BC183C NPN General Purpose Amplifer 1 TO-92 1. Collector 2. Base 3. Emitter Absolute Maximum Ratings Symbol TC=25C unless otherwise noted Parameter Value Units VCBO Collector-Base Voltage 45 V VCEO Collector-Emitter Voltage 30 V VEBO Emitter-Base Voltage 6 V IC Collector Current (DC) 100 mA PC Collector Dissipation (Ta=25C) 350 mW TSTG , TJ Storage Junction Temperature Range - 55 ~ 150 C Electrical Characteristics TC=25C unless otherwise noted Symbol Parameter Conditions Min. Max Units BVCBO Collector-Base Voltage IC = 10A 45 V BVCEO Collector-Emitter Voltage IC = 2mA 30 V BVEBO Emitter-Base Voltage IE = 100A 6 V ICBO Collector Cut-off Current VCB = 30V 15 nA IEBO Emitter Cut-off Current VEB = 4V 15 nA hFE DC Current Gain VCE = 5V, IC = 10A VCE = 5V, IC = 2.0mA VCE = 5V, IC = 100mA 40 120 80 800 VCE(sat) Collector-Emitter Saturation Voltage IC = 10mA, IB = 0.5mA IC = 100mA, IB = 5.0mA 0.25 0.6 V VBE(sat) Base-Emitter Saturation Voltage IC = 100mA, IB = 5mA 1.2 V VBE(on) Base-Emitter On Voltage VCE = 5V, IC = 2mA 0.7 V COB Output Capacitance VCE = 10V, f = 1.0MHz 5 pF fT Current gain Bandwidth Product VCE = 5V, IC = 10mA 150 hfe Small Signal Current Gain VCE = 5V, IC = 2mA f = 1KHz 450 NF Noise Figure VCE = 5V, IC = 200mA RG = 2K, f = 1KHz (c)2007 Fairchild Semiconductor Corporation BC183C Rev. A 1 0.55 MHz 900 10 dB www.fairchildsemi.com BC183C NPN General Purpose Amplifer June 2007 VCESAT - COLLECTOR-EMITTER VOLTAGE (V) h FE - TYPICAL PULSED CURRENT GAIN 1200 VCE = 5.0V 125 C 1000 800 600 25 C 400 - 40 C 200 0 0.01 0.03 0.1 0.3 1 3 10 30 I C - COLLECTOR CURRENT (mA) 100 0.3 0.25 125 C 0.15 VBEON- BASE-EMITTER ON VOLTAGE (V) VBESAT - COLLECTOR-EMITTER VOLTAGE (V) - 40 C 0.8 25 C 125C = 10 0.2 0.1 1 10 I C - COLLECTOR CURRENT (mA) 0.1 1 10 I C - COLLECTOR CURRENT (mA) 100 - 40 C 0.8 25 C 0.6 125C 0.4 V CE = 5.0 V 0.2 0.1 1 10 I C - COLLECTOR CURRENT (mA) 5 f = 1.0 MHz CAPACITANCE (pF) VCB = 45V 1 50 75 100 125 T A - AMBIE NT TEMP ERATURE ( C) 4 3 C 2 C ob 1 0 150 Figure 5. Collector-Cutoff Current vs Ambient Temperature 0 4 8 12 16 REVERSE BIAS VOLTAGE (V) 20 Figure 6. Input and Output Capacitance vs Reverse Bias Voltage 2 BC183C Rev. A 40 Figure 4. Base-Emitter ON Voltage vs Collector Current 10 0.1 25 100 1 Figure 3. Base-Emitter Saturation Voltage vs Collector Curent I CBO - COLLE CTOR CURRENT (nA) - 40 C 0.05 Figure 2. Collector-Emitter Saturation Voltage vs Collector Current 1 0.4 25 C 0.1 Figure 1. Typical Pulsed Current Gain vs Collector Current 0.6 = 10 0.2 www.fairchildsemi.com BC183C NPN General Purpose Amplifer Typical Characteristics FAIRCHILD SEMICONDUCTOR TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACExTM ActiveArrayTM BottomlessTM Build it NowTM CoolFETTM CROSSVOLTTM DOMETM EcoSPARKTM E2CMOSTM EnSignaTM FACT(R) FAST(R) FASTrTM FPSTM FRFETTM FACT Quiet SeriesTM GlobalOptoisolatorTM GTOTM HiSeCTM I2CTM i-LoTM ImpliedDisconnectTM IntelliMAXTM ISOPLANARTM LittleFETTM MICROCOUPLERTM MicroFETTM MicroPakTM MICROWIRETM MSXTM MSXProTM Across the board. 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THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD'S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. I23 3 BC183C Rev. A www.fairchildsemi.com BC183C NPN General Purpose Amplifer tm