SPW32N50C3 - Infineon Technologies

2008-02-11Rev. 2.5 Page 1

SPW32N50C3

Cool MOS™ Power Transistor VDS @ Tjmax 560 V

RDS(on) 0.11 Ω

ID32 A

Feature

• New revolutionary high voltage technology

•Ultra low gate charge

• Periodic avalanche rated

• Extreme dv/dtrated

• Ultra low effective capacitances

• Improved transconductance

PG-TO247

Type Package Ordering Code

SPW32N50C3 PG-TO247 Q67040-S4613

Marking

32N50C3

Maximum Ratings

Parameter Symbol Value Unit

Continuous drain current

TC = 25 °C

TC = 100 °C

Pulsed drain current, t

limited by T

max ID

uls 96

Avalanche energy, single pulse

ID = 10 A, VDD = 50 V

EAS 1100 mJ

Avalanche energy, repetitive tAR limited by Tjmax1

)

ID = 20 A, VDD = 50 V

EAR 1

Avalanche current, repetitive t

limited by T

max I

20 A

Gate source voltage VGS ±20 V

Gate source voltage AC (f >1Hz) VGS ±30

Power dissipation, TC = 25°C Ptot 284 W

Operating and storage temperature T

,Tst

-55... +150 °C

Reverse diode dv/dt

dv/dt

V/ns

Please note the new package dimensions arccording to PCN 2009-134-A

http://store.iiic.cc/

Rev. 2.5 Page 2 2008-02-11

SPW32N50C3

Maximum Ratings

Parameter Symbol Value Unit

Drain Source voltage slope

VDS = 400 V, ID = 32 A, Tj = 125 °C

dv/dt50 V/ns

Thermal Characteristics

Parameter Symbol Values Unit

min. typ. max.

Thermal resistance, junction - case RthJC - - 0.44 K/W

Thermal resistance, junction - ambient, leaded RthJA - - 62

Soldering temperature, wavesoldering

1.6 mm (0.063 in.) from case for 10s

Tsold - - 260 °C

Electrical Characteristics, at Tj=25°C unless otherwise specified

Parameter Symbol Conditions Values Unit

min. typ. max.

Drain-source breakdown voltage V(BR)DSS VGS=0V, ID=0.25mA 500 - - V

Drain-Source avalanche

breakdown voltage

V(BR)DS VGS=0V, ID=20A - 600 -

Gate threshold voltage VGS

(

)

ID=1800µΑ,VGS=VD

2.1 3 3.9

Zero gate voltage drain current IDSS VDS=500V, VGS=0V,

Tj=25°C,

Tj=150°C

0.5

250

µA

Gate-source leakage current IGSS VGS=20V, VDS=0V - - 100 nA

Drain-source on-state resistance RDS(on) VGS=10V, ID=20A,

Tj=25°C

Tj=150°C

0.09

0.27

0.11

Ω

Gate input resistance RGf=1MHz, open Drain - 0.8 -

Please note the new package dimensions arccording to PCN 2009-134-A

http://store.iiic.cc/

Rev. 2.5 Page 3 2008-02-11

SPW32N50C3

Electrical Characteristics , at T

= 25 °C, unless otherwise specified

Parameter Symbol Conditions Values Unit

min. typ. max.

Transconductance gfs VDS≥2*ID*RDS(on)max,

ID=20A

- 30 - S

Input capacitance Ciss VGS=0V, VDS=25V,

f=1MHz

- 4200 - pF

Output capacitance Coss - 1700 -

Reverse transfer capacitance Crss - 90 -

Effective output capacitance,2)

energy related

Co(er) VGS=0V,

VDS=0V to 400V

- 181 - pF

Effective output capacitance,3)

time related

Co(tr) - 350 -

Turn-on delay time td(on) VDD=380V, VGS=0/10V,

ID=32A, RG=2.7Ω

- 20 - ns

Rise time tr- 30 -

Turn-off delay time td(off) - 100 -

Fall time tf- 10 -

Gate Charge Characteristics

Gate to source charge Qgs VDD=380V, ID=32A - 15 - nC

Gate to drain charge Qgd - 90 -

Gate charge total QgVDD=380V, ID=32A,

VGS=0 to 10V

- 170 -

Gate plateau voltage V(plateau) VDD=380V, ID=32A - 5 - V

1Repetitve avalanche causes additional power losses that can be calculated as PAV=EAR*f.

2Co(er) is a fixed capacitance that gives the same stored energy as Coss while VDS is rising from 0 to 80% VDSS.

3Co(tr) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS.

4ISD<=ID, di/dt<=200A/us, VDClink=400V, Vpeak<VBR, DSS, Tj<Tj,max.

Identical low-side and high-side switch.

Please note the new package dimensions arccording to PCN 2009-134-A

http://store.iiic.cc/

Rev. 2.5 Page 4 2008-02-11

SPW32N50C3

Electrical Characteristics, at Tj = 25 °C, unless otherwise specified

Parameter Symbol Conditions Values Unit

min. typ. max.

Inverse diode continuous

forward current

ISTC=25°C - - 32 A

Inverse diode direct current,

pulsed

ISM - - 96

Inverse diode forward voltage VSD VGS=0V, IF=IS- 1 1.2 V

Reverse recovery time trr VR=380V, IF=IS ,

diF/dt=100A/µs

- 500 - ns

Reverse recovery charge Qrr - 15 - µC

Peak reverse recovery current Irrm - 60 - A

Peak rate of fall of reverse

recovery current

dirr/dt - 1000 - A/µs

Typical Transient Thermal Characteristics

Symbol Value Unit Symbol Value Unit

typ. typ.

Thermal resistance

Rth1 0.004367 K/W

Rth2 0.008742

Rth3 0.017

Rth4 0.081

Rth5 0.103

Rth6 0.049

Thermal capacitance

Cth1 0.0006644 Ws/K

Cth2 0.002479

Cth3 0.00336

Cth4 0.009048

Cth5 0.017

Cth6 0.114

External Heatsink

TjTcase

Tamb

Cth1 Cth2

Rth1 Rth,n

Cth,n

Ptot (t)

Please note the new package dimensions arccording to PCN 2009-134-A

http://store.iiic.cc/

Rev. 2.5 Page 5 2008-02-11

SPW32N50C3

1 Power dissipation

Ptot = f(TC)

0 20 40 60 80 100 120 °C 160

120

160

200

240

320 SPW32N50C3

Ptot

2 Safe operating area

ID= f ( VDS )

parameter : D = 0 , TC=25°C

10 010 110 210 3

VDS

-2

-1

tp = 0.001 ms

tp = 0.01 ms

tp = 0.1 ms

tp = 1 ms

3 Transient thermal impedance

ZthJC = f(tp)

parameter: D=tp/T

10 -7 10 -6 10 -5 10 -4 10 -3 10 -1

-4

-3

-2

-1

K/W

ZthJC

D = 0.5

D = 0.2

D = 0.1

D = 0.05

D = 0.02

D = 0.01

single pulse

4 Typ. output characteristic

ID = f (VDS); Tj=25°C

parameter: tp= 10 µs, VGS

0 5 10 15 V25

VDS

100

140

Vgs = 4.5V

Vgs = 5V

Vgs = 5.5V

Vgs = 6V

Vgs = 7V

Vgs = 20V

Please note the new package dimensions arccording to PCN 2009-134-A

http://store.iiic.cc/

Rev. 2.5 Page 6 2008-02-11

SPW32N50C3

5 Typ. output characteristic

ID = f (VDS); Tj=150°C

parameter: tp= 10 µs, VGS

0 5 10 15 V25

VDS

Vgs = 4V

Vgs = 4.5V

Vgs = 5V

Vgs = 5.5V

Vgs = 6V

Vgs = 20V

6 Typ. drain-source on resistance

RDS(on)=f(ID)

parameter: Tj=150°C, VGS

0 10 20 30 40 50 60 ID80

0.2

0.4

0.6

0.8

1.2

1.4

1.6

Ω

RDS(on)

Vgs = 4V Vgs = 5.5V

Vgs = 4.5VVgs = 5V

Vgs = 2

7 Drain-source on-state resistance

RDS(on) = f(Tj)

parameter : ID = 20 A, VGS = 10 V

-60 -20 20 60 100 °C 180

0.05

0.1

0.15

0.2

0.25

0.3

0.35

0.4

0.45

0.5

0.55

Ω

0.65 SPW32N50C3

RDS(on)

typ

98%

8 Typ. transfer characteristics

ID= f ( VGS ); VDS≥ 2 x ID x RDS(on)max

parameter: tp = 10 µs

0 1 2 3 4 5 6 7 8 V10

VGS

100

120

160

Tj = 25°C

Tj =150°C

Please note the new package dimensions arccording to PCN 2009-134-A

http://store.iiic.cc/

Rev. 2.5 Page 7 2008-02-11

SPW32N50C3

9 Typ. gate charge

VGS =f (QGate)

parameter: ID = 32 A pulsed

0 40 80 120 160 200 nC 260

QGate

16 SPW32N50C3

VGS

0.2 VDS max

0.8 VDS max

10 Forward characteristics of body diode

IF = f (VSD)

parameter: T

, tp= 10 µs

0 0.4 0.8 1.2 1.6 2 2.4 V3

VSD

-1

SPW32N50C3

Tj = 25 °C typ

Tj = 25 °C (98%)

Tj = 150 °C typ

Tj = 150 °C (98%)

11 Avalanche SOA

IAR = f (tAR)

par.: Tj≤ 150 °C

10 -3 10 -2 10 -1 10 010 110 210 4

µs

tAR

IAR

Tj(START)=25°C

Tj(START)=125°C

12 Avalanche energy

EAS = f(Tj)

par.: ID = 10 A, VDD = 50 V

20 40 60 80 100 120 °C 160

0.2

0.4

0.6

0.8

1.2

EAS

Please note the new package dimensions arccording to PCN 2009-134-A

http://store.iiic.cc/

Rev. 2.5 Page 8 2008-02-11

SPW32N50C3

13 Drain-source breakdown voltage

V(BR)DSS = f(Tj)

-60 -20 20 60 100 °C 180

450

460

470

480

490

500

510

520

530

540

550

560

570

600

SPW32N50C3

V(BR)DSS

14 Avalanche power losses

PAR = f (f )

parameter: EAR=1mJ

10 410 510 6

200

400

600

1000

PAR

15 Typ. capacitances

C = f(VDS)

parameter: VGS=0V, f=1 MHz

0 100 200 300 V500

VDS

Ciss

Crss

Coss

16 Typ. Coss stored energy

Eoss=f(VDS)

0 100 200 300 V 500

VDS

µJ

Eoss

Please note the new package dimensions arccording to PCN 2009-134-A

http://store.iiic.cc/

Rev. 2.5 Page 9 2008-02-11

SPW32N50C3

Definition of diodes switching characteristics

Please note the new package dimensions arccording to PCN 2009-134-A

http://store.iiic.cc/

80211

Rev. 2.5 PDJH

63:31&

3G72

Please note the new package dimensions arccording to PCN 2009-134-A

http://store.iiic.cc/

Rev. 2.5 Page 11 2008-02-11

63:31&

Published by

Infineon Technologies AG

81726 Munich, Germany

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Please note the new package dimensions arccording to PCN 2009-134-A

http://store.iiic.cc/

Data sheet erratum

PCN 2009-134-A

New package outlines TO-247

Final Data Sheet Erratum Rev. 2.0, 2010-02-01

1New package outlines TO-247

Assembly capacity extension for CoolMOSTM technology products assembled in lead-free package

PG-TO247-3 at subcontractor ASE (Weihai) Inc., China (Changes are marked in blue.)

Figure 1 Outlines TO-247, dimensions in mm/inches

http://store.iiic.cc/