2SK3376MFV-C - Toshiba America Electronic Components, Inc.

2SK3376MFV

2007-11-01

TOSHIBA Field Effect Transistor Silicon N Channel Junction Type

2SK3376MFV

For ECM

• Application for Ultra-compact ECM

Absolute Maximum Ratings (Ta=25°C)

Characteristic Symbol Rating Unit

Gate-Drain voltage VGDO -20 V

Gate Current IG 10 mA

Drain power dissipation (Ta = 25°C) PD (Note 1) 150 mW

Junction Temperature Tj 125 °C

Storage temperature range Tstg −55~125 °C

Note: Using continuously under heavy loads (e.g. the application of high

temperature/current/voltage and the significant change in

temperature, etc.) may cause this product to decrease in the

reliability significantly even if the operating conditions (i.e. operating

temperature/current/voltage, etc.) are within the absolute maximum

ratings.

Please design the appropriate reliability upon reviewing the Toshiba

Semiconductor Reliability Handbook (“Handling

Precautions”/“Derating Concept and Methods”) and individual

reliability data (i.e. reliability test report and estimated failure rate,

etc).

Note 1: Mounted on FR4 board

IDSS CLASSIFICATION

A-Rank 80 to 200µA

B-Rank 170 to 300µA

C-Rank 270 to 480µA

BK-Rank 150 to 350µA

Marking Equivalent Circuit

Unit: mm

JEDEC -

JEITA -

TOSHIBA 2-1L1C

Weight: 1.5mg (typ.)

VESM

1.Drain

2.Source

3.Gate

IDSS Classification Symbol

- Rank

B :B - Rank , B

-Rank

Type Name

C :C - Rank

1.2±0.05

0.32±0.05

0.40.4

0.22±0.05

0.8±0.05

1.2±0.05

0.5±0.05

0.13±0.05

0.5mm

0.45mm

0.4mm

2SK3376MFV

2007-11-01

Electrical Characteristics (A-Rank IDSS Ta=25°C)

Characteristic Symbol Test Condition Min Typ. Max Unit

Drain Current IDSS V

DS = 2 V, VGS = 0 80 ⎯ 200 µA

Drain Current ID V

DD = 2 V, RL= 2kΩ,Cg = 3pF ⎯ ⎯ 240 µA

Gate-Source Cut-off Voltage VGS(OFF) V

DS = 2 V, ID = 1μA -0.1 ⎯ -0.8 V

Forward transfer admittance |Yfs| VDS = 2 V,VGS = 0V 0.7 1.4 ⎯ mS

Input capacitance Ciss V

DS = 2 V, VGS = 0, f = 1 MHz ⎯ 5.5 ⎯ pF

Voltage Gain Gv VDD = 2V, RL= 2kΩ,Cg = 3pF, f = 1kHz -13.5 ⎯ -9.0 dB

Delta Voltage Gain DGv(f) VDD = 2V, RL= 2kΩ,Cg = 3pF,f = 1kHz to 100Hz ⎯ ⎯ -2.0 dB

Delta Voltage Gain DGv(V) VDD = 2V to 1V, RL= 2kΩ,Cg = 3pF,f = 1kHz ⎯ ⎯ -4.0 dB

Noise Voltage VN VDD = 2V, RL= 1kΩ,Cg = 3pF,Gv=80dB,f=A-Curve

Filter

⎯ ⎯ 47

Electrical Characteristics (B-Rank IDSS Ta=25°C)

Characteristic Symbol Test Condition Min Typ. Max Unit

Drain Current IDSS V

DS = 2 V, VGS = 0 170 ⎯ 300 µA

Drain Current ID V

DD = 2 V, RL= 2kΩ,Cg = 3pF ⎯ ⎯ 340 µA

Gate-Source Cut-off Voltage VGS(OFF) V

DS = 2 V, ID = 1μA -0.15 ⎯ -1.0 V

Forward transfer admittance |Yfs| VDS = 2 V,VGS = 0V 0.7 1.4 ⎯ mS

Input capacitance Ciss V

DS = 2 V, VGS = 0, f = 1 MHz ⎯ 5.5 ⎯ pF

Voltage Gain Gv VDD = 2V, RL= 2kΩ,Cg = 3pF, f = 1kHz -11.5 ⎯ -8.0 dB

Delta Voltage Gain DGv(f) VDD = 2V, RL= 2kΩ,Cg = 3pF,f = 1kHz to 100Hz ⎯ ⎯ -2.0 dB

Delta Voltage Gain DGv(V) VDD = 2V to 1V, RL= 2kΩ,Cg = 3pF,f = 1kHz ⎯ ⎯ -7.0 dB

Noise Voltage VN VDD = 2V, RL= 1kΩ,Cg = 3pF,Gv=80dB,f=A-Curve

Filter

⎯ ⎯ 50

Electrical Characteristics (C-Rank IDSS Ta=25°C)

Characteristic Symbol Test Condition Min Typ. Max Unit

Drain Current IDSS V

DS = 2 V, VGS = 0 270 ⎯ 480 µA

Drain Current ID V

DD = 2 V, RL= 2kΩ,Cg = 3pF ⎯ ⎯ 520 µA

Gate-Source Cut-off Voltage VGS(OFF) V

DS = 2 V, ID = 1μA -0.2 ⎯ -1.2 V

Forward transfer admittance |Yfs| VDS = 2 V,VGS = 0V 0.7 1.4 ⎯ mS

Input capacitance Ciss V

DS = 2 V, VGS = 0, f = 1 MHz ⎯ 5.5 ⎯ pF

Voltage Gain Gv VDD = 2V, RL= 2kΩ,Cg = 3pF, f = 1kHz -10.5 ⎯ -6.75 dB

Delta Voltage Gain DGv(f) VDD = 2V, RL= 2kΩ,Cg = 3pF,f = 1kHz to 100Hz ⎯ ⎯ -2.0 dB

Delta Voltage Gain DGv(V) VDD = 2V to 1V, RL= 2kΩ,Cg = 3pF,f = 1kHz ⎯ ⎯ -20 dB

Noise Voltage VN VDD = 2V, RL= 1kΩ,Cg = 3pF,Gv=80dB,f=A-Curve

Filter

⎯ ⎯ 75

2SK3376MFV

2007-11-01

Electrical Characteristics (BK-Rank IDSS Ta=25°C)

Characteristic Symbol Test Condition Min Typ. Max Unit

Drain Current IDSS V

DS = 2 V, VGS = 0 150 ⎯ 350 µA

Drain Current ID V

DD = 2 V, RL= 2kΩ,Cg = 3pF ⎯ ⎯ 390 µA

Gate-Source Cut-off Voltage VGS(OFF) V

DS = 2 V, ID = 1μA -0.125 ⎯ -1.1 V

Forward transfer admittance |Yfs| VDS = 2 V,VGS = 0V 0.7 1.4 ⎯ mS

Input capacitance Ciss V

DS = 2 V, VGS = 0, f = 1 MHz ⎯ 5.5 ⎯ pF

Voltage Gain Gv VDD = 2V, RL= 2kΩ,Cg = 3pF, f = 1kHz -12.0 ⎯ -7.50 dB

Delta Voltage Gain DGv(f) VDD = 2V, RL= 2kΩ,Cg = 3pF,f = 1kHz to 100Hz ⎯ ⎯ -2.0 dB

Delta Voltage Gain DGv(V) VDD = 2V to 1V, RL= 2kΩ,Cg = 3pF,f = 1kHz ⎯ ⎯ -13.5 dB

Noise Voltage VN VDD = 2V, RL= 1kΩ,Cg = 3pF,Gv=80dB,f=A-Curve

Filter

⎯ ⎯ 65

2SK3376MFV

2007-11-01

600

-1.0 -0.8 -0.6 -0.2

300

100

200

400

500

600

300

100

200

2.0

400

500

1.0

IDSS=200μA

VGS = 0 V

– 0.05 V

+ 0.1 V

+ 0.05 V

– 0.1 V

IDSS=450μA

300μA

100μA

200μA

-0.4

VDS=2V

Common Source

Ta = 25 °C

ID – VDS

Drain Current ID (µA)

ID – VGS

Drain Current ID (µA)

Drain Current IDSS (µA)

DGv(V)– IDSS

Delta Voltage Gain DGv(V) (dB)

Drain Current IDSS (µA)

|Yfs| – IDSS

Forward transfer admittance

fs| (mS)

400 500

Gate-Source Cut-off Voltage

VGS(OFF) (V )

Drain Current IDSS (µA)

VGS(OFF) – IDSS

Voltage Gain Gv (dB)

Drain Current IDSS (µA)

Gv– IDSS

100 200 300 600

|Yfs|:VDS=2V

VGS=0V

IDSS: VDS=2V

VGS=0V

Common Source

Ta = 25 °C

400 500 0

-100

-200

-300

-400

100 200 300 600 400 500

VGS(OFF):VDS=2V

ID = 1μA

IDSS:VDS=2V

VGS=0V

Common Source

Ta = 25 °C

-500

– 5

– 3

– 1

– 2

– 4

100 200 300 600 400 500

Gv:VDD=2V

Cg=5pF

RL= 2.2kΩ,

f=1kHz

vin=100mV

IDSS: VDS=2V

VGS=0V

Common Source

Ta = 25°C 0

-1.0

-1.5

-2.5

-0.5

-2.0

-3.0

100 200 300 600 400 500

DGv:VDD=2V to 1.5V

Cg=5pF

RL= 2.2kΩ,

f=1kHz

vin=100mV

IDSS: VDS=2V

VGS=0V

Common Source

Ta = 25°C

Drain - Source voltage VGS (V) Gate - Source voltage VGS (V)

Common Source

Ta = 25 °C

2SK3376MFV

2007-11-01

Drain Current IDSS (µA)

VN – IDSS

Noise Voltage VN (mV)

Drain - Source voltage VDS (V)

Ciss – VDS

Input capacitance Ciss (pF)

1 1 10

VGS=0V

f=1kHz

Common Source

Ta = 25°C

0 100 200 300 600 400 500

Drain Current IDSS (µA)

THD– IDSS

Total Harmonic Distortion

THD (%)

0.5

1.0

1.5

2.0

100 200 300 600 400 500 0

THD:VDD=2V

Cg=5pF

RL= 2.2kΩ

f=1kHz

vin=50mV

IDSS: VDS=2V

VGS=0V

Common Source

Ta = 25°C

VN:VDD=2V

Cg=10pF

RL= 1kΩ

f=1kHz

80dB AMP

A-Curve Filter

IDSS: VDS=2V

VGS=0V

Common Source

Ta = 25°C

2SK3376MFV

2007-11-01

RESTRICTIONS ON PRODUCT USE 20070701-EN GENERAL

• The information contained herein is subject to change without notice.

• TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor

devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical

stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of

safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of

such TOSHIBA products could cause loss of human life, bodily injury or damage to property.

In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as

set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and

conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability

Handbook” etc.

• The TOSHIBA products listed in this document are intended for usage in general electronics applications

(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,

etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires

extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or

bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or

spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,

medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his

document shall be made at the customer’s own risk.

• The products described in this document shall not be used or embedded to any downstream products of which

manufacture, use and/or sale are prohibited under any applicable laws and regulations.

• The information contained herein is presented only as a guide for the applications of our products. No

responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which

may result from its use. No license is granted by implication or otherwise under any patents or other rights of

TOSHIBA or the third parties.

• Please contact your sales representative for product-by-product details in this document regarding RoHS

compatibility. Please use these products in this document in compliance with all applicable laws and regulations

that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses

occurring as a result of noncompliance with applicable laws and regulations.