FIELD-EFFECT TRANSISTORS, SILICON. N CHANNEL *2N 4391 TRANSISTORS A EFFET DE CHAMP, SILICIUM. CANAL N * 2N 4392 *2N 4393 - High speed choppers Dcoupeurs rapides Maximum power dissipation Dissipation de puissance maximale P tot (w) 1,8 wth os aN N ok Preferred device Dispositif recommand 609 max. 2N 4392 300 max. 2N 4391 "DS on 1002 = = max. 2N 4393 ta(on) 15ns max. Case TO-18 See outline drawing CB-6 on last pages Boitier Voir dessin cot CB-6 dernires pages Bottom view Vue de dessous 63s D 0 . 3 Weight : 0,32 g. Gate is connected to case 50 100 150 200 Tease! c) Masse La grille est relie au boitier ABSOLUTE RATINGS (LIMITING VALUES) T =+25C (Unless otherwise stated) VALEURS LIMITES ABSOLUES D'UTILISATION amb (Sauf indications contraires) Drain-source voltage Tension drain-source Vos 40 v Gate-source voltage Vv Tension grille-source GS 40 v Gate-drain voitage Tension grille-drain Vg D 40 Vv Gate current Courant de grille 'g 50 mA Power dissipation T = 25C P 18 W Dissipation de puissance case tot Junction temperature T. Temprature de jonction max. j + 175 C Storage temperature min. T -65 c Temprature de stockage max. stg +200 C 75-46 1/7 af. THOMSON-CSF DRMSIOR SENACROUCTEURS SesQosem 8032N 4391, 2N 4392, 2N 4393 STATIC CHARACTERISTICS T. =25C (Unless otherwise stated) CARACTERISTIQUES STATIQUES amb (Saut indications contraires} Test conditions ; Conditions de mesure Min. Typ. Max. Vong = 0 DS | -0,1 nA Vgg = -20V GSS " Total gate leakage current Courant de fuite total de grille Vos =0 Vag = -20V Igss -0,2 HA Tamb = 150C Gate-source breakdown voltage Vos = 9 Vv _40 Vv Tension de claquage grille-source Ig =-1 uA (BR)GSS Vic = 20V DS I Ves = -12V DSx 2N 4391 0,1 nA ves - aa Ipsx _| 2N 4392 0,1 nA Ving = 20V Ves = -5V psx 2N 4393 01 nA Drain cut-off current Vos = 20V rain cut-off curren _ Courant rsiduel de drain Ves =-12V lpsx 2N 4391 0,2 HA amb = 150C Vos = 20V Ves = -7V losx 2N 4392 0,2 uA Tamb = 150C Vpg = 20V Veg = BV lpsx | 2N4393 0,2 HA Tamb= 150C Forward gate-source voltage Vps = 9 Ves 1 Vv Tension gritle-source en direct lg = 1mA 2N 4391! 50 150 mA Drain current Vong = 20V * Courant de drain yos =0 'pss 2N 4392; 25 7 mA GS 2N 4393 | 5 30 mA * Pulsed t.< 300 us impulsions p 6 <2% 2/7 8042N 4391, 2N 4392, 2N 4393 STATIC CHARACTERISTICS T =25C (Unless otherwise stated} CARACTERISTIQUES STATIQUES amb (Sauf indications contraires} Test conditions i Conditions de mesure Min. Typ. Max. 2N 4391 | 4 10 Vv Gate-source cut-off voltage Vos = 20V Tension grille-source de blocage HT Ds = 1nA Ves off 2N 4392 2 5 Vv D 2N 4393 | -0,5 -3 Vv Veco =0 ib = 12mA Vos sat 2N 4391 0,4 Vv . . Vee =0 Drain-source saturation voltage Gs Vv Tension de saturation drain-source Ip = 6mA DS sat 2N 4392 0,4 v Veco =90 o = 3mA Vos sat 2N 4393 0,4 v 0 drai . Vac =0 2N 4391 30 2 n-state drain-source resistance Gs Rsistance drain-source & l'tat passant { = 1mA "DS on 2N 4392 60 2 D 2N 4393 100 2 DYNAMIC CHARACTERISTICS (for small signals) CARACTERISTIQUES DYNAMIQUES (pour petits signaux} 0 Ves = 9 2N 4391 30 2 n-state drain-source resistance = Rsistance drain-source 4 tat passant i 0 "ds on -2N 4392 60 2 f = 1kHz 2N 4393 100 2 Ves = 0 Input capacitance f =1MHz Capacit dentre Vos =0 Cy 1ss 26 pF (Vpg = 20 V*) (14*) Vps = 9 Vgg = -12V C1055 2N 4391 4 pF f = 1MHz R . Vos = everse transfer capacitance Vac =-7V C1265 2N 4392 4 pF Capacit de transfert inverse GS f = 1 MHz Vine = DS Veg = -5V C1255 2N 4393 4 pF f = 1MHz * Indicates JEDEC registred data Valeurs dorigine JEDEC pour information 3/7 8052N 4391, 2N 4392, 2N 4393 SWITCHING CHARACTERISTICS CARACTERISTIQUES DE COMMUTATION Tamb = 25C {Unless otherwise stated} (Sauf indications contraires) Test conditions Conditions de mesure Min. Typ. Max. Turn-on delay time talon) 2N 4391 15 ns Retard a la croissance Rise time Temps de croissance Vp db = 10V t 2N 4391 5 ns | Ves on = 9 Vesx =-12V Turn-off delay time | =12mA Retard a la dcroissance Don td(off) 2N 4391 20 ns Fall time Temps de dcroissance t 2N 4391 15 ns Turn-on delay time Retard & fa croissance tdion) 2N 4392 15 ns Rise time Temps de croissance Vp Do 10V t 2N 4392 5 ns | Ves on = 9 Vesx =-7V Turn-off delay time ! =6mA Retard & fa dcroissance Don m td(off) 2N 4392 35 ns Fall time Temps de dcroissance te 2N 4392 20 ns Turn-on delay time Retard a la croissance Taion) 2N 4393 15 ns Rise time Temps de croissance Vop = 10V t 2N 4393 5 ns Ves on = 9 Vesx =-5V Turn-off delay time | me A Retard a la dcroissance Don 3m ta(off) 2N 4393 50 ns Fall time Temps de dcroissance te 2N 4393 30 ns 8062N 4391, 2N 4392, 2N 4393 SWITCHING TIMES TESTS CIRCUITS SCHEMAS DE MESURES DES TEMPS DE COMMUTATION RL 1 yF Generator | F722] Gnrateur v1 poe awe Oscilloscope Zo = 502 v4 Oscilloscope t, $0.5ns Z, =502 t, <O,5ns Q 1 S\ 1= t me 1 ys * ko s08 t $0.4 ns P = 10% g [le Ly | Q Vop 1 WF | I ] om Vs) vid wre 90 % -12V (2N 4391) Vesx ={- 7V (2N 4392) 50% - 5V_ (2N 4393) Vv 10% V'1 = _GSX 41 tt & v24 toft ton tdloff} te tdion) =~ Vop 12mA_ {(2N 4391) 10% Ip on} &mA_ (2N 4392) 3mA (2N 4393) 90 % ! x 252 ov 8/7 8072N 4391, 2N 4392, 2N 4393 STATIC CHARACTERISTICS CARACTERISTIQUES STATIQUES pss lpss mT TTT LEE Ty] aL logs 8 Vpg = 20 V. Veg =0 90 Ves off? Vpg =20V. Ip = 1 0A 80 tp = 300 us 62% Ln 70 2 | 60 1 102 50 YY 40 5 L y 30 Y 2N 4392 / 20 2 y 10 10! 0 2 4 6 B10 12 Veg ogg? -60 -20 20 60 100 1 tee) less (pA) a /\ 20, 40 60 80 100 120 1401, tec) 0 5 10 168 20 25 30 VesglV} 6/7 8082N 4391, 2N 4392, 2N 4393 DYNAMIC CHARACTERISTICS CARACTERISTIQUES DYNAMIQUES "ds on (2) Tig. on 1 KH2, Vipg=Vgg= 0 70 as off Vps = 20 V: Ip = 1A 60 50 40 30 20 10 0 0 2 4 6 B 10 12 ~Vgg og(V) Y "ds on 21 r (us) : Vos =20 (a) | _ | Ves = 80 yes = 5 f =1 kHz 4 PS = kHz YY TT 70 | Let 2 60 2N 4393 4 Sr [72 4392/7 104 50 LL a ey | A | 5 40 ra 7 La 30 Lio Te , cA Le Vine =2 l =i1ndA 20 10 f =1kHz 10 0 2 4 6 8 10 12 -Vgg o4s? -50 -25 0 25 50 75 100 Tamb C! VW? 809