H11AV1X, H11AV2X, H11AV3X H11AV1, H11AV2, H11AV3 OPTICALLY COUPLED ISOLATOR PHOTOTRANSISTOR OUTPUT Dimensions in mm APPROVALS z UL recognised, File No. E91231 Package System " GG " 'X' SPECIFICATION APPROVALS z z VDE 0884 in 3 available lead form : - STD - G form 2.54 7.0 6.0 1 2 6 5 3 4 1.2 - SMD approved to CECC 00802 Certified to EN60950 by Nemko - Certificate No. P01102464 7.62 6.62 7.62 4.0 3.0 13 Max 0.5 3.0 DESCRIPTION The H11AV series of optically coupled isolators consist of infrared light emitting diode and NPN silicon photo transistor in a standard 6 pin dual in line plastic package. FEATURES z Options :10mm lead spread - add G after part no. Surface mount - add SM after part no. Tape&reel - add SMT&R after part no. z High Isolation Voltage (5.3kVRMS ,7.5kVPK ) z High BVCEO (70V min) z All electrical parameters 100% tested z Custom electrical selections available APPLICATIONS z DC motor controllers z Industrial systems controllers z Measuring instruments z Signal transmission between systems of different potentials and impedances OPTION SM OPTION G SURFACE MOUNT 7.62 0.5 3.35 0.26 ABSOLUTEMAXIMUMRATINGS (25C unless otherwise specified) Storage Temperature -55C to + 150C Operating Temperature -55C to + 100C Lead Soldering Temperature (1/16 inch (1.6mm) from case for 10 secs) 260C INPUTDIODE Forward Current Reverse Voltage Power Dissipation 60mA 6V 105mW OUTPUT TRANSISTOR Collector-emitter Voltage BVCEO Collector-base Voltage BVCBO Emitter-collector Voltage BVECO Collector Current Power Dissipation 70V 70V 6V 50mA 160mW POWER DISSIPATION 0.6 0.1 10.46 9.86 1.25 0.75 0.26 Total Power Dissipation 200mW (derate linearly 2.67mW/C above 25C) 10.16 ISOCOM COMPONENTS 2004 LTD Unit 25B, Park View Road West, Park View Industrial Estate, Brenda Road Hartlepool, Cleveland, TS25 1UD Tel: (01429) 863609 Fax :(01429) 863581 17/7/08 DB92055 ELECTRICAL CHARACTERISTICS ( TA= 25C Unless otherwise noted ) PARAMETER Input MIN TYP MAX UNITS Forward Voltage (VF) 1.2 1.5 V IF = 10mA 10 A VR = 6V 70 V IC = 1mA 70 6 V V nA IC = 100A IE = 100A VCE = 10V 300 % % % 10mA IF , 10V VCE 10mA IF , 10V VCE 10mA IF , 10V VCE 0.4 V 20mA IF , 2mA IC VRMS VPK See note 1 See note 1 VIO = 500V (note 1) s s VCC = 5V , fig 1 IF= 10mA, RL = 75 Reverse Current (IR) Output Coupled Collector-emitter Breakdown (BVCEO) ( note 2 ) Collector-base Breakdown (BVCBO) Emitter-collector Breakdown (BVECO) Collector-emitter Dark Current (ICEO) 50 Current Transfer Ratio (CTR) H11AV1 H11AV2 H11AV3 100 50 20 Collector-emitter Saturation VoltageVCE(SAT) Input to Output Isolation Voltage VISO 5300 7500 Input-output Isolation Resistance RISO 5x1010 Rise Time, tr Fall Time, tf Note 1 Note 2 TEST CONDITION 2 2 Measured with input leads shorted together and output leads shorted together. Special Selections are available on request. Please consult the factory. VCC Input ton toff RL = 75 tr Output tf Output 10% 10% 90% 90% FIG 1 17/7/08 DB92055m-AAS/A3 Collector Power Dissipation vs. Ambient Temperature Collector Current vs. Collector-emitter Voltage 150 100 50 -30 0 25 50 75 100 15 20 10 10 IF = 5mA 0 2 4 6 8 Collector-emitter voltage VCE ( V ) Forward Current vs. Ambient Temperature Collector-emitter Saturation Voltage vs. Ambient Temperature 60 50 40 30 20 10 0 1.5 0.24 IF = 20mA IC = 2mA 0.20 0.16 0.12 0.08 0.04 0 Ambient temperature TA ( C ) Relative Current Transfer Ratio vs. Ambient Temperature Relative Current Transfer Ratio vs. Forward Current 25 50 75 100 125 IF = 10mA VCE = 10V 1.0 0.5 10 0.28 0 25 50 75 Ambient temperature TA ( C ) 0 Relative current transfer ratio -30 Collector-emitter saturation voltage VCE(SAT) (V) Ambient temperature TA ( C ) 70 Forward current IF (mA) 20 30 125 80 Relative current transfer ratio 50 30 40 0 0 -30 100 1.4 1.2 1.0 0.8 0.6 0.4 VCE = 10V TA = 25C 0.2 0 0 -30 17/7/08 TA = 25C 50 Collector current IC (mA) Collector power dissipation PC (mW) 200 0 25 50 75 Ambient temperature TA ( C ) 100 1 2 5 10 20 50 Forward current IF (mA) DB92055m-AAS/A3