VS-SD800C..L Series www.vishay.com Vishay Semiconductors Standard Recovery Diodes, (Hockey PUK Version), 1200 A FEATURES * Wide current range * High voltage ratings up to 4500 V * High surge current capabilities * Diffused junction * Hockey PUK version * Case style DO-200AB (B-PUK) * Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 B-PUK (DO-200AB) TYPICAL APPLICATIONS * Converters PRIMARY CHARACTERISTICS * Power supplies IF(AV) 1200 A Package B-PUK (DO-200AB) Circuit configuration Single * Machine tool controls * High power drives * Medium traction applications MAJOR RATINGS AND CHARACTERISTICS PARAMETER TEST CONDITIONS IF(AV) Ths IF(RMS) Ths IFSM I2t VRRM SD800C..L UNITS 24 to 36 40 to 45 1180 1065 A 55 55 C 2280 2040 A 25 25 C 50 Hz 13 600 12 200 60 Hz 14 240 12 800 A 50 Hz 925 745 60 Hz 845 680 Range 2400 to 3600 4000 to 4500 V -40 to +150 -40 to +150 C TJ kA2s ELECTRICAL SPECIFICATIONS VOLTAGE RATINGS TYPE NUMBER VS-SD800C..L VOLTAGE CODE VRRM, MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE V VRSM, MAXIMUM NON-REPETITIVE PEAK REVERSE VOLTAGE V 24 2400 2500 30 3000 3100 36 3600 3700 40 4000 4100 45 4500 4600 IRRM MAXIMUM AT TJ = TJ MAXIMUM mA 50 Revision: 11-Jan-18 Document Number: 93553 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-SD800C..L Series www.vishay.com Vishay Semiconductors FORWARD CONDUCTION PARAMETER Maximum average forward current at heatsink temperature IF(AV) IF(RMS) Maximum RMS forward current IFSM t = 8.3 ms t = 10 ms t = 10 ms I2t Maximum I2t for fusing I2t 55 (85) t = 8.3 ms t = 10 ms t = 8.3 ms No voltage reapplied 50 % VRRM reapplied No voltage reapplied UNITS 40 to 45 1180 (550) 1065 (490) 25 C heatsink temperature double side cooled t = 8.3 ms Maximum I2t for fusing 24 to 36 180 conduction, half sine wave Double side (single side) cooled t = 10 ms Maximum peak, one-cycle forward, non-repetitive surge current SD800C..L TEST CONDITIONS SYMBOL Sinusoidal half wave, initial TJ = TJ maximum 50 % VRRM reapplied A 55 (85) 2280 2040 13 600 12 200 14 240 12 800 11 440 10 250 11 980 10 750 925 745 845 680 654 526 597 480 t = 0.1 to 10 ms, no voltage reapplied 9250 7450 Low level value of threshold voltage VF(TO)1 (16.7 % x x IF(AV) < I < x IF(AV)), TJ = TJ maximum 0.90 1.06 High level value of threshold voltage VF(TO)2 (I > x IF(AV)), TJ = TJ maximum 1.10 1.18 Low level value of forward slope resistance rf1 (16.7 % x x IF(AV) < I < x IF(AV)), TJ = TJ maximum 0.38 0.44 High level value of forward slope resistance rf2 (I > x IF(AV)), TJ = TJ maximum 0.34 0.41 Ipk = 2000 A, TJ = TJ maximum, tp = 10 ms sinusoidal wave 1.66 1.95 C A kA2s kA2s V m VFM Maximum forward voltage drop V THERMAL AND MECHANICAL SPECIFICATIONS SYMBO L PARAMETER Maximum junction operating temperature range TEST CONDITIONS VALUES TJ - 40 to +150 Maximum storage temperature range TStg - 55 to +200 Maximum thermal resistance, junction to heatsink RthJ-hs UNITS C DC operation single side cooled 0.073 DC operation double side cooled 0.031 Mounting force, 10 % Approximate weight Case style See dimensions - link at the end of datasheet K/W 14 700 (1500) N (kg) 255 g B-PUK (DO-200AB) RthJ-hs CONDUCTION CONDUCTION ANGLE SINUSOIDAL CONDUCTION SINGLE SIDE DOUBLE SIDE RECTANGULAR CONDUCTION SINGLE SIDE DOUBLE SIDE 180 0.009 0.009 0.006 0.006 120 0.011 0.011 0.011 0.011 90 0.014 0.014 0.015 0.015 60 0.020 0.020 0.021 0.021 30 0.036 0.036 0.036 0.036 TEST CONDITIONS UNITS TJ = TJ maximum K/W Note * The table above shows the increment of thermal resistance RthJ-hs when devices operate at different conduction angles than DC Revision: 11-Jan-18 Document Number: 93553 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-SD800C..L Series www.vishay.com Vishay Semiconductors SD800C..L Series (2400V to 3600V ) (Single Side Cooled) R thJ-hs (DC) = 0.073 K/W 140 130 120 110 100 C o nduc tio n A ng le 90 80 30 70 60 90 60 120 180 50 40 30 0 100 200 300 400 500 600 700 800 900 Maxim um Allowable Heatsin k T emperature (C) Maxim um Allowa ble Heatsink Tem pera ture (C) 150 150 140 130 120 110 100 90 80 70 60 50 40 30 20 10 SD800C..L Series (2400V to 3600V ) (Double Side Cooled) R th J-hs (D C) = 0.031 K/W C o nd uc tio n Ang le 30 0 C on duc tio n Perio d 90 30 0 2 00 400 60 0 1 8 0 DC 8 0 0 1 00 0 12 00 1 4 00 120 110 100 C o nduc tio n A ng le 90 80 30 70 90 0 400 800 90 180 1200 120 180 50 40 30 0 100 200 300 400 500 600 700 800 1600 Avera ge Forwa rd Curren t (A) Fig. 3 - Current Ratings Characteristics Fig. 5 - Current Ratings Characteristics M a x im u m A llo w a b le He a t sin k T e m p e r a tu re ( C ) Maxim um Allowable Heatsin k T emperature (C) C o nd uc tio n Ang le 120 60 60 Averag e Forw ard Current (A) SD800C..L Series (2400V to 3600V ) (Double Side Cooled) R th J-hs (D C) = 0.031 K/W 60 1600 SD800C..L Series (4000V to 4500V ) (Single Side Cooled ) R thJ-h s (DC) = 0.073 K/W 140 130 Fig. 2 - Current Ratings Characteristics 30 1200 150 A v e ra g e F o rw a rd C u rre n t (A ) 150 140 130 120 110 100 90 80 70 60 50 40 30 20 10 800 Fig. 4 - Current Ratings Characteristics Maximum Allowab le Heatsink Tem perature ( C) M a x im u m A llo w a b le H e a t sin k T e m p e ra t u re ( C ) S D 8 0 0 C ..L S e rie s (2 4 0 0 V to 3 6 0 0 V ) (S in g le Sid e C o o le d ) R th J- hs (D C ) = 0 .0 7 3 K/ W 120 400 180 Avera ge Forwa rd Curren t (A) Fig. 1 - Current Ratings Characteristics 6 0 90 120 Avera ge Forward Curren t (A) 150 140 130 120 110 100 90 80 70 60 50 40 30 20 60 150 140 130 120 110 100 90 80 70 60 50 40 30 20 SD 8 0 0 C ..L S e rie s (4 0 0 0 V t o 4 5 0 0 V ) (S in g le Sid e C o o le d ) R thJ-h s (D C ) = 0 .0 7 3 K / W C o nduc tio n Pe rio d 90 60 1 2 0 1 8 0 30 0 2 00 4 00 6 00 80 0 DC 1 00 0 1 20 0 A v e ra g e Fo rw a rd C u rre n t (A ) Fig. 6 - Current Ratings Characteristics Revision: 11-Jan-18 Document Number: 93553 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-SD800C..L Series Vishay Semiconductors 4500 150 140 130 120 110 100 90 80 70 60 50 40 30 20 SD800C..L Series (4000V to 4500V ) (Double Side Cooled) R thJ-h s (DC) = 0.031 K/W Co n duc tio n A ng le 30 0 200 400 60 600 90 120 180 Maximum Average Forw ard Power Loss (W ) Maximum Allowable Heatsink Tem perature (C) www.vishay.com 4000 DC 180 120 90 60 30 3500 3000 2500 2000 C o nd uct io n Perio d 1500 SD800C..L Series (2400V to 3600V) TJ = 150C 1000 500 0 0 800 1000 1200 1400 Averag e Forw ard Curren t (A) C o ndu ctio n Pe rio d 30 60 90 120 1 8 0 DC 40 0 80 0 12 0 0 1 60 0 2 00 0 180 120 90 60 30 3000 2500 C o ndu ct io n A ng le 1000 SD800C..L Series (4000V to 4500V ) TJ = 150C 500 0 0 2000 1500 C o ndu ctio n A ng le 1000 SD800C..L Series (2400V to 3600V ) TJ = 150C 0 0 200 400 600 800 1000 1200 1400 1600 Average Forw ard Current (A) Fig. 9 - Forward Power Loss Characteristics 200 400 600 800 1000 1200 1400 Fig. 11 - Forward Power Loss Characteristics Maximu m Average Forward Pow er Loss (W) M aximum Average Forward Power Loss ( W) RMS Lim it RMS Limit 1500 4500 500 2500 Average Forw ard Curren t (A) 3500 2500 2000 2000 2 40 0 Fig. 8 - Current Ratings Characteristics 180 120 90 60 30 1500 3500 A v e ra g e F o rw a rd C u rre n t (A ) 3000 1000 Fig. 10 - Forward Power Loss Characteristics Maxim um Average Forward Pow er Loss (W) M a x im u m A llo w a b le He a t sin k T e m p e ra t u re (C ) S D 8 0 0 C ..L Se rie s (4 0 0 0 V t o 4 5 0 0 V ) (D o u b le S id e C o o le d ) R thJ-hs ( D C ) = 0 .0 3 1 K/ W 0 500 Average Forward Current (A) Fig. 7 - Current Ratings Characteristics 15 0 14 0 13 0 12 0 11 0 10 0 90 80 70 60 50 40 30 20 RMS Lim it DC 180 120 90 60 30 4000 3500 3000 RMS Lim it 2500 2000 C o ndu c tio n Pe rio d 1500 SD800C..L Series (4000V to 4500V ) TJ = 150C 1000 500 0 0 400 800 1200 1600 2000 2400 Average Forward Curren t (A) Fig. 12 - Forward Power Loss Characteristics Revision: 11-Jan-18 Document Number: 93553 4 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-SD800C..L Series www.vishay.com Vishay Semiconductors 14000 1 40 0 0 P e ak H a lf Sin e W a v e F o rw a r d C u rre n t (A ) P e a k H a lf Sin e W a v e F o rw ar d C u rre n t (A ) A t A n y R a t e d Lo a d C o n d it io n A n d W ith 1 3 0 0 0 5 0 % R a t e d V R RM A p p lie d F o llo w in g Su rg e In it ia l TJ = 1 5 0 C 1 20 0 0 @ 6 0 H z 0 .0 0 8 3 s 1 10 0 0 @ 5 0 H z 0 .0 1 0 0 s 1 00 0 0 9 00 0 8 00 0 7 00 0 6 00 0 5 00 0 SD 8 0 0 C ..L Se rie s (2 4 0 0 V to 3 6 0 0 V ) 4 00 0 3 00 0 1 10 12000 10000 M a xim u m N o n R e p e t it iv e Su rg e C u rre n t V e rsu s P u lse T ra in D u ra t io n . In itia l TJ = 1 5 0 C N o V o lt a g e R e a pp lie d 5 0 % R a te d V RRM R e a p p lie d 8000 6000 4000 SD 8 0 0 C ..L Se rie s (4 0 0 0 V t o 4 5 0 0 V ) 2000 0.01 10 0 0.1 Fig. 13 - Maximum Non-Repetitive Surge Current Single and Double Side Cooled 10000 Ma ximum Non Repetitive Surge Current V ersus Pulse Train Dura tion . In itial TJ = 150 C No Voltage Reapplied 50% Rated V RR M Reapplied 14000 13000 12000 11000 TJ = 25C 10000 9000 8000 7000 6000 5000 SD800C..L Series (2400V to 3600V) 4000 3000 0 .0 1 0 .1 Fig. 16 - Maximum Non-Repetitive Surge Current Single and Double Side Cooled In stantaneous Forward Current ( A) Pea k Half Sine W ave Forward Curren t (A) 15000 TJ = 150C 1000 SD800C..L Series (2400V to 3600V ) 100 0.5 1 Pulse Train Duration (s) At Any Rated L oad Condition An d W ith 11000 50% Rated V RR M Applied Followin g Surge Initial TJ = 150C 10000 @ 60 Hz 0.0083 s @ 50 Hz 0.0100 s 9000 8000 7000 6000 5000 SD800C..L Series (4000V to 4500V ) 3000 10 1.5 2 2. 5 3 3.5 4 4.5 Fig. 17 - Forward Voltage Drop Characteristics 1 00 N um be r O f E qua l Am plitud e H alf Cy c le C urre nt P uls es (N ) Fig. 15 - Maximum Non-Repetitive Surge Current Single and Double Side Cooled 1 0 00 0 In sta n t a n e o us Fo rw a rd C u rre n t (A ) Peak Half Sine Wave Forward Curren t (A) 12000 1 1 In stantaneous Forward V oltage (V ) Fig. 14 - Maximum Non-Repetitive Surge Current Single and Double Side Cooled 4000 1 P u lse Tr a in D u ra t io n (s) N um b er O f E qua l A m plitude H alf C yc le C urren t Pulse s ( N) TJ = 2 5 C T J = 1 5 0C 10 0 0 SD 8 0 0 C ..L Se rie s (4 0 0 0 V to 4 5 0 0 V ) 100 0 .5 1 1. 5 2 2 .5 3 3. 5 4 4 .5 5 5 .5 In st a n t a n e o u s Fo rw a rd V o lta g e ( V ) Fig. 18 - Forward Voltage Drop Characteristics Revision: 11-Jan-18 Document Number: 93553 5 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-SD800C..L Series www.vishay.com Vishay Semiconductors 0 .1 T ra n sie n t T h e rm a l Im p e d a n c e Z thJ-hs ( K /W ) St e a d y St a te V a lue R thJ-hs = 0 .0 7 3 K/ W (Sin gle Sid e C o o le d ) R t hJ- hs = 0 .0 3 1 K/ W ( D o u b le Side C o o le d ) ( D C O p e ra tio n ) 0 .0 1 SD 8 0 0 C ..L Se rie s 0 .0 0 1 0 .0 0 1 0 .0 1 0 .1 1 10 1 00 Sq u ar e W a v e P ulse D ura t io n ( s) Fig. 19 - Thermal Impedance ZthJ-hs Characteristics ORDERING INFORMATION TABLE Device code VS- SD 80 0 C 45 1 2 3 4 5 6 L 1 - Vishay Semiconductors product 2 - Diode 3 - Essential part number 4 - 0 = standard recovery 5 - C = ceramic PUK 6 - Voltage code x 100 = VRRM (see Voltage Ratings table) 6 - L = PUK case B-PUK (DO-200AB) LINKS TO RELATED DOCUMENTS Dimensions www.vishay.com/doc?95246 Revision: 11-Jan-18 Document Number: 93553 6 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Outline Dimensions www.vishay.com Vishay Semiconductors B-PUK (DO-200AB) DIMENSIONS in millimeters (inches) 58.5 (2.30) DIA. MAX. 3.5 (0.14) DIA. NOM. x 1.8 (0.07) deep MIN. both ends 0.8 (0.03) both ends 34 (1.34) DIA. MAX. 2 places 25.4 (1) 26.9 (1.06) C A 53 (2.09) DIA. MAX. Note: A = Anode C = Cathode Quote between upper and lower pole pieces has to be considered after application of mounting force (see Thermal and Mechanical Specifications) Revision: 12-Jul-17 Document Number: 95246 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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