SEMICONDUCTOR KTN2222U/AU TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. E FEATURES M B M *Low Leakage Current : ICEX=10nA(Max.) ; VCE=60V, VEB(OFF)=3V. D G J A 2 *Low Saturation Voltage 3 1 : VCE(sat)=0.3V(Max.) ; IC=150mA, IB=15mA. *Complementary to the KTN2907U/2907AU. L C P H N N K DIM A B C D E G H J K L M N P MILLIMETERS _ 0.20 2.00 + _ 0.15 1.25 + _ 0.10 0.90 + 0.3+0.10/-0.05 _ 0.20 2.10 + 0.65 0.15+0.1/-0.06 1.30 0.00~0.10 0.70 _ 0.10 0.42 + 0.10 MIN 0.1 MAX MAXIMUM RATING (Ta=25) 1. EMITTER RATING CHARACTERISTIC 2. BASE SYMBOL UNIT KTN2222U KTN2222AU Collector-Base Voltage VCBO 60 75 V Collector-Emitter Voltage VCEO 30 40 V Emitter-Base Voltage VEBO 5 6 V Collector Current Collector Power Dissipation (Ta=25) Junction Temperature Storage Temperature Range IC 600 mA PC 100 mW Tj 150 Tstg -55150 3. COLLECTOR USM Marking Lot No. Lot No. Type Name ZB Type Name KTN2222U ZG KTN2222AU MARK SPEC TYPE MARK KTN2222U Z B KTN2222AU Z G 2008. 8. 29 Revision No : 3 1/5 KTN2222U/AU ELECTRICAL CHARACTERISTICS (Ta=25) CHARACTERISTIC Collector Cut-off Current SYMBOL KTN2222AU MIN. TYP. MAX. UNIT VCE=60V, VEB(OFF)=3V - - 10 nA VCB=50V, IE=0 - - 0.01 VCB=60V, IE=0 - - 0.01 IEBO VEB=3V, IC=0 - - 10 60 - - V(BR)CBO IC=10A, IE=0 75 - - 30 - - 40 - - 5 - - 6 - - ICEX KTN2222U KTN2222AU Emitter Cut-off Current KTN2222AU Collector-Base KTN2222U Breakdown Voltage KTN2222AU * KTN2222U V(BR)CEO Breakdown Voltage KTN2222AU Emitter-Base KTN2222U Breakdown Voltage KTN2222AU DC Current Gain V(BR)EBO IE=10A, IC=0 hFE(1) IC=0.1mA, VCE=10V 35 - - KTN2222U hFE(2) IC=1mA, VCE=10V 50 - - KTN2222AU hFE(3) IC=10mA, VCE=10V 75 - - hFE(4) IC=150mA, VCE=10V 100 - 300 30 - - hFE(5) IC=500mA, VCE=10V 40 - - - - 0.4 KTN2222AU - - 0.3 KTN2222U - - 1.6 - - 1 - - 1.3 0.6 - 1.2 - - 2.6 - - 2.0 VCE=20V, IC=20mA, 250 - - f=100MHz 300 - - - - 8 - - 30 - - 25 KTN2222U VCE(sat)1 * Saturation Voltage V IC=150mA, IB=15mA V VCE(sat)2 IC=500mA, IB=50mA KTN2222AU KTN2222U VBE(sat)1 Saturation Voltage V * KTN2222AU Base-Emitter nA V IE=10mA, IB=0 KTN2222U Collector-Emitter A ICBO Collector Cut-off Current Collector-Emitter TEST CONDITION * IC=150mA, IB=15mA KTN2222AU V KTN2222U VBE(sat)2 IC=500mA, IB=50mA KTN2222AU KTN2222U fT Transition Frequency KTN2222AU Collector Output Capacitance Cob VCB=10V, IE=0, f=1.0MHz Cib VEB=0.5V, IC=0, f=1.0MHz KTN2222U Input Capacitance KTN2222AU MHz pF pF * Pulse Test : Pulse Width300S, Duty Cycle2%. 2008. 8. 29 Revision No : 3 2/5 KTN2222U/AU ELECTRICAL CHARACTERISTICS (Ta=25) CHARACTERISTIC Input Impedance Voltage Feedback Ratio Small-Singal Current Gain Collector Output Admittance KTN2222AU KTN2222AU KTN2222AU KTN2222AU SYMBOL TEST CONDITION MIN. TYP. MAX. IC=1mA, VCE=10V, f=1kHz 2 - 8 IC=10mA, VCE=10V, f=1kHz 0.25 - 1.25 IC=1mA, VCE=10V, f=1kHz - - 8 IC=10mA, VCE=10V, f=1kHz - - 4 IC=1mA, VCE=10V, f=1kHz 50 - 300 IC=10mA, VCE=10V, f=1kHz 75 - 375 IC=1mA, VCE=10V, f=1kHz 5 - 35 IC=10mA, VCE=10V, f=1kHz 25 - 200 - - 150 pS - - 4 dB hie UNIT k hre x10-4 hfe hoe Collector-Base Time Constant KTN2222AU Cc*rbb' Noise Figure KTN2222AU NF IE=20mA, VCB=20V, f=31.8MHz IC=100A, VCE=10V, Rg=1k, f=1kHz Delay Time td VCC=30V, VBE(OFF)=0.5V - - 10 Rise Time tr IC=150mA, IB1=15mA - - 25 Storage Time tstg VCC=30V, IC=150mA - - 225 Fall Time tf IB1=-IB2=15mA - - 60 Switching Time 2008. 8. 29 nS Revision No : 3 3/5 KTN2222U/AU 2008. 8. 29 Revision No : 3 4/5 KTN2222U/AU 2008. 8. 29 Revision No : 3 5/5