743 -109 4043 83 0,0850 20 0,500 -72 0,58 16,8 6,0 0,725 -117 3,906 75 0,0885 15 0,490 -77 0,60 16,4 6,5 0,708 -125 3,769 68 00,0917 11 0,477 -83 0,63 16,1 7,0 0,690 -132 3,640 61 0,0942 7 0,467 -88 0,67 15,9 7,5 0,673 -139 3,529 54 0,0962 3 0,455 -93 0,71 15,6 8,0 0,656 -146 3,427 48 0,0978 -1 0,442 -97 0,76 15,4 85 0,640 -153 3,344 41 00,0998 -5 0430 -101 0,79 15,3 90 0625 -160 3,271 34 0,1010 -9 0,417 -104 0,84 15,1 95 0611 -168 3,202 28 0,1027 -12 0,406 -108 0,87 14,9 10.0 O97 -175 3,143 21 O,1033 -16 0,393 -113 0,91 14,8 10,5 0,586 177 3,089 15 0,1044 -20 0,381 -118 0,94 14,7 11,0 0,576 169 3,041 8 0,1056 -24 0,370 -123 0,96 14,6 11,5 0,564 161 3,002 1 0,1068 -28 0,358 -129 0,98 14,5 12,0 0,554 154 2960 -5 0O,1070 -32 0,351 -134 1,01 144 13,8 12,5 0,547 146 2,923 -12 0,1076 -36 0,343 -140 03 143 13,3 13,0 0,536 139 2,886 -19 0,1076 -41 0,336 -146 6 14,3 12,7 13,5 0,529 131 2,848 -26 0,1081 -45 0,330 -151 09 142 12,4 14,0 0,522 124 2,815 -33 0,1087 -50 0,325 -156 110 (14,1 12,1 14.5 0517 116 2,787 -40 0,1087 -55 0,320 -161 13 0614,1~=11,9 15,0 0,510 108 2,765 -46 0,1093 -60 0,315 -167 14 14,0 11,7 155 0,505 99 2,751 -54 0O,1090 -65 0,311 -172 16 14,0 11,6 16,0 0,502 91 2,735 -61 0,1090 -71 0,305 -177 18 14,0 11,4 165 0499 82 2,719 -68 0,1091 -77 0,301 177 19 140 11,3 17,0 0498 74 2,722 -75 0,1097 -82 0,297 172 1,19 139 11,3 17,5 0498 68 2,741 -80 0,1103 -87 0,294 168 1,18 140 11,4 18,0 0498 62 2,760 -84 0,1107 -90 0,290 165 1,17 140 11,5 _ eS ss ss so Semiconductor Group 5 of 9 Draft D, Jul. 98SIEMENS CFY67 Typical Common Source S-Parameters (continued) f |S11| <S11 |S21| <S21 |S12| <S12 |S22| <S22 k-Fact. S,/S, MAG [GHz] [mag] [ang] [mag] [ang] [mag] [ang] [mag] [ang] [mag] [cB] [cB] 05 0962 -13 6112 166 00111 76 0539 -15 042 274 1,0 0937 -22 5956 159 00211 69 0525 -19 042 245 1,5 0913 -33 5,810 150 0.0302 64 0511 -24 044 228 20 0,889 -41 5690 142 0.0394 58 0,498 -30 046 21,6 25 0,860 -51 5522 133 00484 53 0484 -36 048 206 3.0 0,834 -61 5,386 124 0.0567 48 0469 -43 O50 198 3,5 0,810 -71 5,236 116 0.0637 43 0456 -49 0,52 19,1 40 0,784 -80 5,067 107 0.0702 38 0,440 -55 O55 186 45 0,761 -90 4911 99 00760 33 0423 -61 O68 181 5.0 0,740 -99 4,752 91 0.0809 28 0,410 -67 0,60 17,7 5,5 0,720 -107 4586 84 0.0851 24 0397 -73 O63 17,3 6,0 0,701 -116 4,420 76 0.0889 19 0,385 -79 O66 17,0 65 0,682 -124 4260 69 0.0918 15 0,373 -84 069 16,7 7,0 0663 -131 4,107 62 0.0941 11 O362 -89 O73 164 7,5 0,644 -139 3,974 55 0.0962 7 40,351 -93 0,77 16,2 8.0 0627 -148 3,852 49 0.0980 3 0343 -98 O80 159 85 0,611 -157 3,747 42 0.0995 -1 0,333 -102 083 15,8 90 0,595 -165 3,659 35 0.1008 -5 0,323 -107 0,86 15,6 95 0581 -173 3,571 29 01022 -9 0313 -112 090 154 10,0 0567 178 3,497 22 0,10389 -13 0,303 -116 0,92 153 10,5 0556 170 3430 16 0,1049 -17 0,293 -121 095 15,1 11,0 0546 163 3,368 9 0,1064 -21 0,284 -127 0,98 15,0 11,5 0537 155 3317 3 0,1078 -26 0,274 -131 1,00 149 12.0 0528 149 3265 -4 0,1093 -30 0265 -135 1,02 148 13,8 12,5 0520 142 3216 -10 0,1105 -35 0,255 -139 1,05 146 13,3 13,0 0513 135 3,169 -17 01116 -39 0246 -143 1,07 145 129 13,5 0506 128 3,120 -24 0.1126 -44 0235 -146 1,10 144 125 14.0 0498 121 3,080 -30 0,1137 -49 0,225 -150 1,12 143 122 14,5 0492 113 3,044 -37 0.1151 -54 0215 -155 1,14 142 120 15,0 0489 106 3,014 -44 0.1160 -59 0,207 -159 1,15 14,1 11,8 - So ss sisi ss so so 15,5 0484 98 2,990 -51 O,1171 -65 0,200 -163 16 14,1 11,6 16,0 0485 91 2,967 -58 O,1185 -71 0,193 -167 17) =614,0 =11,5 16,5 0485 83 2945 -65 0,1197 -77 0,187 -171 17 13,9 11,4 17,0 0485 75 2,947 -71 0,1206 -82 0,182 -175 17 0 6613,9 11,4 17,5 0487 69 2961 -77 0,1215 -87 0,177 -178 16 13,9 11,5 18,0 0490 64 2979 -81 0,1230 -90 0,174 179 14 13,8 11,6 Semiconductor Group 6 of 9 Draft D, Jul. 98SIEMENS CFY67 Typical Common Source Noise-Parameters f NF Ain [Poet <D,,, R,, [GHz] [dB] [magn] [angle] [22] 1 0,29 0,756 14 15,60 2 0,30 0,690 28 14,65 3 0,34 0,643 43 13,56 4 0,38 0,606 58 12,10 5 0,41 0,578 73 10,53 6 0,46 0,553 87 8,86 7 0,50 0,534 102 7,16 8 0,55 0,518 116 5,62 9 0,60 0,505 131 4,29 10 0,64 0,495 145 3,23 11 0,69 0,486 159 2,53 12 0,73 0,476 173 2,22 13 0,78 0,467 -173 2,37 14 0,84 0,455 -160 2,96 15 0,88 0,443 -146 4,01 16 0,93 0,428 -132 5,47 17 0,99 0,412 -118 7,26 18 1,05 0,394 -103 9,61 Semiconductor Group 7ofg Draft D, Jul. 98SIEMENS CFY67 Order Instructions: Full type variant including quality level must be specified by the orderer. For HiRe/ Discrete and Microwave Semiconductors the ordering code specifies device family and quality level only. Ordering Form: Ordering Example: Ordering Code: @.......... CFY67 _ -(nnl) (ql) -(nnl) Noise Figure/Gain and/or Power Level (ql): Quality Level Ordering Code: Q62702F 1698 CFY67-08P ES For GFY67, Noise Figure/Gain/Power Level 08P: NF < 0.8 dB, G, > 11.0 dB, P,,, > 10 dBm @ 12 GHz in ESA Space Quality Level Further Informations: See our WWW-Pages: - Discrete and RF-Semiconductors (Small Signal Semiconductors) www.siemens.de/semiconductor/products/35/35.htm - HiRel Discrete and Microwave Semiconductors www .siemens.de/semiconductor/products/35/353 .htm Please contact also our marketing division : Tel.: Fax.: e-mail: Address: Semiconductor Group +4+89 6362 4480 +489 6362 5568 martin. wimmers@siemens-scg.com Siemens Semiconductors, High Frequency Products Marketing, P.O.Box 801709, D-81617 Munich 8ofg Draft D, Jul. 98SIEMENS CFY67 Micro-X Package _ 41,0240, $ ae KY 1 DN fr s FO {JF a! -4 b Nate Bow : | o T $ 1,78 39 * biz og = - Q al -_ o af. O1,6520,1 Semiconductor Group Published by Siemens Semiconductors, High Frequency Products Marketing, P.G.Box 801709, D-81617 Munich. Siemens AG 1998. All Rights Reserved. As far as patents or other rights of third parties are concerned, liability is only assumed for components per se, not for applications, processes and circuits implemented within components or assemblies. The information describes the type of component and shall not be considered as assured characteristics. Terms of delivery and rights to change design reserved. For questions on technology, delivery and prices please contact the Offices of Semiconductor Group in Germany or the Siemens Companies and Representatives woldwide (see address list). Due to technical requirements components may contain dangerous substances. For information on the type in question please contact your nearest Siemens Office, Semiconductor Group. Siemens Semiconductors is a certified CECC and Q89000 manufacturer (this includes ISO 9000). 9of9 Draft D, Jul. 98