BSS64 HIGH VOLTAGE N-P-N TRANSISTORS Silicon planar epitaxial transistor in a microminiature plastic package intended for application in thick and thin-film circuits. This transistor is intended for high-voltage general purpose and switching applications. QUICK REFERENCE DATA Collector-base voltage (open emitter) Vcpo max. 120 V Collector-emitter voltage (open base) VcEQ max. 80 V Collector current (peak value) IcM max. 250 mA Total power dissipation up to Tamb = 25 OC Prot max. 250 mW Junction temperature qj max. 150 C a tO macy =1V;7)=25C h > 20 c= 1OmA; Voce = 1 VT) = FE typ. 80 Transition frequency at f = 100 MHz Ic=4mA; Vee = 10V fT > 60 MHz Turn-off time ic = 15 MA; IBon = !Botf = 1mA toff < 1 us MECHANICAL DATA Dimensions in mm Marking code Fig. 1 SOT-23. BSS64 = AMp 3.0 Pinning: 2.8 1 = base 2 = emitter 3 = collector ~ [0.95] ~~ [A] [=]0.2@| A] 8] . ao b 14 2.5 4.2 max MBBO12 e 4 3 ne 0 _ 0.48 _ 4, fe ]0.1@) [A [8 } 7296885. 3 max Reverse pinning types are available on request. TOP VIEW September 1994 715BSS64 RATINGS Limiting values in accordance with the Absolute Maximum System (IEC 134) Collector-base voltage (open emitter) Ic = 100 uA VcBo Collector-emitter voltage (open base) Ic=4mA VCEO Emitter-base voltage (open collector) IE = 100 nA VEBO Collector current (d.c. or averaged over any 20 ms period) Ic Collector current (peak value) Icom Base current (peak value) IBM Total power dissipation up to Tamp = 25 OC Prot Storage temperature Tstg Junction temperature Tj THERMAL RESISTANCE From junction to ambient* Rth j-a CHARACTERISTICS Tj = 25 unless otherwise specified Collector cut-off current le = 0; Veg =90V IcBO le = 0; Vog = 90 V; Tj = 150 OC IcBo Emitter cut-off current Ic= 0; VeR=5V lEBO Saturation voltages Ic = 4 mA; tg = 400 uA VCEsat VBEsat Ic = 50mA; 1B =15mA VcEsat D.C. current gain lc=1mMA; Vce=1V NEE ic =10mA; VcE=1V hFE Ic = 20mMA; VcE=1V NEE * Mounted on an FR4 printed-circuit board 8 mm x 10 mm x 0.7 mm. max. 120 max. 80 max. 5 max. 100 max. 250 max. 100 max. 250 65 to + 150 max. 150 = 500 < 100 < 50 typ. 0,5 < 200 < 150 < 1200 < 200 typ. 60 > 20 typ. 80 typ. 55 Vv Vv Vv mA mA mA mW oc K/W nA uA nA nA mV mV mV 716 September 1994High-voltage N-P-N transistors BSS64 Transition frequency at f = 100 MHz lc =4mA; VcE= 10 V Collector capacitance at f = 1 MHz le =le=0;VcR=10V Turn-off switching time ICon = 19 MA; IBon = lBoff = 1 MA typ. typ. 60 MHz 100 MHz 3 pF 1 us September 1994 717