© Semiconductor Components Industries, LLC, 2015
May, 2015 − Rev. 1 1Publication Order Number:
NTP8G202N/D
NTP8G202N
Power GaN Cascode
Transistor 600 V, 290 mW
Features
•Fast Switching
•Extremely Low Qrr
•Transphorm Inside
•These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS
Compliant
ABSOLUTE MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter Symbol NDD Unit
Drain−to−Source Voltage VDSS 600 V
Gate−to−Source Voltage VGS ±18 V
Continuous Drain
Current RqJC Steady
State TC = 25°CID9.0 A
TC = 100°C 6.0
Power Dissipation –
RqJC Steady
State TC = 25°C PD65 W
Pulsed Drain
Current tp = 10 msIDM 35 A
Operating Junction and Storage
Temperature TJ,
TSTG −55 to
+150 °C
Lead Temperature for Soldering Leads TL260 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be af fected.
THERMAL RESISTANCE
Parameter Symbol Value Unit
Junction−to−Case (Drain) RqJC 2.3 °C/W
Junction−to−Ambient Steady State RqJA 62 °C/W
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V(BR)DSS RDS(ON) TYP
600 V 290 mW @ 10 V
Device Package Shipping
ORDERING INFORMATION
NTP8G202NG TO−220
(Pb−Free) 50 Units / Rail
TO−220
CASE 221A−09
STYLE 10
123
4
MARKING DIAGRAM
& PIN ASSIGNMENT
A = Assembly Location
Y = Year
WW = Work Week
G = Pb−Free Package
NTP8G202NG
AYWW
1
Gate 3
Drain
4
Source
2
Source
N−Channel MOSFET
D (3)
S (2,4)
G (1)
NTP8G202N
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2
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Characteristic Symbol Test Conditions Min Typ Max Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage V(BR)DSS VGS =0V, I
D=1mA 600 V
Drain−to−Source Leakage Current IDSS VDS = 600 V, VGS =0V TJ=25°C 2.5 90 mA
TJ= 150°C 8.0
Gate−to−Source Leakage Current IGSS VGS =±18 V ±100 nA
ON CHARACTERISTICS (Note 1)
Gate Threshold Voltage VGS(TH) VDS =V
GS, ID= 500 mA1.6 2.1 2.6 V
Static Drain-to-Source On Resistance RDS(on) VGS =8V, I
D= 5.5 A 290 350 mW
DYNAMIC CHARACTERISTICS
Input Capacitance Ciss
VDS = 400 V, VGS = 0 V, f = 1 MHz
760 pF
Output Capacitance Coss 26
Reverse Transfer Capacitance Crss 3.5
Effective output capacitance, energy
related (Note 3) Co(er) VGS = 0 V, VDS = 0 to 480 V 36
Effective output capacitance, time
related (Note 4) Co(tr) ID = constant, VGS = 0 V,
VDS = 0 to 480 V 57
Total Gate Charge Qg
VDS = 100 V, ID= 5.5 A, VGS = 4.5 V
6.2 9.3 nC
Gate-to-Source Charge Qgs 2.1
Gate-to-Drain Charge Qgd 2.2
SWITCHING CHARACTERISTICS (Note 2)
Turn-on Delay T ime td(on)
VDD = 480 V, ID= 5.5 A,
VGS =10V, R
G = 2 W
6.2 ns
Rise Time tr4.5
Turn-off Delay Time td(off) 9.7
Fall Time tf5.0
SOURCE−DRAIN DIODE CHARACTERISTICS
Diode Forward Voltage VSD IS= 5.5 A, VGS =0V TJ=25°C 2.1 V
Reverse Recovery Time trr VGS =0V, V
DD = 480 V
IS= 5.5 A, di/dt= 1500 A/ms12 ns
Reverse Recovery Charge Qrr 29 nC
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
1. Pulse Width ≤300 ms, Duty Cycle ≤2%.
2. Switching characteristics are independent of operating junction temperatures.
3. Co(er) is a fixed capacitance that gives the same stored energy as Coss while VDS is rising from 0 to 80% V(BR)DSS
4. Co(tr) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% V(BR)DSS
NTP8G202N
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3
TYPICAL CHARACTERISTICS
Figure 1. Typical Output Characteristics Figure 2. Typical Output Characteristics
VDS (V)
6420
0
10
15
20
25
35
Figure 3. Typical Transfer Characteristics Figure 4. Normalized On−Resistance
VGS (V) TJ (°C)
108640
10
20
125 20010050250
0.0
1.5
2.5
3.0
Figure 5. Typical Capacitance Figure 6. Typical COSS Stored Eneergy
VDS (V)
1
10
IDS (A)IDS (A)
NORMALIZED RDS(on)
C (pF)
3 V
VGS = 8 V
TJ = 25°CID = 12 A,
VGS = 10 V
40
810
35
0
15
25
40
2.0
100
1000
75 150
TJ = 25°C
4 V
5 V
VDS (V)
6420
0
5
10
15
20
IDS (A)
3 V
VGS = 8 V
810
TJ = 175°C
4 V
3.5 V
1 V
VDS = 10 V
TJ = 175°C
2
0.5
1.0
175
VGS = 0 V
f = 1 MHz
CISS
COSS
CRSS
VDS (V)
5004002001000
0
3
5
6
EOSS (mJ)
4
300 600
1
2
5004002001000 300 600
30
5
3.5 V
1 V
30
5
NTP8G202N
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4
TYPICAL CHARACTERISTICS
Figure 7. Forward Characteristics of Rev.
Diode
VSD (V)
6420
0
5
10
15
20
25
IS (A)
IS = f(VSD)
30
81
TJ = 175°C
75°C
150°C
35
357
125°C
100°C
50°C
25°C
Figure 8. Safe Operating Area
VSD (V)
1001010.1
0.1
1
IdS (A)
100
0
TC = 25°C
10
5 ms
DC
1 ms
100 ms
10 ms
Figure 9. Safe Operating Area
VSD (V)
1001010.1
0.1
1
IdS (A)
1000
TC = 80°C
10
5 ms
DC
1 ms
100 ms
10 ms
Figure 10. Transient Thermal Resistance
VSD (V)
10.10.0010.00001
0
1.0
Zth (°C/W)
10
Single Pulse
0.5
0.010.0001
1.5
2.0
2.5
D = 10%
D = 20%
D = 50%
NTP8G202N
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5
Figure 11. Switching Time Test Circuit Figure 12. Switching Time Waveform
VDS
VGS
90%
10%
toff
tf
td(off)
tr
td(on)
ton
Figure 13. Test Circuit for Reverse Diode
Characteristics Figure 14. Diode Recovery Waveform
QFQS
i, V
IF
diF/dt
IRRM
VRRM
90% I RRM
10% I RRM
dirr/dt
t
tF
tS
trr
trr = tS + tF
Qrr = QS +Q
SiC Diode
NTP8G202N
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6
PACKAGE DIMENSIONS
TO−220
CASE 221A−09
ISSUE AH
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION Z DEFINES A ZONE WHERE ALL
BODY AND LEAD IRREGULARITIES ARE
ALLOWED.
DIM MIN MAX MIN MAX
MILLIMETERSINCHES
A0.570 0.620 14.48 15.75
B0.380 0.415 9.66 10.53
C0.160 0.190 4.07 4.83
D0.025 0.038 0.64 0.96
F0.142 0.161 3.61 4.09
G0.095 0.105 2.42 2.66
H0.110 0.161 2.80 4.10
J0.014 0.024 0.36 0.61
K0.500 0.562 12.70 14.27
L0.045 0.060 1.15 1.52
N0.190 0.210 4.83 5.33
Q0.100 0.120 2.54 3.04
R0.080 0.110 2.04 2.79
S0.045 0.055 1.15 1.39
T0.235 0.255 5.97 6.47
U0.000 0.050 0.00 1.27
V0.045 --- 1.15 ---
Z--- 0.080 --- 2.04
B
Q
H
Z
L
V
G
N
A
K
F
123
4
D
SEATING
PLANE
−T−
C
S
T
U
R
J
STYLE 10:
PIN 1. GATE
2. SOURCE
3. DRAIN
4. SOURCE
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