V
RRM
= 50 V - 200 V
I
F(AV)
= 300 A
Features
• High Surge Capability Twin Tower Package
• Types from 50 V to 200 V V
RRM
• Not ESD Sensitive
Parameter Symbol MUR30005CT(R) MUR30010CT(R) Unit
Repetitive peak reverse voltage V
RRM
50 100 V
RMS reverse voltage V
RMS
35 70 V
MUR30005CT thru MUR30020CTR
Maximum ratings, at T
j
= 25 °C, unless otherwise specified ("R" devices have leads reversed)
Conditions MUR30020CT(R)
200
140
Silicon Super Fast
Recover
y
Diode
DC blocking voltage V
DC
50 100 V
Operating temperature T
j
-55 to 150 -55 to 150 °C
Storage temperature T
stg
-55 to 150 -55 to 150 °C
Parameter Symbol MUR30005CT(R) MUR30010CT(R) Unit
Average forward current (per
pkg) I
F(AV)
300 300 A
Peak forward surge current (per
leg) I
FSM
2750 2750 A
Maximum instantaneous forward
voltage (per leg) 1.0 1.0
25 25 μA
33 mA
Maximum reverse recovery time
(per leg) T
rr
100 100 nS
Thermal characteristics
Maximum thermal resistance,
junction - case (per leg) R
ΘJC
0.40 0.40 °C/W
T
C
= 125 °C 300
t
p
= 8.3 ms, half sine 2750
0.40
I
F
=0.5 A, I
R
=1.0 A,
I
RR
= 0.25 A
T
j
= 125 °C
V
100
3
T
j
= 25 °C
I
FM
= 150 A, T
j
= 25 °C
Conditions
200
Electrical characteristics, at Tj = 25 °C, unless otherwise specified
Maximum reverse current at
rated DC blocking voltage (per
leg)
I
R
V
F
MUR30020CT(R)
-55 to 150
-55 to 150
1.0
25
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1
MUR30005CT thru MUR30020CTR
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2
Package dimensions and terminal configuration
Product is marked with part number and terminal configuration.
MUR30005CT thru MUR30020CTR
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