June 2003 AO3413 P-Channel Enhancement Mode Field Effect Transistor General Description Features The AO3413 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch or in PWM applications. VDS (V) = -20V ID = -3 A RDS(ON) < 97m (VGS = -4.5V) RDS(ON) < 130m (VGS = -2.5V) RDS(ON) < 190m (VGS = -1.8V) D TO-236 (SOT-23) Top View G D G S S Absolute Maximum Ratings TA=25C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage TA=25C Continuous Drain Current A Pulsed Drain Current ID IDM TA=70C B Junction and Storage Temperature Range Alpha & Omega Semiconductor, Ltd. 8 V -15 1.4 W 0.9 TJ, TSTG C -55 to 150 Symbol t 10s Steady-State Steady-State A -2.4 PD TA=70C Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Lead C Units V -3 TA=25C Power Dissipation A Maximum -20 RJA RJL Typ 70 100 63 Max 90 125 80 Units C/W C/W C/W AO3413 Electrical Characteristics (TJ=25C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current IGSS VGS(th) ID(ON) Gate-Body leakage current Gate Threshold Voltage RDS(ON) gFS VSD IS On state drain current Static Drain-Source On-Resistance Conditions Min ID=-250A, VGS=0V VDS=-16V, VGS=0V -20 Rg SWITCHING PARAMETERS Qg Total Gate Charge Qgs Gate Source Charge Qgd Gate Drain Charge tD(on) tr VDS=0V, VGS=8V VDS=VGS ID=-250A VGS=-4.5V, VDS=-5V VGS=-4.5V, ID=-3A -0.3 -15 TJ=125C VGS=-2.5V, ID=-2.6A VGS=-1.8V, ID=-1A VDS=-5V, ID=-3A tD(off) tf trr Qrr 4 A -0.55 -5 100 -1 81 111 108 97 135 130 m 146 7 190 m -0.78 -1 -2 V A nA V A m S VGS=0V, VDS=-10V, f=1MHz 540 72 pF pF VGS=0V, VDS=0V, f=1MHz 49 12 pF VGS=-4.5V, VDS=-10V, ID=-3A 6.1 0.6 nC nC 1.6 10 nC ns 12 44 22 ns ns ns 21 7.5 ns nC Turn-On DelayTime Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time Units V TJ=55C Forward Transconductance IS=-1A,VGS=0V Diode Forward Voltage Maximum Body-Diode Continuous Current Output Capacitance Reverse Transfer Capacitance Gate resistance Max -1 DYNAMIC PARAMETERS Ciss Input Capacitance Coss Crss Typ VGS=-4.5V, VDS=-10V, RL=3.3, RGEN=3 IF=-3A, dI/dt=100A/s Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge IF=-3A, dI/dt=100A/s A: The value of R JA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25C. The value in any a given application depends on the user's specific board design. The current rating is based on the t 10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R JA is the sum of the thermal impedence from junction to lead RJL and lead to ambient. D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80 s pulses, duty cycle 0.5% max. 2 E. These tests are performed with the device mounted on 1 in FR-4 board with 2oz. Copper, in a still air environment with TA=25C. The SOA curve provides a single pulse rating. Alpha & Omega Semiconductor, Ltd. AO3413 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 6 15 -4.5V -3.0V VDS=-5V -2.5V -8V 4 10 -ID(A) -ID (A) -2.0V 2 5 125C VGS=-1.5V 25C 0 0 0 1 2 3 4 -VDS (Volts) Fig 1: On-Region Characteristics 5 0 200 1 1.5 -VGS(Volts) Figure 2: Transfer Characteristics 2 Normalized On-Resistance 1.8 VGS=-1.8V RDS(ON) (m) 0.5 150 VGS=-2.5V 100 VGS=-4.5V 50 VGS=-2.5V 1.6 VGS=-1.8V 1.4 VGS=-4.5V 1.2 1 0.8 0 2 4 6 0 25 -ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 50 75 100 125 150 175 Temperature (C) Figure 4: On-Resistance vs. Junction Temperature 1E+01 200 1E+00 ID=-4A 1E-01 -IS (A) RDS(ON) (m) 150 125C 100 25C 125C 1E-02 25C 1E-03 1E-04 1E-05 50 0 2 4 6 -VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage Alpha & Omega Semiconductor, Ltd. 8 1E-06 0.0 0.2 0.4 0.6 0.8 1.0 -VSD (Volts) Figure 6: Body-Diode Characteristics 1.2 AO3413 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 800 5 VDS=-10V ID=-3A Capacitance (pF) -VGS (Volts) 4 3 2 1 Ciss 600 400 Crss 200 Coss 0 0 0 2 4 6 8 0 -Qg (nC) Figure 7: Gate-Charge Characteristics 10 20 TJ(Max)=150C TA=25C 10s Power (W) 15 1ms RDS(ON) limited 0.1s 20 TJ(Max)=150C TA=25C 100s 10.0 15 -VDS (Volts) Figure 8: Capacitance Characteristics 100.0 -ID (Amps) 5 10ms 1.0 10 5 1s 10s DC 0 0.001 0.1 0.1 1 10 100 -VDS (Volts) ZJA Normalized Transient Thermal Resistance 1 0.1 1 100 1000 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse D=Ton/(Ton+Toff) TJ,PK=TA+PDM.ZJA.RJA RJA=90C/W PD 0.1 Ton Single Pulse 0.01 0.00001 10 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) 10 0.01 0.0001 0.001 0.01 0.1 1 T 10 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance Alpha & Omega Semiconductor, Ltd. 100 1000 SOT-23 Package Data SYMBOLS GAUGE PLANE PACKAGE MARKING DESCRIPTION SEATING PLANE A A1 A2 b C D E E1 e e1 L 1 DIMENSIONS IN MILLIMETERS MIN 1.00 0.00 1.00 0.35 0.10 2.80 2.60 1.40 --- --- 0.40 1 NOM --- --- 1.10 0.40 0.15 2.90 2.80 1.60 0.95 BSC 1.90 BSC --- 5 MAX 1.25 0.10 1.15 0.50 0.25 3.04 2.95 1.80 --- --- 0.60 8 NOTE: 1. LEAD FINISH: 150 MICROINCHES ( 3.8 um) MIN. THICKNESS OF Tin/Lead (SOLDER) PLATED ON LEAD 2. TOLERANCE 0.10 mm (4 mil) UNLESS OTHERWISE SPECIFIED 3. COPLANARITY : 0.10 mm 4. DIMENSION L IS MEASURED IN GAGE PLANE RECOMMENDATION OF LAND PATTERN SOT-23 PART NO. CODE PNDLN PART NO. CODE AO3411 AB NOTE: P N - PART NUMBER CODE. D - YAER AND WEEK CODE. L N - ASSEMBLY LOT CODE, FAB AND ASSEMBLY LOCATION CODE. Rev. A ALPHA & OMEGA SEMICONDUCTOR, INC. SOT-23 Carrier Tape SOT-23 Reel SOT-23 Tape Leader / Trailer & Orientation SOT-23 Tape and Reel Data