TC75S56F/FU/FE TOSHIBA CMOS Linear Integrated Circuit Silicon Monolithic TC75S56F,TC75S56FU,TC75S56FE Single Comparator The TC75S56F/TC75S56FU/TC75S56FE is a CMOS generalpurpose single comparator. The device can operate off a single power supply and draws a lower supply current than a conventional bipolar general-purpose comparator. This device's push-pull output stage can be directly connected to TTL or CMOS logic ICs, among others. TC75S56F Features * Low-current power supply * Single power supply operation * Wide common mode input voltage range : VSS~VDD - 0.9 V * Push-pull output circuit * Low input bias current * Small package : IDD = 10 A (typ.) TC75S56FU TC75S56FE Weight SSOP5-P-0.95 : 0.014 g (typ.) SSOP5-P-0.65A : 0.006 g (typ.) SON5-P-0.50 : 0.003 g (typ.) Marking (top view) 5 Pin Connection (top view) 4 VDD OUT 5 4 TC 1 2 1 IN (-) 3 1 2 VSS 3 IN (+) 2007-11-01 TC75S56F/FU/FE Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating Unit VDD, VSS 3.5 or 7 V DVIN 7 V Input voltage VIN VSS~VDD V Output Current IOUT 35 mA Supply voltage Differential input voltage Power dissipation TC75S56F/FU TC75S56FE 200 PD 100 mW Operating temperature Topr -40~85 C Storage temperature Tstg -55~125 C Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings and the operating ranges. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note: This device's CMOS structure makes it prone to latch-up. To prevent latch-up, please take the following precautions: * Ensure that no I/O pin's voltage level ever exceeds VDD or drops below VSS. In addition, check the power-on timing. * Do not subject the device to excessive noise. 2 2007-11-01 TC75S56F/FU/FE Electrical Characteristics (unless otherwise specified, VDD = 5 V, VSS = GND, Ta = 25C) Symbol Test Circuit Test Condition Min Typ. Max Unit Input offset voltage VIO 1 7 mV Input offset current IIO 1 pA II 1 pA Characteristics Input bias current Common mode input voltage CMVIN 0 4.1 V Supply current IDD (Note) 11 22 A 94 dB Voltage gain GV Sink current Isink VOL = 0.5 V 13 25 mA Isource VOH = 4.5 V 9 21 mA VOL Isink = 5.0 mA 0.1 0.3 VOH Isource = 5.0 mA 4.7 4.9 VDD 1.8 7.0 tPLH (1) Over drive = 100 mV 680 tPLH (2) TTL step input 500 tPHL (1) Over drive = 100 mV 250 tPHL (2) TTL step input 380 tTLH Over drive = 100 mV 60 tTHL Over drive = 100 mV 8 Source current Output voltage Operating supply voltage Propagation delay time (turn on) Propagation delay time (turn off) Response time V V ns ns ns Electrical Characteristics (unless otherwise specified, VDD = 3 V, VSS = GND, Ta = 25C) Symbol Test Circuit Test Condition Min Typ. Max Unit Input offset voltage VIO 1 7 mV Input offset current IIO 1 pA II 1 pA Common mode input voltage CMVIN 0 2.1 V Supply current IDD (Note) 10 20 A Characteristics Input bias current Isink VOL = 0.5 V 6 18 mA Isource VOH = 2.5 V 3 15 mA VOL Isink = 5.0 mA 0.15 0.35 VOH Isource = 5.0 mA 2.65 2.85 Propagation delay time (turn on) tPLH Over drive = 100 mV 550 ns Propagation delay time (turn off) tPHL Over drive = 100 mV 250 ns tTLH Over drive = 100 mV 30 tTHL Over drive = 100 mV 8 Sink current Source current Output voltage Response time V ns Note: This device's current consumption increases as its operating frequency increases. Note that the power dissipation should not exceed the allowable power dissipation. 3 2007-11-01 TC75S56F/FU/FE IDD - f 1000 VDD = 3 V VSS = GND Supply current IDD (A) Ta = 25C 100 10 1 0.001 0.01 0.1 1 Frequency f 10 100 1000 10 100 1000 (kHz) IDD - f 1000 VDD = 5 V VSS = GND Supply current IDD (A) Ta = 25C 100 10 1 0.001 0.01 0.1 1 Frequency f 4 (kHz) 2007-11-01 TC75S56F/FU/FE VOL - Isink VOL - Isink 3.0 5.0 VDD = 3 V 2.5 4.0 (V) Ta = 25C (V) 2.0 Output voltage VOL Output voltage VOL 4.5 VSS = GND 1.5 1.0 0.5 VDD = 5 V VSS = GND Ta = 25C 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0.0 0 5 10 15 20 25 Sink current Isink 30 35 0.0 0 40 5 (mA) 10 15 20 25 Sink current Isink 30 35 40 35 40 (mA) VOH - Isource VOH - Isource 5.0 3.0 4.5 2.5 (V) 2.0 Output voltage VOH Output voltage VOH (V) 4.0 1.5 1.0 VDD = 3 V 0.5 0.0 0 3.5 3.0 2.5 2.0 1.5 VSS = GND 1.0 Ta = 25C 0.5 5 10 15 20 25 Source current Isource 30 35 0.0 0 40 VDD = 5 V VSS = GND Ta = 25C 5 10 15 20 25 Source current Isource (mA) 30 (mA) PD - Ta 300 Power dissipation PD (mW) This data was obtained from an unmounted standalone IC. If the IC is mounted on a PCB, its power dissipation will be greater. Note that, depending on the PCB's thermal characteristics, the curves may differ substantially from those shown. 200 100 0 -40 0 40 80 120 Ambient temperature Ta (C) 5 2007-11-01 TC75S56F/FU/FE Package Dimensions Weight: 0.014 g (typ.) 6 2007-11-01 TC75S56F/FU/FE Package Dimensions Weight: 0.006 g (typ.) 7 2007-11-01 TC75S56F/FU/FE Package Dimensions Weight: 0.003 g (typ.) 8 2007-11-01 TC75S56F/FU/FE RESTRICTIONS ON PRODUCT USE * Toshiba Corporation, and its subsidiaries and affiliates (collectively "TOSHIBA"), reserve the right to make changes to the information in this document, and related hardware, software and systems (collectively "Product") without notice. * This document and any information herein may not be reproduced without prior written permission from TOSHIBA. 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