Symbol
VDS
VGS
IDM
TJ, TSTG
Symbol Ty
p
Max
70 90
100 125
RθJL 63 80
W
Maximum Junction-to-Lead CSteady-State °C/W
Thermal Characteristics
Parameter Units
Maximum Junction-to-Ambient At ≤ 10s RθJA
°C/W
Maximum Junction-to-Ambient ASteady-State °C/W
±8Gate-Source Voltage
Drain-Source Voltage -20
Continuous Drain
Current A
Maximum UnitsParameter
TA=25°C
TA=70°C
Absolute Maximum Ratings TA=25°C unless otherwise noted
V
V
-2.4
-15
Pulsed Drain Current B
Power Dissipation A
TA=25°C
Junction and Storage Temperature Range
A
PD
°C
1.4
0.9
-55 to 150
TA=70°C
ID
-3
AO3413
P-Channel Enhancement Mode Field Effect Transistor
June 2003
Features
VDS (V) = -20V
ID = -3 A
RDS(ON) < 97mΩ (VGS = -4.5V)
RDS(ON) < 130mΩ (VGS = -2.5V)
RDS(ON) < 190mΩ (VGS = -1.8V)
General Description
The AO3413 uses advanced trench technology to
provide excellent RDS(ON), low gate charge and
operation with gate voltages as low as 1.8V. This
device is suitable for use as a load switch or in PWM
applications.
S
G
D
TO-236
(SOT-23)
Top View
G
D
S
Alpha & Omega Semiconductor, Ltd.
AO3413
Symbol Min Typ Max Units
BVDSS -20 V
-1
TJ=55°C -5
IGSS ±100 nA
VGS(th) -0.3 -0.55 -1 V
ID(ON) -15 A
81 97
TJ=125°C 111 135
108 130 m
Ω
146 190 m
Ω
gFS 47 S
VSD -0.78 -1 V
IS-2 A
Ciss 540 pF
Coss 72 pF
Crss 49 pF
Rg12 Ω
Qg6.1 nC
Qgs 0.6 nC
Qgd 1.6 nC
tD(on) 10 ns
tr12 ns
tD(off) 44 ns
tf22 ns
trr 21 ns
Qrr 7.5 nC
Gate resistance VGS=0V, VDS=0V, f=1MHz
Turn-Off Fall Time
Maximum Body-Diode Continuous Current
Input Capacitance
Output Capacitance
Turn-On DelayTime
DYNAMIC PARAMETERS
IF=-3A, dI/dt=100A/µs
VGS=0V, VDS=-10V, f=1MHz
SWITCHING PARAMETERS
Total Gate Charge
VGS=-4.5V, VDS=-10V, ID=-3A
Gate Source Charge
Gate Drain Charge
Turn-On Rise Time
Turn-Off DelayTime
VGS=-4.5V, VDS=-10V, RL=3.3Ω,
RGEN=3Ω
mΩ
VGS=-2.5V, ID=-2.6A
IS=-1A,VGS=0V
VDS=-5V, ID=-3A
RDS(ON) Static Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
IDSS µA
Gate Threshold Voltage VDS=VGS ID=-250µA
VDS=-16V, VGS=0V
VDS=0V, VGS=±8V
Zero Gate Voltage Drain Current
Gate-Body leakage current
Electrical Characteristics (T
J=25°C unless otherwise noted)
STATIC PARAMETERS
Parameter Conditions
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge IF=-3A, dI/dt=100A/µs
Drain-Source Breakdown Voltage
On state drain current
ID=-250µA, VGS=0V
VGS=-1.8V, ID=-1A
VGS=-4.5V, VDS=-5V
VGS=-4.5V, ID=-3A
Reverse Transfer Capacitance
A: The value of R θJA is measured with the device mounted on 1in
2 FR-4 board with 2oz. Copper, in a still air environment with T
A =25°C. The
value in any a given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance
rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R θJA is the sum of the thermal impedence from junction to lead R
θJL and lead to ambient.
D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80 µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in
2 FR-4 board with 2oz. Copper, in a still air environment with T
A=25°C. The
SOA curve provides a single pulse rating.
Alpha & Omega Semiconductor, Ltd.
AO3413
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
0
5
10
15
012345
-VDS (Volts)
Fig 1: On-Region Characteristics
-ID (A)
VGS=-1.5V
-2.0V
-2.5V
-4.5V
-8V
-3.0V
0
2
4
6
0 0.5 1 1.5 2
-VGS(Volts)
Figure 2: Transfer Characteristics
-ID(A)
25°C
125°C
VDS=-5V
50
100
150
200
0246
-ID (A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
RDS(ON) (mΩ)
VGS=-1.8V
VGS=-2.5V
VGS=-4.5V
1E-06
1E-05
1E-04
1E-03
1E-02
1E-01
1E+00
1E+01
0.0 0.2 0.4 0.6 0.8 1.0 1.2
-VSD (Volts)
Figure 6: Body-Diode Characteristics
-IS (A)
25°C
125°C
0.8
1
1.2
1.4
1.6
1.8
0 25 50 75 100 125 150 175
Temperature (°C)
Figure 4: On-Resistance vs. Junction
Temperature
Normalized On-Resistance
VGS=-2.5V
VGS=-1.8V
VGS=-4.5V
50
100
150
200
02468
-VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
RDS(ON) (mΩ)
ID=-4A
25°C
125°C
Alpha & Omega Semiconductor, Ltd.
AO3413
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
0
1
2
3
4
5
02468
-Qg (nC)
Figure 7: Gate-Charge Characteristics
-VGS (Volts)
0
200
400
600
800
0 5 10 15 20
-VDS (Volts)
Figure 8: Capacitance Characteristics
Capacitance (pF)
Ciss
Coss
Crss
0
5
10
15
20
0.001 0.01 0.1 1 10 100 1000
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
Ambient (Note E)
Power (W)
0.01
0.1
1
10
0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance
ZθJA Normalized Transient
Thermal Resistance
T
o
nT
P
D
D=Ton/(Ton+Toff)
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=90°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
0.1
1.0
10.0
100.0
0.1 1 10 100
-VDS (Volts)
-ID (Amps)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
100
µ
s
10ms
1ms
0.1s
1s
1
0s
DC
RDS(ON)
limited
10µs
TJ(Max)=150°C
TA=25°C
VDS=-10V
ID=-3A
Single Pulse
TJ(Max)=150°C
TA=25°C
Alpha & Omega Semiconductor, Ltd.
SYMBOLS
NOTE:
1. LEAD FINISH: 150 MICROINCHES ( 3.8 um) MIN.
THICKNESS OF Tin/Lead (SOLDER) PLATED ON LEAD
2. TOLERANCE ±0.10 mm (4 mil) UNLESS OTHERWISE
SPECIFIED
3. COPLANARITY : 0.10 mm
4. DIMENSION L IS MEASURED IN GAGE PLANE
θ
0.500.40b0.35
5°8°θ1 1°
0.95 BSC
E1 1.40
−−−
E
L
e
2.60
0.40
D
C2.80
0.10
1.80
−−−
1.60
2.80
−−−
2.95
0.60
2.90
0.15 3.04
0.25
DIMENSIONS IN MILLIMETERS
MIN
A1
A2
A0.00
1.00
1.00
MAXNOM
−−−
1.10 0.10
1.15
1.25−−−
SEATING PLANE
GAUGE PLANE
e1 −−− 1.90 BSC −−−
SOT-23 Package Data
RECOMMENDATION OF LAND PATTERN
P N D L N
NOTE:
P N - PART NUMBER CODE.
D - YAER AND WEEK CODE.
L N - ASSEMBLY LOT CODE, FAB AND
ASSEMBLY LOCATION CODE.
CODE
AO3411 AB
PART NO.
SOT-23 PART NO. CODE
PACKAGE MARKING DESCRIPTION
Rev. A
SOT-23 Tape and Reel Data
SOT-23 Carrier Tape
SOT-23 Reel
SOT-23 Tape
Leader / Trailer
& Orientation
ALPHA & OMEGA
SEMICONDUCTOR, INC.
