1/3
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c 2011 ROHM Co., Ltd. All rights reserved. 2011.04 - Rev.C
Schottky barrier Diode
RB021VA90
Applications Dimensions (Unit : mm) Land size figure (Unit : mm)
General rectification
Features
1) Small power mold type
(TUMD2)
2) Low VF
3) High reliability
Structure
Silicon epitaxial planar Structure
Taping dimensions (Unit : mm)
Absolute maximum ratings (Ta=25C)
Electrical characteristic (Ta=25C)
ROHM : TUMD2
dot (year wee k factory) + day
1.3±0.05
0.8±0.05
2.5±0.2
1.9±0.1
0.6±0.2
0.1
0.17±0.1
0.05
1.1
2.0
0.8 0.5
TUMD2
4.0±0.1 2.0±0.05 φ1.55±0.1
0
1.43±0.05 4.0±0.1 φ1.0±0.2
0
2.75
3.5±0.05 1.75±0.1
8.0±0.2
0.25±0.05
0.9±0.08
2.8±0.05
Symbol Min. Typ. Max. Unit
VF- - 0.49 V IF=200mA
IR- - 900 μAVR=90V
ConditionsParameter
Forward voltage
Reverse current
Symbol Unit
VRM V
VRV
Io A
IFSM A
Tj ℃
Tstg ℃
Parameter
Reverse voltage (DC)
Average rectified forward current
Reverse voltage (repetitive peak) Limits
90
0.2
90
Forward current surge peak （60Hz・1cyc）5
Junction temperature
Storage temperature 125
40 to
125
2/3
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c 2011 ROHM Co., Ltd. All rights reserved. 2011.04 - Rev.C
Data Sheet RB021VA90
Electrical characteristic curves(Ta=25C)
0
5
10
15
20
25
30
AVE:6.40ns
Ta=25℃
IF=0.5A
IR=1A
Irr=0.25*IR
n=10pcs
10
100
1000
0.001 0.1 10 1000
Rth(j-a)
Rth(j-c)
1ms
IM=10mA IF=0.1A
300us
time
Mounted on epoxy board
FORWARD VOLTAGE：VF(mV)
VF-IF CHARACTERISTICS
FORWARD CURRENT:IF(mA)
REVERSE CURRENT:IR(uA)
REVERSE VOLTAGE：VR(V)
VR-IR CHARACTERISTICS
CAPACITANCE BETWEEN
TERMINALS:Ct(pF)
REVERSE VOLTAGE:VR(V)
VR-Ct CHARACTERISTICS
VF DISPERSION MAP
FORWARD VOLTAGE:VF(mV)
REVERSE CURRENT:IR(uA)
IR DISPERSION MAP
CAPACITANCE BETWEEN
TERMINALS:Ct(pF)
Ct DISPERSION MAP
IFSM DISRESION MAP
PEAK SURGE
FORWARD CURRENT:IFSM(A)
PEAK SURGE
FORWARD CURRENT:IFSM(A)
NUMBER OF CYCLES
IFSM-CYCLE CHARACTERISTICS
PEAK SURGE
FORWARD CURRENT:IFSM(A)
TIME:t(ms)
IFSM-t CHARACTERISTICS
TIME:t(s)
Rth-t CHARACTERISTICS
TRANSIENT
THAERMAL IMPEDANCE:Rth (℃/W)
FORWARD POWER
DISSIPATION:Pf(W)
AVERAGE RECTIFIED
FORWARD CURRENT：Io(A)
Io-Pf CHARACTERISTICS
trr DISPERSION MAP
REVERSE RECOVERY TIME:trr(ns)
1
10
100
1000
0 100 200 300 400 500 600
0.1
1
10
100
1000
10000
100000
0 102030405060708090
1
10
100
0102030
f=1MHz
420
430
440
450
460
470
AVE:442.8mV
Ta=25℃
IF=0.2A
n=30pcs
0
50
100
150
200
250
300
Ta=25℃
VR=90V
n=30pcs
AVE:28.68uA
Ct分布
60
61
62
63
64
65
66
67
68
69
70
AVE:64.35pF
Ta=25℃
f=1MHz
VR=0V
n=10pcs
0
5
10
15
20
25
30
8.3ms
Ifsm 1cyc
AVE:14.6A
0
5
10
15
20
25
30
1 10 100
8.3ms
Ifsm
1cyc
8.3ms
0
5
10
15
20
25
30
1 10 100
t
Ifsm
0
0.1
0.2
0.3
0 0.1 0.2 0.3 0.4 0.5
Ta=-25℃
Ta=125℃
Ta=75℃
Ta=25℃
Ta=-25℃
Ta=125℃
Ta=25℃
Ta=75℃
DC
D=1/2
Sin(θ＝180)
3/3
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○
c 2011 ROHM Co., Ltd. All rights reserved. 2011.04 - Rev.C
Data Sheet RB021VA90
0
1
2
3
0 20406080
REVERSE POWER
DISSIPATION:P
R
(W)
REVERSE VOLTAGE:V
R
(V)
V
R
-P
R
CHARACTERISTICS AMBIENT TEMPERATURE:Ta(℃)
Derati ng Cu rve"(I o-Ta)
AVERAGE RECTIFIED
FO RWA RD CURRENT: Io (A)
AVERAGE RECTIFIED
FO RWA RD CURRENT:Io(A)
CASE TEMPARATURE:Tc(℃)
Derati ng Cu rve"(I o-Tc)
Sin(θ＝180)
DC
D=1/2
0
0.1
0.2
0.3
0.4
0.5
0255075100125
0
0.1
0.2
0.3
0.4
0.5
0255075100125
Sin(θ=180)
DC
D=1/2
T Tj=125℃
D=t/T
tV
R
Io
V
R
=45V
0A
0V
Sin(θ＝180)
DC
D=1/2
TTj=125
℃
D=t/T
tVR
Io
V
R
=45V
0A
0V
R1120A
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© 2011 ROHM Co., Ltd. All rights reserved.
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