Features
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High UV sensitivity: QE 75 % (λ=200 nm)
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Half pitch 78-lead DIP
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Element size: 3.175 × 0.3175 mm
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Entire active area: 3.175 × 25.6875 mm
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Element pitch: 0.3425 mm
Applications
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Spectrophotometers
PHOTODIODE
76-element Si photodiode array
High UV sensitivity photodiode array mounted in DIP
S3954
■ Absolute maximum ratings
Parameter Symbol Value Unit
Reverse voltage VR Max. 5 V
Operating temperature Topr -20 to +60 °C
Storage temperature Tstg -20 to +80 °C
■ Electrical and optical characteristics (Ta=25 °C)
Parameter Symbol Condition Min. Typ. Max. Unit
Spectral response range λ- 190 to 1100 - nm
Peak sensitivity wavelength λp-960 -nm
λ=200 nm -0.10-
λ=633 nm -0.43-
Photo sensitivity S λ=λp-0.58-
A/W
Dark current IDper 1 element
VR=10 mV -0.1 30 pA
Temperature coefficient of
dark current TCID - 1.12 - times/°C
Rise time tr VR=0 V, RL=1 kΩ
λ=655 nm -0.4 -µs
Terminal capacitance Ct per 1 element
VR=0 V, f=10 kHz - 150 - pF
Noise equivalent power NEP VR=0 V, λ=λp-7.0 × 10-16 -W/Hz1/2
1
76-element Si photodiode array
S3954
HAMAMATSU PHOTONICS K.K., Solid State Division
1126-1 Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558 Japan, Telephone: (81) 53-434-3311, Fax: (81) 53-434-5184, www.hamamatsu.com
U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218
Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 08152-3750, Fax: (49) 08152-2658
France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10
United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777
North Europe: Hamamatsu Photonics Norden AB: Smidesvägen 12, SE-171 41 Solna, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01
Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741
Information furnished by HAMAMATSU is believed to be reliable . However, no responsibility is assumed for possible inaccuracies or omissions.
Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. ©2006 Hamamatsu Photonics K.K.
3.175
0.3175 0.0250.025
0
WAVELENGTH (nm)
PHOTO SENSITIVITY (A/W)
190 400 600 800 1000 1200
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8 (Typ. Ta=25 ˚C)
QE=100 %
QE=50 %
10 fA
REVERSE VOLTAGE (V)
DARK CURRENT
0.01 0.1 1 10
100 fA
1 pA
10 pA
100 pA (Typ. Ta=25 ˚C)
10 pF
REVERSE VOLTAGE (V)
TERMINAL CAPACITANCE
0.01 0.1 1 10
100 pF
1 nF (Typ. Ta=25 ˚C)
P 1.27 × 38 = 48.26
CH 1
3.175
ACTIVE AREA
25.6875
50.8 ± 0.6
15.5 ± 0.3
404177
2
1
39
38
2.8 ± 0.3
1.27
0.46
CH 76
78
(4.5)
15.11 ± 0.25
PIN No.
15.24 ± 0.25*
1.48 ± 0.2
0.25
PHOTOSENSITIVE
SURFACE
Cat. No. KMPD1041E02
Aug. 2006 DN
■ Terminal capacitance vs. reverse voltage■ Spectral response
KMPDB0130EA KMPDB0131EA
■ Dark current vs. reverse voltage
KMPDB0132EA
■ Dimensional outline (unit: mm)
KMPDA0115EA
■ Details of elements (unit: mm)
KMPDA0116EA
■ Pin connection
Pin No. Element No. Pin No. Element No.
1KC 40KC
2 2 41 75
3 4 42 73
4 6 43 71
5 8 44 69
610 45 67
712 4665
814 47 63
916 4861
10 18 49 59
11 20 50 57
12 22 51 55
13 24 52 53
14 26 53 51
15 28 54 49
16 30 55 47
17 32 56 45
18 34 57 43
19 36 58 41
20 38 59 39
21 40 60 37
22 42 61 35
23 44 62 33
24 46 63 31
25 48 64 29
26 50 65 27
27 52 66 25
28 54 67 23
29 56 68 21
30 58 69 19
31 60 70 17
32 62 71 15
33 64 72 13
34 66 73 11
35 68 74 9
36 70 75 7
37 72 76 5
38 74 77 3
39 76 78 1
2
